KR100216261B1 - Aligning method for exposure - Google Patents
Aligning method for exposure Download PDFInfo
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- KR100216261B1 KR100216261B1 KR1019960051988A KR19960051988A KR100216261B1 KR 100216261 B1 KR100216261 B1 KR 100216261B1 KR 1019960051988 A KR1019960051988 A KR 1019960051988A KR 19960051988 A KR19960051988 A KR 19960051988A KR 100216261 B1 KR100216261 B1 KR 100216261B1
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- metal film
- alignment pattern
- alignment
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- semiconductor substrate
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
Abstract
본 발명은 반도체제조 공정시 노광시 정렬방법에 관한 것으로서 반도체기판 상의 칩영역을 한정하는 스크라이브영역 내의 정렬패턴 상부에 형성된 금속막에서 반사되는 빛을 검출하여 상기 반도체기판에 대해 노광마스크를 정렬하는 노광시 정렬 방법에 있어서, 상기 금속막을 형성하기 전에 상기 칩영역 내에서 상기 반도체기판과 상기 금속막을 절연시키기 위해 상기 반도체기판 상에 상기 스크라이브영역 내의 상기 정렬패턴을 덮도록 형성된 절연막을 상기 칩영역 내에만 잔류되어 상기 정렬패턴이 노출되도록 패터닝하므로써, 상기 금속막을 상기 정렬패턴과 접촉시켜 감광막 도포하고 레이저를 주사할 때 상기 금속막에서 반사되는 빛의 검출이 용이하도록 상기 금속막의 모서리를 날카롭게한다. 따라서, 정렬패턴이 혀성된 스크라이브영역 상의 절연막을 제거한 후 금속막을 형성하므로 이 금속막의 모서리가 날카롭게 형성되어 감광막 도포 후 레이저를 주사하여 스케닝할 때 반사되는 빛의 검출이 용이하여 정렬이 간단해진다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an alignment method during exposure during a semiconductor manufacturing process. In the time alignment method, an insulating film formed on the semiconductor substrate so as to cover the alignment pattern in the scribe area on the semiconductor substrate to insulate the semiconductor substrate from the metal film in the chip region before the metal film is formed. By patterning the alignment pattern to remain and expose the alignment pattern, the metal film is contacted with the alignment pattern to apply a photosensitive film and sharpen the edges of the metal film to facilitate detection of light reflected from the metal film when scanning the laser. Therefore, since the metal film is formed after removing the insulating film on the scribe area in which the alignment pattern is formed, the edges of the metal film are sharply formed, so that the reflected light is easily detected when scanning and scanning the laser after application of the photosensitive film, thereby simplifying the alignment.
Description
제1도(a)∼(b)는 종래 기술에 따른 노광시 정렬방법을 도시하는 공정도1 (a) to (b) are process charts showing the alignment method during exposure according to the prior art.
제2도(a)∼(c)는 본 발명에 따른 노광시 정렬방법을 도시하는 공정도2 (a) to 2 (c) are process drawings showing the alignment method at the time of exposure according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
21 : 반도체기판 23 : 정렬패턴21: semiconductor substrate 23: alignment pattern
25 : 절연막 27 : 제1감광막25 insulating film 27 first photosensitive film
29 : 금속막 31 : 제2감광막29 metal film 31 second photosensitive film
본 발명은 노광시 정렬방법에 관한 것으로서, 특히 정렬패턴을 레이저로 스캐닝(scaing) 할 때 반사되는 빛을 용이하게 검출하여 노광 마스크의 정렬을 용이하게 할 수 있는 노광시 정렬방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an alignment method during exposure, and more particularly, to an alignment method during exposure that can easily detect light reflected when scanning an alignment pattern with a laser to facilitate alignment of an exposure mask.
제1도(a)∼(b)는 종래 기술에 따른 노광시 정렬방법을 도시하는 공정도이다.1 (a) to (b) are process charts showing the alignment method at the time of exposure according to the prior art.
제1도(a)를 참조하면, 반도체기판(11) 상의 스크라이브영역(scribe layer) 내에 칩영역(도시되지 않음) 내의 필드산화막을 형성하는 필드산화 공정시 동시에 다수 개의 정렬패턴(13)을 형성한다. 그리고 스크라이브영역 상에 BPSG(Boro-Phospho Silicate Glass) 등을 중착하여 절연막(15)을 형성한다. 이 때, BPSG 등은 흐름성이 좋으므로 절연막(15)의 표면은 완만한 곡면을 이루게 된다.Referring to FIG. 1A, a plurality of alignment patterns 13 are simultaneously formed in a field oxidation process of forming a field oxide film in a chip region (not shown) in a scribe layer on a semiconductor substrate 11. do. An insulating film 15 is formed by depositing BPSG (Boro-Phospho Silicate Glass) or the like on the scribe region. At this time, since BPSG and the like have good flowability, the surface of the insulating film 15 forms a smooth curved surface.
제1도(b)를 참조하면, 절연막(15) 상에 칩 내에 도선을 형성하기 위한 알루미늄 등을 스퍼터링 등의 방법으로 중착하여 금속막(17)을 형성한다. 그리고, 칩영역 내에 도선을 형성하기 위해 금속막(17) 상에 패터닝할 때 마스크로 사용하는 감광막(19)을 도포한다. 그 다음, 감광막(19)을 노광하기 전 반도체기판(11)에 대해 노광마스크(도시되지 않음)를 정렬하기 위해 정렬패턴(13)이 형성된 스크라이브영역상에 He-Ne 레이저를 주사하여 스캐닝하고 반사되는 광을 검출하여 반도체기판(11)에 대해 노광마스크를 정렬한다. 이 때, 금속막(17)은 불투명하므로 주사되는 레이저가 정렬패턴(13)의 형태를 갖는 금속막(17)에 의해 반사되는 빛을 검출한다. 상기에서 He-Ne 레이저는 파장이 6328 로 감광막(19)을 노광할 때 사용하는 자외선의 파장과 다르므로 감광막(19)이 노광되지 않는다.Referring to FIG. 1B, the metal film 17 is formed by sputtering aluminum or the like for sputtering on the insulating film 15 by forming a conductive wire in the chip. Then, a photosensitive film 19 used as a mask is applied to the metal film 17 to form a conductive line in the chip region. Next, the He-Ne laser is scanned, scanned, and reflected on the scribe area where the alignment pattern 13 is formed to align the exposure mask (not shown) with respect to the semiconductor substrate 11 before exposing the photosensitive film 19. The exposure mask is detected to align the exposure mask with respect to the semiconductor substrate 11. At this time, since the metal film 17 is opaque, the laser to be scanned detects the light reflected by the metal film 17 having the form of the alignment pattern 13. Since the He-Ne laser has a wavelength of 6328 and is different from the wavelength of ultraviolet light used when exposing the photosensitive film 19, the photosensitive film 19 is not exposed.
그러나, 종래 기술은 금속막이 완만한 곡면을 이루은 절연막 상에 형성되므로 반도체기판에 대해 노광 마스크를 정렬할 때 반사되는 빛을 검출하기 어려운 문제점이 있었다.However, the prior art has a problem in that it is difficult to detect reflected light when the exposure mask is aligned with respect to the semiconductor substrate because the metal film is formed on the insulating film having a smooth curved surface.
따라서, 본 발명의 목적은 정렬시 반사되는 빛을 용이하게 검출하여 반도체기판에 대해 노광마스크의 정렬을 용이하게 할 수 있는 노광시 정렬방법을 제공함에 있다.Accordingly, it is an object of the present invention to provide an alignment method during exposure that can easily detect light reflected upon alignment to facilitate alignment of an exposure mask with respect to a semiconductor substrate.
상기 목적을 달성하기 위한 본 발명에 따른 노광시 정렬방법은 반도체기판 상의 칩영역을 한정하는 스크라이브영역 내의 정렬패턴 상부에 형성된 금속막에서 반사되는 빛을 검출하여 상기 반도체기판에 대해 노광마스크를 정렬하는 노광시 정렬방법에 있어서, 상기 금속막을 형성하기 전에 상기 칩영역 내에서 상기 반도체기판과 상기 금속막을 절연시키기 위해 상기 반도체기판 상에 상기 스크라이브영역 내의 상기 정렬패턴을 덮도록 형성된 절연막을 상기 칩영역 내에만 잔류되어 상기 정렬패턴이 노출되도록 패터닝하므로써, 상기 금속막을 상기 정렬패턴과 접촉시켜 감광막 도포하고 레이저를 주사할 때 상기 금속막에서 반사되는 빛의 검출이 용이하도록 상기 금속막의 모서리를 날카롭게 한다.The alignment method according to the present invention for achieving the above object is to align the exposure mask with respect to the semiconductor substrate by detecting the light reflected from the metal film formed on the alignment pattern in the scribe region defining the chip region on the semiconductor substrate In the exposure alignment method, an insulating film formed on the semiconductor substrate so as to cover the alignment pattern in the scribe region to insulate the semiconductor substrate from the metal film in the chip region before the metal film is formed. By only remaining and patterning the alignment pattern so that the alignment pattern is exposed, the metal film is contacted with the alignment pattern to apply a photosensitive film and sharpen the edge of the metal film to facilitate detection of light reflected from the metal film when scanning the laser.
이하, 첨부한 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제2도(a) 내지 (c)는 본 발명에 따른 노광시 정렬방법을 도시하는 공정도이다.2 (a) to (c) are process charts showing the alignment method at the time of exposure according to the present invention.
제2도(a)를 참조하면, 반도체기판(21) 상의 스크라이브영역 내에 칩영역(도시되지 않음) 내의 필드산화막을 형성하는 필드산화 공정시 동시에 다수 개의 정렬패턴(23)을 형성한다. 또한, 정렬패턴(23)을 필드산화막이 아닌 게이트전극을 형성하는 다결정실리콘으로 형성할 수도 있다. 그리고, 칩영역 내에 절연막을 형성하는 공정시 스크라이브영역 상에도 BPSG 등이 증착되어 절연막(25)을 형성한다. 이 때, BPSG 등은 흐름성이 좋으므로 절연막(25)의 표면은 평탄하게 된다.Referring to FIG. 2A, a plurality of alignment patterns 23 are simultaneously formed in a field oxidation process of forming a field oxide film in a chip region (not shown) in a scribe region on the semiconductor substrate 21. In addition, the alignment pattern 23 may be formed of polycrystalline silicon that forms a gate electrode instead of a field oxide film. During the process of forming the insulating film in the chip region, BPSG or the like is deposited on the scribe region to form the insulating film 25. At this time, since BPSG and the like have good flowability, the surface of the insulating film 25 is flat.
제2도(b)를 참조하면, 절연막(25) 상에 칩영역 내의 절연막을 식각할 때 마스크로 이용되는 제1감광막(27)을 도포한다. 그리고, 칩영역 내의 절연막을 노출시키는 감광막의 노광 및 현상 공정시 스크라이브영역의 절연막(25)상에 형성된 제1감광막(27)도 노광 및 현상시켜 이 절연막(25)을 노출시킨다.Referring to FIG. 2B, a first photosensitive film 27 used as a mask is etched on the insulating film 25 to etch the insulating film in the chip region. The first photosensitive film 27 formed on the insulating film 25 in the scribe area is also exposed and developed during the exposure and development of the photosensitive film exposing the insulating film in the chip region to expose the insulating film 25.
제2도(c)를 참조하면, 제1감광막(27)을 마스크로 사용하여 절연막(25)을 제거하여 정렬패턴(23)을 노출시킨다. 그리고, 제1감광막(27)을 제거한 후 도선을 형성하기 위한 알루미늄 등을 스퍼터링 등의 방법으로 증착하여 금속막(29)을 형성한다. 이 때, 금속막(29)이 정렬패턴(23) 상에 형성되므로 모서리가 날카롭게 된다.Referring to FIG. 2C, the alignment pattern 23 is exposed by removing the insulating layer 25 using the first photoresist layer 27 as a mask. After removing the first photosensitive film 27, aluminum or the like for forming the conductive wire is deposited by a method such as sputtering to form a metal film 29. At this time, since the metal film 29 is formed on the alignment pattern 23, the edges are sharpened.
그 다음, 침영역 내에 도선을 형성하기 위해 금속막(29) 상에 패터닝할 때 마스크로 사용하는 제1감광막(31)을 도포한다. 그리고, 제2감광막(31)을 노광하기 전 반도체기판(21)에 대해 노광마스크(도시되지 않음)를 정렬하기 위해 정렬패턴(23)이 형성된 스크라이브영역 상에 He-Ne 레이저를 주사하여 스캐닝하고 반사되는 광을 검출하여 반도체기판(21)에 대해 노광마스크를 정렬한다. 이 때, He-Ne 레이저는 파장이 6328 로 제2감광막(31)을 노광할 때 사용하는 WDHLTJS의 파장과 다르므로 제1감광막(31)이 노광되지 않는다. 상기에서 금속막(29)은 불투명하므로 주사되는 레이저가 정렬패턴(23)의 형태를 갖는 금속막(27)에 의해 반사되는 데 금속막(29)의 모서리가 날카로우므로 반사되는 빛의 검출이 용이하게 된다.Next, a first photosensitive film 31 is used as a mask when patterning on the metal film 29 to form a conductive wire in the needle region. In order to align the exposure mask (not shown) with respect to the semiconductor substrate 21 before exposing the second photoresist layer 31, a He-Ne laser is scanned and scanned on the scribe area where the alignment pattern 23 is formed. The exposure mask is detected to align the exposure mask with respect to the semiconductor substrate 21. At this time, since the He-Ne laser has a wavelength of 6328 and is different from the wavelength of WDHLTJS used when exposing the second photosensitive film 31, the first photosensitive film 31 is not exposed. Since the metal film 29 is opaque, the laser beam is reflected by the metal film 27 having the form of the alignment pattern 23. However, since the edges of the metal film 29 are sharp, detection of reflected light is difficult. It becomes easy.
따라서, 본 발명은 정렬패턴이 형성된 스크라이브영역 상의 절연막을 제거한 후 금속막을 형성하므로 이 금속막의 모서리가 날카롭게 형성되어 감광막 도포 후 레이저를 주사하여 스캐닝할 때 반사되는 빛의 검출이 용이하여 반도체기판에 대해 노광마스크의 정렬이 간단해지는 잇점이 있다.Therefore, since the metal film is formed after removing the insulating film on the scribe area on which the alignment pattern is formed, the edges of the metal film are sharply formed so that the reflected light can be easily detected when scanning the laser after scanning the photosensitive film. There is an advantage that the alignment of the exposure mask is simplified.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960051988A KR100216261B1 (en) | 1996-11-05 | 1996-11-05 | Aligning method for exposure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960051988A KR100216261B1 (en) | 1996-11-05 | 1996-11-05 | Aligning method for exposure |
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| Publication Number | Publication Date |
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| KR19980034047A KR19980034047A (en) | 1998-08-05 |
| KR100216261B1 true KR100216261B1 (en) | 1999-08-16 |
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| KR1019960051988A KR100216261B1 (en) | 1996-11-05 | 1996-11-05 | Aligning method for exposure |
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