KR100212409B1 - 수직 및 수평 절연 게이트, 전계 효과 트랜지스터 및 그 제조방법 - Google Patents
수직 및 수평 절연 게이트, 전계 효과 트랜지스터 및 그 제조방법 Download PDFInfo
- Publication number
- KR100212409B1 KR100212409B1 KR1019910020685A KR910020685A KR100212409B1 KR 100212409 B1 KR100212409 B1 KR 100212409B1 KR 1019910020685 A KR1019910020685 A KR 1019910020685A KR 910020685 A KR910020685 A KR 910020685A KR 100212409 B1 KR100212409 B1 KR 100212409B1
- Authority
- KR
- South Korea
- Prior art keywords
- region
- conductivity type
- tank
- gate
- channel
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US61785090A | 1990-11-21 | 1990-11-21 | |
US617,850 | 1990-11-21 | ||
US61835390A | 1990-11-23 | 1990-11-23 | |
US61827390A | 1990-11-23 | 1990-11-23 | |
US61827990A | 1990-11-23 | 1990-11-23 | |
US618,353 | 1990-11-23 | ||
US618,279 | 1990-11-23 | ||
US618,273 | 1990-11-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920010881A KR920010881A (ko) | 1992-06-27 |
KR100212409B1 true KR100212409B1 (ko) | 1999-08-02 |
Family
ID=27505142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910020685A KR100212409B1 (ko) | 1990-11-21 | 1991-11-20 | 수직 및 수평 절연 게이트, 전계 효과 트랜지스터 및 그 제조방법 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH06112416A (zh) |
KR (1) | KR100212409B1 (zh) |
TW (1) | TW230823B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100875801B1 (ko) * | 2005-12-30 | 2008-12-26 | 우 옵트로닉스 코포레이션 | 액정 디스플레이 장치의 바닥 기판을 제조하는 방법 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100487515B1 (ko) * | 1998-08-17 | 2005-07-07 | 삼성전자주식회사 | 이이피롬 장치의 제조 방법 |
US20150048875A1 (en) * | 2013-08-19 | 2015-02-19 | Ememory Technology Inc. | High voltage power control system |
-
1991
- 1991-11-20 KR KR1019910020685A patent/KR100212409B1/ko not_active IP Right Cessation
- 1991-11-21 JP JP3306372A patent/JPH06112416A/ja active Pending
-
1992
- 1992-07-14 TW TW081105560A patent/TW230823B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100875801B1 (ko) * | 2005-12-30 | 2008-12-26 | 우 옵트로닉스 코포레이션 | 액정 디스플레이 장치의 바닥 기판을 제조하는 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR920010881A (ko) | 1992-06-27 |
JPH06112416A (ja) | 1994-04-22 |
TW230823B (zh) | 1994-09-21 |
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Payment date: 20040412 Year of fee payment: 6 |
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