KR100211428B1 - High voltage control method of electron gun - Google Patents
High voltage control method of electron gun Download PDFInfo
- Publication number
- KR100211428B1 KR100211428B1 KR1019960019326A KR19960019326A KR100211428B1 KR 100211428 B1 KR100211428 B1 KR 100211428B1 KR 1019960019326 A KR1019960019326 A KR 1019960019326A KR 19960019326 A KR19960019326 A KR 19960019326A KR 100211428 B1 KR100211428 B1 KR 100211428B1
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- high voltage
- electron gun
- grid
- neck
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/38—Exhausting, degassing, filling, or cleaning vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2209/00—Apparatus and processes for manufacture of discharge tubes
- H01J2209/01—Generalised techniques
- H01J2209/017—Cleaning
Abstract
본 발명은 전자총의 고전압처리방법에 관한 것으로, 종래의 고전압부에 고전압을 인가하는 방법이 다른 전압부의 이물질 수리는 가능하지만 고전압부의 이물질이 수리되지 못하는 문제점을 해결하기 위하여, G5그리드(5)와 G6그리드(6)사이의 넥크외주에 그라운드된 도전체를 설치하고 중간 고전압부에 고전압을 인가하는 것이다.The present invention relates to a high-voltage processing method of an electron gun, and a method of applying a high voltage to a conventional high-voltage unit. However, in order to solve the problem that a foreign substance in a high-voltage unit can not be repaired, The grounded conductor is provided on the periphery of the neck between the G6 grids 6 and a high voltage is applied to the intermediate high voltage portion.
Description
제1도는 본 발명의 도전체가 설치된 전자총의 단면도.1 is a sectional view of an electron gun provided with a conductor according to the present invention;
* 도면의 주요부분에 대한 부호의 설명DESCRIPTION OF THE REFERENCE NUMERALS
1 : G1그리드 2 : G2그리드1: G1 Grid 2: G2 Grid
3 : G3그리드 4 : G4그리드3: G3 grid 4: G4 grid
5 : G5그리드 6 : G6그리드5: G5 grid 6: G6 grid
10 : 도전체10: Conductor
본 발명은 전자총의 고전압처리방법에 관한 것으로, 보다 상세하게는 음극선관 넥크부의 이물질을 크리닝(Cleaning)할 수 있는 고전압처리방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a high-voltage processing method for an electron gun, and more particularly, to a high-voltage processing method capable of cleaning a foreign substance in a cathode ray tube neck portion.
음극선관 제조공정에 있어서, 고전압(High-Voltage)공정은 전자총의 고전압측 전극과 저전압측 전극간에 고전압 펄스(pulse)를 인가하여 전자총 내부의 부유이물질 및 이온을 고전압전극에 가속, 충돌시켜 단시간에 큰 에너지에 의해 비산시킴으로써 전극간의 내압품위를 향상시키는 방법으로서, 종래에는 고전압부에 고전압펄스를 인가하여 다른 전극사이의 이물질을 제거하였으나, 고전압부의 넥크부 이물질이 수리(Cleaning)되지 못하는 문제점이 있어왔다.In the process of manufacturing a cathode ray tube, in a high-voltage process, a high voltage pulse is applied between a high-voltage side electrode and an low-voltage side electrode of an electron gun to accelerate and collide suspended foreign matter and ions in the electron gun with a high- Conventionally, a high voltage pulse is applied to a high voltage part to remove foreign substances between the other electrodes by scattering by a large energy, but there is a problem that a foreign matter of a neck part of a high voltage part can not be cleaned come.
본 발명은 상기한 문제점을 해결하기 위하여 창출된 것으로서 저전압부는 물론 고전압부의 이물질을 동시에 처리할 수 있는 전자총의 고전압처리방법의 제공을 그 목적으로 한다.SUMMARY OF THE INVENTION It is an object of the present invention to provide a high-voltage processing method for an electron gun capable of simultaneously processing a low-voltage part and a foreign matter of a high-voltage part.
상기한 목적을 달성하기 위하여, 본 발명은 G5그리드와 G6그리드 사이의 넥크외주에 그라운드된 도전체를 설치하고 중간 고전압부에 고전압을 인가하는 것을 특징으로 하는 전자총의 고전압처리방법이다.In order to achieve the above object, the present invention is a high voltage processing method for an electron gun, wherein a grounded conductor is provided on the periphery of a neck between a G5 grid and a G6 grid, and a high voltage is applied to the intermediate high voltage section.
이와 같이 구성되는 본 발명은 전자총의 고전압처리방법을 도면을 참조하여 구체적으로 설명한다.The present invention constructed as described above will be described in detail with reference to the drawings with reference to a method for processing a high voltage of an electron gun.
음극선관의 넥크부내에 저전압부인 G1그리드(1)와 G2그리드(2)가 설치되고, 그 위에 중간고전압부인 G3그리드(3), G4그리드(4) 및 G5그리드(5)가 위치하며 마지막으로 고전압이 인가되는 G6그리드(6)가 배치되어 있다.A G1 grid 1 and a G2 grid 2 which are low voltage parts are provided in the neck of a cathode ray tube and G3 grid 3, G4 grid 4 and G5 grid 5 which are intermediate high voltage parts are disposed thereon, And a G6 grid 6 to which a high voltage is applied.
그리고, G5그리드(6)와 G6그리드(6)사이의 네크외부에 넥크부 직경보다 약간 큰 내경을 갖는 도전체(10)가 그라운드되어 설치되어 있다.A conductor 10 having an inner diameter slightly larger than the diameter of the neck portion is provided on the outside of the neck between the G5 grid 6 and the G6 grid 6 in a grounded manner.
이와 같이 구성되는 본 발명의 전자총의 고전압처리방법은 중간고전압부인 G3, G4, G5그리드(3)(4)(5)로 된 중간고전압부사이에 스파크 갭(Spark Gap)이 발생되어 저전압부의 이물질이 제거되게 된다.According to the high-voltage processing method of the present invention configured as described above, a spark gap is generated between intermediate high-voltage auxiliary parts of G3, G4 and G5 grids 3, 4 and 5, which are intermediate high voltage parts, Removed.
또한, 고전압부의 넥크외주에 설치된 그라운드된 도전체에 의해 중간전압부와 고전압부사이에도 스파크갭이 발생되어 고전압부의 이물질도 처리되는 것이다.The spark gap is also generated between the intermediate voltage portion and the high voltage portion by the grounded conductor provided on the outer periphery of the neck of the high voltage portion so that the foreign matter of the high voltage portion is also treated.
특히, 그라운드된 도전체를 넥크외주에 설치하여 고전압부의 넥크부의 이물질이 중심적으로 처리된다.Particularly, a grounded conductor is disposed on the periphery of the neck, so that the foreign matter of the neck portion of the high-voltage portion is centrally processed.
이상에서 설명한 바와 같이, 본 발명은 고전압부의 넥크외주에 그라운드된 도전체를 설치하고 중간고전압부에 고전압을 인가함으로써, 저전압부와 고전압부 이물을 동시에 수리할 수 있는 장점이 있는 것이다.As described above, the present invention is advantageous in that a grounded conductor is provided on the outer periphery of the neck of the high-voltage portion and a high voltage is applied to the intermediate high-voltage portion so that the low-voltage portion and the high-voltage portion can be simultaneously repaired.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960019326A KR100211428B1 (en) | 1996-05-31 | 1996-05-31 | High voltage control method of electron gun |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960019326A KR100211428B1 (en) | 1996-05-31 | 1996-05-31 | High voltage control method of electron gun |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970076984A KR970076984A (en) | 1997-12-12 |
KR100211428B1 true KR100211428B1 (en) | 1999-08-02 |
Family
ID=19460496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960019326A KR100211428B1 (en) | 1996-05-31 | 1996-05-31 | High voltage control method of electron gun |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100211428B1 (en) |
-
1996
- 1996-05-31 KR KR1019960019326A patent/KR100211428B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR970076984A (en) | 1997-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1136693A (en) | Method for spot-knocking the electron-gun mount assembly of a crt | |
KR100211428B1 (en) | High voltage control method of electron gun | |
EP0349251B1 (en) | Method for spot-knocking an electron gun mount assembly of a CRT | |
EP0195485A2 (en) | High voltage processing of CRT mounts | |
US4682962A (en) | Method of manufacturing a cathode ray tube | |
JPH0395834A (en) | Withstand voltage treating method for cathode ray tube | |
US4883437A (en) | Method for spot-knocking an electron gun mount assembly of a crt utilizing a magnetic field | |
KR950008025Y1 (en) | High-voltagr circuit forbrown tube manufacture | |
KR100192450B1 (en) | Manufacturing method of crt | |
JPH01169840A (en) | Cathode-ray tube processing method for improvement of withstand voltage characteristic | |
JPS5749153A (en) | X-ray equipment | |
KR0177002B1 (en) | Method of prevention of damage in electronic gun | |
KR0166929B1 (en) | Improvement of inner potential of crt | |
JP2637115B2 (en) | Manufacturing method of cathode ray tube | |
JPH04315733A (en) | Manufacture of color cathode-ray tube | |
JPS63241836A (en) | Electrode knocking method for cathode-ray tube | |
KR200155654Y1 (en) | S-ring for cathode ray tube | |
JPH01225034A (en) | Manufacture of cathode-ray tube | |
JP2673049B2 (en) | Manufacturing method of cathode ray tube | |
JP2001035379A (en) | Withstand voltage processing method for cathode-ray tube | |
JPS5678044A (en) | Manufacturing method of cathode-ray tube | |
JPS5767261A (en) | Manufacturing method for cathode-ray tube | |
CN1145526A (en) | method of manufacturing color cathode ray tube | |
JPS5780635A (en) | High voltage processing method for cathode-ray tube | |
JPS6177232A (en) | Manufacture of cathode-ray tube |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20020426 Year of fee payment: 4 |
|
LAPS | Lapse due to unpaid annual fee |