KR100197520B1 - 다층구조의 롬셀 구조 및 제조방법 - Google Patents
다층구조의 롬셀 구조 및 제조방법 Download PDFInfo
- Publication number
- KR100197520B1 KR100197520B1 KR1019960033876A KR19960033876A KR100197520B1 KR 100197520 B1 KR100197520 B1 KR 100197520B1 KR 1019960033876 A KR1019960033876 A KR 1019960033876A KR 19960033876 A KR19960033876 A KR 19960033876A KR 100197520 B1 KR100197520 B1 KR 100197520B1
- Authority
- KR
- South Korea
- Prior art keywords
- conductive
- region
- oxide film
- poly
- gate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/38—Doping programmed, e.g. mask ROM
Landscapes
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960033876A KR100197520B1 (ko) | 1996-08-16 | 1996-08-16 | 다층구조의 롬셀 구조 및 제조방법 |
| JP9219605A JP2838702B2 (ja) | 1996-08-16 | 1997-08-14 | 電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960033876A KR100197520B1 (ko) | 1996-08-16 | 1996-08-16 | 다층구조의 롬셀 구조 및 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980014755A KR19980014755A (ko) | 1998-05-25 |
| KR100197520B1 true KR100197520B1 (ko) | 1999-06-15 |
Family
ID=19469693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960033876A KR100197520B1 (ko) | 1996-08-16 | 1996-08-16 | 다층구조의 롬셀 구조 및 제조방법 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2838702B2 (ja) |
| KR (1) | KR100197520B1 (ja) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3109537B2 (ja) * | 1991-07-12 | 2000-11-20 | 日本電気株式会社 | 読み出し専用半導体記憶装置 |
| JP3008999B2 (ja) * | 1991-08-30 | 2000-02-14 | 日本電気株式会社 | 読み出し専用半導体記憶装置 |
-
1996
- 1996-08-16 KR KR1019960033876A patent/KR100197520B1/ko not_active IP Right Cessation
-
1997
- 1997-08-14 JP JP9219605A patent/JP2838702B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980014755A (ko) | 1998-05-25 |
| JPH1084050A (ja) | 1998-03-31 |
| JP2838702B2 (ja) | 1998-12-16 |
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