KR0179176B1 - Wafer centering conviction apparatus of spinner - Google Patents
Wafer centering conviction apparatus of spinner Download PDFInfo
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- KR0179176B1 KR0179176B1 KR1019950026649A KR19950026649A KR0179176B1 KR 0179176 B1 KR0179176 B1 KR 0179176B1 KR 1019950026649 A KR1019950026649 A KR 1019950026649A KR 19950026649 A KR19950026649 A KR 19950026649A KR 0179176 B1 KR0179176 B1 KR 0179176B1
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- wafer
- vacuum chuck
- centering
- vacuum
- spinner
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
본 발명은 반도체소자 제조를 위한 포토공정시 웨이퍼에 감광막을 도포하기 위해 진공척에 웨이퍼를 로딩시킬 경우, 웨이퍼와 진공척과의 센터링이 정확이 수행되지 않으면 웨이퍼가 진공척에 흡착되지 않도록 하여 웨이퍼의 파손을 줄이는 한편 공정수율을 향상시킬 수 있도록 한 것이다. 이를 위해, 본 발명은 웨이퍼 가이드에 대한 웨이퍼(1)와 진공척(2)의 센터링이 정확히 수행되지 않았을 때, 진공척(2)에 로딩되는 웨이퍼(1)가 진공척(2)에 흡착되지 않도록 하는 웨이퍼 센터링 확인용 치구(3)가 모터플렌지(4)에 장착되어 웨이퍼(1)의 센터링 여부를 검출할 수 있도록 한 반도체 소자 제조공정용 스피너의 웨이퍼 센터링 확인장치이다.According to the present invention, when a wafer is loaded on a vacuum chuck to apply a photoresist film to the wafer during a photo process for manufacturing a semiconductor device, the wafer is not adsorbed on the vacuum chuck unless the centering of the wafer and the vacuum chuck is performed correctly. This is to reduce the breakage and improve the process yield. To this end, in the present invention, when the centering of the wafer 1 and the vacuum chuck 2 with respect to the wafer guide is not performed correctly, the wafer 1 loaded on the vacuum chuck 2 is not adsorbed to the vacuum chuck 2. The wafer centering check device of the spinner for a semiconductor device manufacturing process is mounted on the motor flange 4 so that the wafer centering check jig 3 can be detected.
Description
제1도는 종래의 스피너에 캐치컵이 결합되는 상태를 나타낸 분해사시도.1 is an exploded perspective view showing a state in which the catch cup is coupled to a conventional spinner.
제2도는 본 발명에 따른 스피너에 캐치컵이 결합되는 상태를 나타낸 분해사시도.Figure 2 is an exploded perspective view showing a state that the catch cup is coupled to the spinner according to the present invention.
제3도는 본 발명의 작동상태를 나타낸 요부 종단면도로서,Figure 3 is a longitudinal cross-sectional view showing the main portion of the operating state of the present invention,
(a)는 웨이퍼와 진공적의 센터링이 정확히 이루어졌을 때의 상태도.(a) is a state diagram when the wafer and the vacuum centering are performed correctly.
(b)는 웨이퍼와 진공척의 센터링이 맞지 않았을 때의 상태도.(b) is a state diagram when the wafer is not centered with the vacuum chuck.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 웨이퍼 2 : 진공척1 wafer 2 vacuum chuck
3 : 웨이퍼 센터링 확인용 치구 4 : 모터플랜지3: jig for checking wafer centering 4: motor flange
5 : 경사면5: slope
본 발명은 반도체소자 제조공정용 스피너(Spinner)의 웨이퍼 센터링 확인 장치에 관한 것으로서, 더욱 상세하게는 반도체소자 제조를 위한 포토공정시 웨이퍼와 웨이퍼 고정척의 중심이 일치하지 않을 경우 웨이퍼가 진공척에 흡착되지 않도록 함과 동시에 이를 손쉽게 확인할 수 있도록 한 것이다. 종래에는 반도체 제제용 포토공정을 위해 웨이퍼에 감광액을 도포하고자 하는 경우, 제1도에 나타낸 바와 같이 웨이퍼 흡착용 진공척(2) 상면에 웨이퍼(도시는 생략함)가 로딩된 상태에서 진공척(2)이 고속회전할 때 웨이퍼 상면에 감광액이 분사되므로써 웨이퍼 상면에 감광막이 도포된다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for checking wafer centering of a spinner for a semiconductor device manufacturing process. More specifically, the wafer is adsorbed to a vacuum chuck when the center of the wafer and the wafer fixing chuck do not coincide in a photo process for semiconductor device manufacturing. At the same time, it is easy to check. Conventionally, when a photosensitive liquid is to be applied to a wafer for a photolithography process for semiconductor preparation, a vacuum chuck (not shown) is loaded on the upper surface of the wafer suction vacuum chuck 2 as shown in FIG. When 2) rotates at a high speed, the photoresist is sprayed on the upper surface of the wafer, so that the photosensitive film is applied on the upper surface of the wafer.
이 과정을 보다 상세히 살펴보면 후술하는 바와 같다.Looking at this process in more detail as follows.
먼저, 센딩부(Sending Section)로부터 공급되는 웨이퍼는 트랜스퍼 메카니즘(Transfer Mechanism)(도시는 생략함)의 작동에 의해 스피너 장비내로 반송된 후 가이드 레일(도시는 생략함)을 타고 수평방향으로 이동하여 진공척(2) 상부로 이송된다.First, the wafer supplied from the sending section is conveyed into the spinner device by the operation of a transfer mechanism (not shown), and then moved horizontally by a guide rail (not shown). It is conveyed to the upper part of the vacuum chuck 2.
이때, 기이드 레일을 타고 이송되는 웨이퍼는 진공척(2)의 상면에 비해 약 5㎜ 정도 높은 위치를 유지하면서 진공척 상부로 이송된다. 이는, 가이드 레일이 진공척에 비해 약 5mm 정도 높은 위치에서 웨이퍼를 반송하기 때문이다.At this time, the wafer to be transported on the guide rail is transferred to the upper part of the vacuum chuck while maintaining a position about 5 mm higher than the upper surface of the vacuum chuck 2. This is because the guide rail conveys the wafer at a position about 5 mm higher than that of the vacuum chuck.
한편, 상기 가이드 레일에 의해 웨이퍼가 수평방향으로 이송되어 진공척(2) 상부 위치에 도달하게 되면,별도로 설치된 웨이퍼 위치검출 센서(도시는 생략함)가 웨이퍼가 진공척 위치에 도달했음을 검출하여 가이드 레일의 이동을 정지시키게 된다.On the other hand, when the wafer is transferred in the horizontal direction by the guide rail to reach the upper position of the vacuum chuck 2, a separately installed wafer position detection sensor (not shown) detects that the wafer has reached the vacuum chuck position and guides the wafer. The rail will stop moving.
이때, 상기 웨이퍼 위치검출 센서는 가이드 레일 양측에 이격 설치되어 웨이퍼의 진입시 빛의 수광여부를 통해 웨이퍼의 진입여부를 검출하므로써 웨이퍼가 진공척 위치에 도달했음을 검출하게 된다.At this time, the wafer position detection sensor is installed on both sides of the guide rail to detect whether the wafer has reached the vacuum chuck position by detecting the entry of the wafer through whether the light received when entering the wafer.
한편, 상기와 같이 웨이퍼가 진공척 위치에 도달했음이 검출되어 웨이퍼를 이송시키는 가이드 레일이 정지함에 따라 웨이퍼는 진공척(2) 상부에 머물게 된다.On the other hand, as described above, when the wafer has reached the vacuum chuck position and the guide rail for transferring the wafer stops, the wafer stays above the vacuum chuck 2.
이와 같이, 웨이퍼가 진공척(2) 상부에 위치한 후에는 가이드 레일에 장착된 웨이퍼 가이드(도시는 생략함)가 웨이퍼 양측에서 동시에 전진하여 웨이퍼의 중심이 진공척(2)의 중심과 일치하도록 센터링 작용을 하게 된다.As such, after the wafer is positioned above the vacuum chuck 2, the wafer guides (not shown) mounted on the guide rails advance simultaneously on both sides of the wafer so that the center of the wafer coincides with the center of the vacuum chuck 2. It works.
한편, 상기 웨이퍼 가이드는 웨이퍼의 양측 외주면을 밀도록 2개의 부분(Piece)로 구성되며 웨이퍼와 같은 곡률 반경을 가지는 면이 각각 형성되어 있다.On the other hand, the wafer guide is composed of two pieces (Piece) to push the outer peripheral surface of the both sides of the wafer, each surface having the same radius of curvature as the wafer is formed.
상기한 바와 같이, 웨이퍼 가이드에 의한 센터링이 이루어진 후에 가이드 레일이 하강하므로써 웨이퍼(1)가 진공척(2)위에 안착됨에 따라 진공척(2)에는 진공력이 인가되어 웨이퍼가 진공척(2) 상면에 흡착된다.As described above, a vacuum force is applied to the vacuum chuck 2 as the wafer 1 rests on the vacuum chuck 2 by lowering the guide rail after the centering by the wafer guide is performed, so that the wafer is vacuum chuck 2. It is adsorbed on the upper surface.
이때, 만약 웨이퍼(1)가 진공척(2) 상부에 흡착되지 않을 경우에는 진공라인상에 설치된 진공센서(도시는 생략함)에 의해 흡착에러신호가 발생하게 된다.At this time, if the wafer 1 is not adsorbed on the vacuum chuck 2, an adsorption error signal is generated by a vacuum sensor (not shown) installed on the vacuum line.
한편, 진공척(2)이 장착된 모터플랜지(4) 외측면에 설치된 컵 호울더(Cup Holder)(6) 상면에는 어퍼 컵(Upper Cup)(7), 인사이드 컵(Inside Cup)(8), 로우어 컵(Lower Cup)(9)으로 구성된 캐치컵(10)이 안착되어 있는데, 웨이퍼가 진공척(2) 상면에 흡착된 후에는 에어실린더(11)의 작동에 의해 플런저(12)가 전진하여 컵 호울러(6)를 상승시킴에 따라 캐치컵(10)이 함께 일정 위치까지 상승하게 된다.Meanwhile, an upper cup (7) and an inner cup (8) are provided on an upper surface of the cup holder (6) provided on the outer surface of the motor flange (4) on which the vacuum chuck (2) is mounted. The catch cup 10 composed of a lower cup 9 is seated. After the wafer is adsorbed to the upper surface of the vacuum chuck 2, the plunger 12 is operated by the operation of the air cylinder 11. As the cup holder 6 is advanced to move forward, the catch cup 10 is raised together to a predetermined position.
이때, 캐치컵(10)은 어퍼컵(7)의 플랜지부(13)가 웨이퍼의 측면을 감싸는 위치까지 상승한 후 정지하게 되는데, 이는 감광액의 분사시 진공척(2)의 고속회전에 따라 웨이퍼 상면에 분사된 후 원심력에 의해 비산되어 웨이퍼의 변경방향으로 비산되는 감광액이 플랜지부(13)내면에 부딪힌 후 흘러내려 로우러컵(9)의 덕트(14)를 통해 드레인(drain)측으로 빠져나가도록 하므로써 장비의 오염을 방지하기 위함이다.At this time, the catch cup 10 stops after the flange portion 13 of the upper cup 7 is raised to a position surrounding the side surface of the wafer, which is the upper surface of the wafer according to the high speed rotation of the vacuum chuck 2 when the photosensitive liquid is injected. After spraying on, the photosensitive liquid scattered by the centrifugal force and scattered in the direction of change of the wafer hits the inner surface of the flange portion 13 and then flows down so as to escape through the duct 14 of the roller cup 9 toward the drain side. This is to prevent contamination of the equipment.
따라서, 캐치컵(10)이 일정위치까지 상승한 다음 웨이퍼가 흡착된 진공척(2)이 고속회전할 때 어퍼컵(7)의 통공을 통해 감광액이 웨이퍼 중심에 분사되면, 분사된 감광액은 고속회전 하는 웨이퍼에 작용하는 원심력에 의해 웨이퍼 상면에 균일하게 도포된다.Therefore, when the catch cup 10 is raised to a certain position and the vacuum chuck 2 on which the wafer is adsorbed rotates at a high speed, when the photoresist is injected at the center of the wafer through the aperture of the upper cup 7, the injected photoresist is rotated at high speed. It is uniformly applied to the wafer upper surface by centrifugal force acting on the wafer.
한편, 모터플랜지(4)일측에 장착된 세정노즐(15)은 웨이퍼 뒷면에 도포된 감광액 및 이물질을 세정(Rinse)하기 위해 설치되며, 상기 캐치컵(10)을 구성하는 로우어컵(9) 일측에 설치된 덕트(14)는 감광액 도포시 로우어컵(9)으로 흘러내린 감광액이 드레인(도시는 생략함)측으로 빠져나가도록 덕트캡(16)에 연결된다.On the other hand, the cleaning nozzle 15 mounted on one side of the motor flange 4 is installed to rinse the photosensitive liquid and foreign matter applied to the back side of the wafer, and one side of the lower cup 9 constituting the catch cup 10. The duct 14 installed in the duct cap 16 is connected to the duct cap 16 so that the photoresist flowing down to the lower cup 9 when the photoresist is applied is discharged to the drain (not shown) side.
그러나, 이와 같은 종래의 반도체소자 제조공정용 스피너는 웨이퍼와 진공척(2)의 중심을 일치시키는 센터링 작업을 웨이퍼 가이드의 웨이퍼 안내작용에 의해 수행하게되는데, 웨이퍼 가이드가 같은 작용을 장시간 반복함에 따라 2개의 피스(Piece)로 된 웨이퍼 가이드의 어느 한쪽의 운동거리에 편심량이 생길 경우 웨이퍼(1)가 진공척(2) 중심에서 벗어나게 된다.However, such a conventional spinner for a semiconductor device manufacturing process performs a centering operation for matching the center of the wafer and the vacuum chuck 2 by the wafer guiding action of the wafer guide, and as the wafer guide repeats the same action for a long time. When an eccentric amount is generated at one movement distance of the two-piece wafer guide, the wafer 1 is displaced from the center of the vacuum chuck 2.
또한, 웨이퍼 가이드가 가이드 레일에 고정되도록 체결한 체결나사 등이 풀려 느슨해지므로써 웨이퍼 가이드의 작용시 유격이 발생할 경우에도 마찬가지로 웨이퍼와 진공척(2) 사이에 정확한 센터링이 이루어지지 못하였다.In addition, since the fastening screws and the like, which are fastened to the wafer guides to be fixed to the guide rails, are loosened and loosened, the centering between the wafer and the vacuum chuck 2 may not be precisely performed even when play occurs during the action of the wafer guides.
이와 같이, 웨이퍼와 진공척(2)의 센터링이 정확히 이루어지지 않은 때에는 진공령에 의해 진공척(2)에 흡착된 웨이퍼가 감광액 도포시 고속회전하는 진공척(2)에 작용하는 원심력에 의해 진공척(2)으로부터 이탈되어 캐치컵(10)에 부딪혀 깨어질 우려가 있었다.As described above, when the centering of the wafer and the vacuum chuck 2 is not performed correctly, the wafer adsorbed to the vacuum chuck 2 by the vacuum command is vacuumed by the centrifugal force acting on the vacuum chuck 2 which rotates at high speed when the photosensitive liquid is applied. There was a risk of being separated from the chuck 2 and hitting the catch cup 10.
상기와 같이 웨이퍼가 깨어진 경우에는 장비 내에 깨우진 웨이퍼를 모두 제거해야 하므로 장비의 다운(down)으로 인한 시간손실 및 정비 작업에 따른 번거러움이 수반되는 문제점이 있었다.When the wafer is broken as described above, it is necessary to remove all the wafers that are broken in the equipment, and thus there is a problem that time is lost due to down of the equipment and hassle due to maintenance work.
뿐만 아니라, 웨이퍼가 진공척(2)으로부터 이탈되지 않고 감광액이 도포 되더라도 웨이퍼와 진공척(2)의 센터링이 정확히 이루어지지 않은 경우에는 웨이퍼의 가장자리(약 3㎜)를 세정하는 사이드 린스(Side Rinse)시 편심이 일어난 어느 한쪽의 가장자리는 세정이 되지 않고 다른 한쪽은 3㎜보다 더 깊이 세정되므로써 후공정의 진행시 차질을 빚게 되는 등의 많은 문제점이 있었다.In addition, even if the wafer is not separated from the vacuum chuck 2 and the photosensitive liquid is applied, the side rinse that cleans the edge (about 3 mm) of the wafer when the wafer and the vacuum chuck 2 are not centered correctly. At the time of eccentricity, one of the edges is not cleaned and the other is washed deeper than 3 mm, which causes problems in progress of the post process.
본 발명은 상기한 제반 문제점을 해결하기 위한 겻으로서, 반도체 제조를 위한 감광막 도포공정시 웨이퍼 가이드에 의해 센터링된 웨이퍼와 진공척의 중심이 일치하지 않을 경우 웨이퍼가 진공척에 흡착될 수 없도록 하고 이를 작업자가 확인할 수 있도록 하므로써 웨이퍼의 파손 및 사이드 린스(side rinse)가 잘못되는 현상을 미연에 방지하여 웨이퍼의 수율을 향상시킬 수 있도록 한 반도체소자 제조공정용 스피너의 웨이퍼 센터링 확인장치를 제공하는데 그 목적이 있다.The present invention is to solve the above problems, the wafer centered by the wafer guide during the photosensitive film coating process for semiconductor manufacturing does not match the center of the vacuum chuck does not allow the wafer to be adsorbed to the vacuum chuck and the worker The purpose of the present invention is to provide a wafer centering verification device for a spinner for a semiconductor device manufacturing process that can improve wafer yield by preventing wafer breakage and side rinse from occurring. have.
상기한 목적을 달성하기 위해, 본 발명은 웨이퍼 가이드에 의한 웨이퍼와 진공척의 센터링이 정확히 수행되지 않았을 때 진공척에 로딩되는 웨이퍼가 진공척에 흡착되지 않도록 진공척 외주면과 일정간격 이격되는 경사면이 형성된 웨이퍼 센터링 확인용 치구가 모터플랜지에 장착되는 반도체소자 제조공정용 스피너의 웨이퍼 센터링 확인장치이다.In order to achieve the above object, the present invention is formed with an inclined surface spaced apart from the outer peripheral surface of the vacuum chuck so that the wafer is loaded on the vacuum chuck when the centering of the wafer and the vacuum chuck by the wafer guide is not accurately carried out The wafer centering check fixture is a wafer centering check device for a spinner for a semiconductor device manufacturing process in which a jig for wafer centering is mounted on a motor flange.
이하, 본 발명의 일실시예를 첨부도면 제2도 및 제3도를 참조하여 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS. 2 and 3 of the accompanying drawings.
제2도는 본 발명에 따른 스피너에 캐치컵이 결합되는 상태를 나타낸 분해사시도이고, 제3도는 본 발명의 작동상태를 나타낸 요부 종단면도로서, 본 발명은 감광막 도포공정시 웨이퍼 가이드에 의한 웨이퍼(1)와 진공척(2)의 센터링이 정확이 수행되지 못한 경우, 진공척(2)에 로딩되는 웨이퍼(1)가 진공척(2) 상면에 흡착되지 못하도록 하는 웨이퍼 센터링 확잉용 치구(3)가 모터플랜지(4)에 장착되어 구성된다.FIG. 2 is an exploded perspective view showing a state in which a catch cup is coupled to a spinner according to the present invention, and FIG. 3 is a longitudinal sectional view of a main portion showing an operating state of the present invention. If the centering of the vacuum chuck 2 and the vacuum chuck 2 are not performed correctly, the wafer centering expansion jig 3 for preventing the wafer 1 loaded on the vacuum chuck 2 from adsorbing on the upper surface of the vacuum chuck 2 is provided. It is configured to be mounted on the motor flange (4).
이때, 상기 웨이퍼 센터링 확인용 치구(3)의 상단부에는 진공척(2)의 외주면으로 일정간격 이격되는 경사면(5)이 구비되어, 센터링이 정확이 수행되지 않아 진공척(2)의 중심으로부터 편심된 웨이퍼(1)가 진공척(2) 상면에 안착되기 위해 하강할 경우 상기 웨이퍼(1)가 웨이퍼 센터링 확인용 치구(3)의 경사면에 기울어진 채 걸리므로써 진공척에(2)에 흡착되지 않도록 구성된다.At this time, the upper end of the wafer centering check jig (3) is provided with an inclined surface (5) spaced apart by a predetermined interval to the outer peripheral surface of the vacuum chuck (2), the centering is not performed accurately, eccentric from the center of the vacuum chuck (2) When the wafer 1 is lowered to be seated on the upper surface of the vacuum chuck 2, the wafer 1 is inclined to the inclined surface of the wafer centering check jig 3 so that the wafer 1 is not attracted to the vacuum chuck 2. It is configured not to.
한편, 상기 웨이퍼 센터링 확인용 치구(3)는 치구의 경사면(5) 상단이 진공척(2) 상면으로부터 3㎜ 내지 5㎜ 높은 지점에 위치하도록 설치된다.On the other hand, the wafer centering check jig (3) is installed so that the upper end of the inclined surface (5) of the jig is 3mm to 5mm high from the upper surface of the vacuum chuck (2).
이와 같이 구성된 본 발명은 제2도 및 제3도에 나타낸 바와 같이, 웨이퍼에 감광막을 도포하고자 하는 경우 트랜스퍼 메카니즘의 작동에 의해 스피너장비 내로 반송된 웨이퍼(1)를 다시 가이드 레일을 이용하여 진공척(2) 상부로 이동시키게 된다.As shown in FIG. 2 and FIG. 3, the present invention configured as described above, when the photosensitive film is to be applied to the wafer, the wafer 1 conveyed into the spinner equipment by the operation of the transfer mechanism is again vacuum-guided using the guide rail. (2) It moves to the top.
또한, 가이드 레일을 타고 진공척(2) 상부로 이동하는 웨이퍼는 진공척(2) 상부에 도달했을 때, 별도로 설치된 웨이퍼 위치검출 센서(도시는 생략함)에 의해 센싱되어 정지하게 되며, 이에 따라 가이드 레일 일측에 장착된 웨이퍼 가이드의 약 피스가 전진하면서 웨이퍼를 안내하여 웨이퍼와 진공척(2)의 중심이 일치하도록 센터링하게 된다.In addition, the wafer moving on the guide rail to the upper portion of the vacuum chuck 2 is sensed and stopped by a wafer position detection sensor (not shown) separately installed when the upper portion of the vacuum chuck 2 reaches the upper portion. About a piece of the wafer guide mounted on one side of the guide rail is advanced to guide the wafer so that the center of the wafer and the vacuum chuck 2 coincide with each other.
상기와 같이 하여 센터링이 끝난 후에는 진공척(2)이 에어실린더(11)의 작동에 의해 웨이퍼 위치까지 상승하게 되어, 가이드 레일이 및 웨이퍼 가이드가 웨이퍼로부터 후퇴하여 물러남에 따라 웨이퍼(1)는 진공척(2)의 상면에 안착되며, 그 후 진공척(2)은 다시 하강하게 된다.After the centering is completed as described above, the vacuum chuck 2 is raised to the wafer position by the operation of the air cylinder 11, and as the guide rail and the wafer guide retreat from the wafer, the wafer 1 It is seated on the upper surface of the vacuum chuck 2, after which the vacuum chuck 2 is lowered again.
한편, 진공척(2)이 하강하여 원위치한 다음에는 진공압이 인가되어 웨이퍼(1)가 진공척(2) 상면에 흡착된다.On the other hand, after the vacuum chuck 2 is lowered and returned to its original position, a vacuum pressure is applied so that the wafer 1 is adsorbed on the upper surface of the vacuum chuck 2.
그러나, 웨이퍼(1)와 진공척(2)의 센터링이 정확히 수행되지 않은 경우에는, 진공척이 상승하여 제3도 (b)에 가상선으로 나타낸 바와 같이 웨이퍼가 진공척 상면에 안착된 다음, 진공척이 재하강시 웨이퍼(1)가 편심량에 의해 진공척(2) 외주면에 설치된 웨이퍼 센터링 확인용 치구(3)의 경사면(5)에 제3도의 (b)에 실선으로 나타낸 바와 같이 기울어진 채 걸리게 된다.However, if the centering of the wafer 1 and the vacuum chuck 2 is not performed correctly, the vacuum chuck is raised and the wafer is seated on the upper surface of the vacuum chuck as shown by the virtual line in FIG. When the vacuum chuck is lowered, the wafer 1 is inclined by the eccentric amount to the inclined surface 5 of the wafer centering check jig 3 provided on the outer circumferential surface of the vacuum chuck 2 as shown by a solid line in FIG. I get caught.
이와 같이 된 경우에는 진공척(2)에 진공압이 인가되어도 웨이퍼(1)가 진공척(2) 상면에 흡착되지 못하게 되며, 웨이퍼(1)의 흡착이 일정시간 내에 이루어지지 못한 경우에는 진공라인상에 구비된 진공센서(Vacuum Sensor)(도시는 생략함)가 이를 감지하여 작업자가 할 수 있도록 흡착에러신호를 발생하게 된다.In this case, even if a vacuum pressure is applied to the vacuum chuck 2, the wafer 1 is not adsorbed on the upper surface of the vacuum chuck 2, and if the wafer 1 is not adsorbed within a predetermined time, the vacuum line A vacuum sensor (not shown) provided on the top detects this and generates an adsorption error signal so that an operator can do it.
이에 따라, 작업자는 웨이퍼의 센터링 불량을 인지하여 고장이 발생한 부분을 정비할 수 있게 된다.Accordingly, the operator can recognize the defective centering of the wafer to be able to maintain the portion where the failure occurred.
이상에서와 같이, 본 발명은 종래와 같이 웨이퍼와 진공척(2)의 센터링이 정확이 이루어지지 않은 상태로 진공척(2)의 회전이 이루어져 웨이퍼가 진공척(2)으로부터 이탈되어 파손되거나, 감광막의 도포후 웨이퍼 가장자리를 세정하는 사이드린스 작업이 정확히 수행될 수 없어 후공정에 차질을 빚게 되는 등의 일련의 현상을 미연에 방지할 수 있게 된다.As described above, the present invention is the rotation of the vacuum chuck 2 in a state in which the centering of the wafer and the vacuum chuck 2 is not made as in the prior art, the wafer is broken away from the vacuum chuck 2, After applying the photoresist, a side rinse operation for cleaning the wafer edge cannot be performed accurately, thereby preventing a series of phenomena, such as disruption of the post process.
한편, 상기 웨이퍼 센터링 확인용 치구(3)는 진공척(2) 중심에 대한 웨이퍼(1)의 편심량이 큰 경우에는 웨이퍼(1)가 제4도의 (b)와 같이 경사진 상태로 걸려있게 하여 진공척(2)ㄹ에 흡착되는 현상을 방지하지만, 편심량이 적은 경우에는 웨이퍼(1)가 경사면(5)을 미끄러져 내려오므로써 진공척(2)의 중심과 일치하게 되는 자기정렬(Self Alignment)기능을 수행하여 생산성을 향상시킬 수 있는 효과도 가져오게 된다.On the other hand, when the eccentricity of the wafer 1 with respect to the center of the vacuum chuck 2 is large, the wafer centering check jig 3 causes the wafer 1 to be caught in an inclined state as shown in FIG. Adsorption of the vacuum chuck (2) is prevented, but when the amount of eccentricity is small, the wafer (1) slides down the inclined surface (5) so that the self-alignment coincides with the center of the vacuum chuck (2). It also has the effect of improving productivity by performing the function.
이상에서와 같이, 본 발명은 반도체소자 제조를 위한 포토공정시 웨이퍼에 감광막을 도포하기 위해 진공척(2)에 웨이퍼를 로딩시킬 경우 웨이퍼(1)와 진공척(2)과의 센터링이 정확히 수행되지 않았을 때, 웨이퍼(1)가 진공척(2)에 흡착되지 않도록 하여 웨이퍼의 파손을 배제하는 한편 웨이퍼의 사이드린스 작업이 정확하게 이루어질 수 있도록 하여 공정수율을 향상시킬 수 있도록 한 매우 유용한 발명이다.As described above, according to the present invention, when the wafer is loaded on the vacuum chuck 2 to apply a photoresist film to the wafer during the photo process for manufacturing a semiconductor device, the centering of the wafer 1 and the vacuum chuck 2 is performed correctly. If not, it is a very useful invention to improve the process yield by preventing the wafer 1 from adsorbing to the vacuum chuck 2 so as to eliminate breakage of the wafer and to accurately perform side rinsing of the wafer.
Claims (1)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950026649A KR0179176B1 (en) | 1995-08-25 | 1995-08-25 | Wafer centering conviction apparatus of spinner |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950026649A KR0179176B1 (en) | 1995-08-25 | 1995-08-25 | Wafer centering conviction apparatus of spinner |
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