KR0137430B1 - 소자분리 영역을 가지는 반도체 장치 및 그 제조방법 - Google Patents

소자분리 영역을 가지는 반도체 장치 및 그 제조방법

Info

Publication number
KR0137430B1
KR0137430B1 KR1019940015529A KR19940015529A KR0137430B1 KR 0137430 B1 KR0137430 B1 KR 0137430B1 KR 1019940015529 A KR1019940015529 A KR 1019940015529A KR 19940015529 A KR19940015529 A KR 19940015529A KR 0137430 B1 KR0137430 B1 KR 0137430B1
Authority
KR
South Korea
Prior art keywords
width
stress
isolation region
oxide film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940015529A
Other languages
English (en)
Korean (ko)
Other versions
KR950004491A (ko
Inventor
히데오 미우라
마코토 오가사와라
히로오 마스다
쥰 무라타
노리아키 오카모토
Original Assignee
취체역 가나이 쓰토무
가부시키가이샤 히타치세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 취체역 가나이 쓰토무, 가부시키가이샤 히타치세이사쿠쇼 filed Critical 취체역 가나이 쓰토무
Publication of KR950004491A publication Critical patent/KR950004491A/ko
Application granted granted Critical
Publication of KR0137430B1 publication Critical patent/KR0137430B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H10W10/012—
    • H10W10/13—

Landscapes

  • Element Separation (AREA)
KR1019940015529A 1993-07-02 1994-06-30 소자분리 영역을 가지는 반도체 장치 및 그 제조방법 Expired - Fee Related KR0137430B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18867393 1993-07-02
JP93-188673 1993-07-02

Publications (2)

Publication Number Publication Date
KR950004491A KR950004491A (ko) 1995-02-18
KR0137430B1 true KR0137430B1 (ko) 1998-06-01

Family

ID=16227851

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940015529A Expired - Fee Related KR0137430B1 (ko) 1993-07-02 1994-06-30 소자분리 영역을 가지는 반도체 장치 및 그 제조방법

Country Status (2)

Country Link
KR (1) KR0137430B1 (OSRAM)
TW (1) TW260828B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160006420A (ko) * 2014-07-09 2016-01-19 삼성전자주식회사 스트레스 검출 방법, 컴팩트 모델 트레이닝 방법, 스트레스 완화 방법 및 컴퓨팅 시스템

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160006420A (ko) * 2014-07-09 2016-01-19 삼성전자주식회사 스트레스 검출 방법, 컴팩트 모델 트레이닝 방법, 스트레스 완화 방법 및 컴퓨팅 시스템

Also Published As

Publication number Publication date
KR950004491A (ko) 1995-02-18
TW260828B (OSRAM) 1995-10-21

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