JPWO2025089009A5 - - Google Patents

Info

Publication number
JPWO2025089009A5
JPWO2025089009A5 JP2025553066A JP2025553066A JPWO2025089009A5 JP WO2025089009 A5 JPWO2025089009 A5 JP WO2025089009A5 JP 2025553066 A JP2025553066 A JP 2025553066A JP 2025553066 A JP2025553066 A JP 2025553066A JP WO2025089009 A5 JPWO2025089009 A5 JP WO2025089009A5
Authority
JP
Japan
Prior art keywords
trench
forming
semiconductor device
trenches
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025553066A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2025089009A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/035494 external-priority patent/WO2025089009A1/ja
Publication of JPWO2025089009A1 publication Critical patent/JPWO2025089009A1/ja
Publication of JPWO2025089009A5 publication Critical patent/JPWO2025089009A5/ja
Pending legal-status Critical Current

Links

JP2025553066A 2023-10-24 2024-10-03 Pending JPWO2025089009A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023182416 2023-10-24
PCT/JP2024/035494 WO2025089009A1 (ja) 2023-10-24 2024-10-03 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2025089009A1 JPWO2025089009A1 (https=) 2025-05-01
JPWO2025089009A5 true JPWO2025089009A5 (https=) 2026-01-15

Family

ID=95515559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025553066A Pending JPWO2025089009A1 (https=) 2023-10-24 2024-10-03

Country Status (3)

Country Link
US (1) US20260020271A1 (https=)
JP (1) JPWO2025089009A1 (https=)
WO (1) WO2025089009A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5420225B2 (ja) * 2008-10-29 2014-02-19 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9666666B2 (en) * 2015-05-14 2017-05-30 Alpha And Omega Semiconductor Incorporated Dual-gate trench IGBT with buried floating P-type shield
JP6284314B2 (ja) * 2012-08-21 2018-02-28 ローム株式会社 半導体装置
CN111033751B (zh) * 2018-02-14 2023-08-18 富士电机株式会社 半导体装置
EP4350777A4 (en) * 2022-01-20 2024-11-27 Fuji Electric Co., Ltd. Semiconductor device

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