JPWO2024262221A1 - - Google Patents

Info

Publication number
JPWO2024262221A1
JPWO2024262221A1 JP2025527598A JP2025527598A JPWO2024262221A1 JP WO2024262221 A1 JPWO2024262221 A1 JP WO2024262221A1 JP 2025527598 A JP2025527598 A JP 2025527598A JP 2025527598 A JP2025527598 A JP 2025527598A JP WO2024262221 A1 JPWO2024262221 A1 JP WO2024262221A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025527598A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024262221A1 publication Critical patent/JPWO2024262221A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/7295Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors on the rear surface of insulating package substrates, interposers or RDLs, for connection outside of the package, e.g. ball grid array [BGA] bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B80/00Assemblies of multiple devices comprising at least one memory device covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D80/00Assemblies of multiple devices comprising at least one device covered by this subclass
    • H10D80/30Assemblies of multiple devices comprising at least one device covered by this subclass the at least one device being covered by groups H10D84/00 - H10D86/00, e.g. assemblies comprising integrated circuit processor chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00Direct bonding of chips, wafers or substrates
    • H10W80/301Bonding techniques, e.g. hybrid bonding
    • H10W80/314Bonding techniques, e.g. hybrid bonding characterized by direct bonding of pads or other interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/10Configurations of laterally-adjacent chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/26Configurations of stacked chips the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
JP2025527598A 2023-06-20 2024-05-21 Pending JPWO2024262221A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023101093 2023-06-20
PCT/JP2024/018677 WO2024262221A1 (ja) 2023-06-20 2024-05-21 半導体モジュール

Publications (1)

Publication Number Publication Date
JPWO2024262221A1 true JPWO2024262221A1 (https=) 2024-12-26

Family

ID=93935682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025527598A Pending JPWO2024262221A1 (https=) 2023-06-20 2024-05-21

Country Status (3)

Country Link
US (1) US20260101521A1 (https=)
JP (1) JPWO2024262221A1 (https=)
WO (1) WO2024262221A1 (https=)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989004113A1 (en) * 1987-10-20 1989-05-05 Irvine Sensors Corporation High-density electronic modules, process and product
US5362986A (en) * 1993-08-19 1994-11-08 International Business Machines Corporation Vertical chip mount memory package with packaging substrate and memory chip pairs
US5567654A (en) * 1994-09-28 1996-10-22 International Business Machines Corporation Method and workpiece for connecting a thin layer to a monolithic electronic module's surface and associated module packaging
US7562271B2 (en) * 2005-09-26 2009-07-14 Rambus Inc. Memory system topologies including a buffer device and an integrated circuit memory device
JP5671200B2 (ja) * 2008-06-03 2015-02-18 学校法人慶應義塾 電子回路
US9305606B2 (en) * 2009-08-17 2016-04-05 Micron Technology, Inc. High-speed wireless serial communication link for a stacked device configuration using near field coupling
JP5635759B2 (ja) * 2009-10-15 2014-12-03 学校法人慶應義塾 積層半導体集積回路装置
JP2011233842A (ja) * 2010-04-30 2011-11-17 Toshiba Corp 不揮発性半導体記憶装置
WO2013081633A1 (en) * 2011-12-02 2013-06-06 Intel Corporation Stacked memory allowing variance in device interconnects
US9065722B2 (en) * 2012-12-23 2015-06-23 Advanced Micro Devices, Inc. Die-stacked device with partitioned multi-hop network
CN113056819B (zh) * 2019-11-11 2022-06-03 超极存储器股份有限公司 半导体模块、dimm模块以及它们的制造方法
WO2024057707A1 (ja) * 2022-09-12 2024-03-21 先端システム技術研究組合 半導体モジュール及びその製造方法

Also Published As

Publication number Publication date
WO2024262221A1 (ja) 2024-12-26
US20260101521A1 (en) 2026-04-09

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