JPWO2024185473A5 - - Google Patents

Info

Publication number
JPWO2024185473A5
JPWO2024185473A5 JP2025505187A JP2025505187A JPWO2024185473A5 JP WO2024185473 A5 JPWO2024185473 A5 JP WO2024185473A5 JP 2025505187 A JP2025505187 A JP 2025505187A JP 2025505187 A JP2025505187 A JP 2025505187A JP WO2024185473 A5 JPWO2024185473 A5 JP WO2024185473A5
Authority
JP
Japan
Prior art keywords
lead
thickness direction
semiconductor device
drain
joined
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025505187A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024185473A1 (cg-RX-API-DMAC7.html
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/005698 external-priority patent/WO2024185473A1/ja
Publication of JPWO2024185473A1 publication Critical patent/JPWO2024185473A1/ja
Publication of JPWO2024185473A5 publication Critical patent/JPWO2024185473A5/ja
Pending legal-status Critical Current

Links

JP2025505187A 2023-03-03 2024-02-19 Pending JPWO2024185473A1 (cg-RX-API-DMAC7.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023032973 2023-03-03
PCT/JP2024/005698 WO2024185473A1 (ja) 2023-03-03 2024-02-19 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024185473A1 JPWO2024185473A1 (cg-RX-API-DMAC7.html) 2024-09-12
JPWO2024185473A5 true JPWO2024185473A5 (cg-RX-API-DMAC7.html) 2025-11-18

Family

ID=92675106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025505187A Pending JPWO2024185473A1 (cg-RX-API-DMAC7.html) 2023-03-03 2024-02-19

Country Status (2)

Country Link
JP (1) JPWO2024185473A1 (cg-RX-API-DMAC7.html)
WO (1) WO2024185473A1 (cg-RX-API-DMAC7.html)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013222781A (ja) * 2012-04-16 2013-10-28 Sharp Corp 半導体装置のデバイス実装構造
JP2015056564A (ja) * 2013-09-12 2015-03-23 古河電気工業株式会社 半導体装置及びその製造方法
US9735240B2 (en) * 2015-12-21 2017-08-15 Toshiba Corporation High electron mobility transistor (HEMT)
US11107755B2 (en) * 2019-05-12 2021-08-31 Zhanming LI Packaging for lateral high voltage GaN power devices
JP7312604B2 (ja) * 2019-05-13 2023-07-21 ローム株式会社 半導体装置

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