JPWO2024180973A1 - - Google Patents
Info
- Publication number
- JPWO2024180973A1 JPWO2024180973A1 JP2025503649A JP2025503649A JPWO2024180973A1 JP WO2024180973 A1 JPWO2024180973 A1 JP WO2024180973A1 JP 2025503649 A JP2025503649 A JP 2025503649A JP 2025503649 A JP2025503649 A JP 2025503649A JP WO2024180973 A1 JPWO2024180973 A1 JP WO2024180973A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/128—Anode regions of diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/129—Cathode regions of diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023031997 | 2023-03-02 | ||
| PCT/JP2024/002747 WO2024180973A1 (ja) | 2023-03-02 | 2024-01-30 | Ｒｃ－ｉｇｂｔおよびｒｃ－ｉｇｂｔの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024180973A1 true JPWO2024180973A1 (https=) | 2024-09-06 |
| JPWO2024180973A5 JPWO2024180973A5 (https=) | 2025-11-14 |
Family
ID=92590336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025503649A Pending JPWO2024180973A1 (https=) | 2023-03-02 | 2024-01-30 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024180973A1 (https=) |
| WO (1) | WO2024180973A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6144510B2 (ja) * | 2013-03-11 | 2017-06-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP6021032B2 (ja) * | 2014-05-28 | 2016-11-02 | パナソニックＩｐマネジメント株式会社 | 半導体素子およびその製造方法 |
| JP6801324B2 (ja) * | 2016-09-15 | 2020-12-16 | 富士電機株式会社 | 半導体装置 |
| JP6784337B2 (ja) * | 2017-11-16 | 2020-11-11 | 富士電機株式会社 | 半導体装置 |
| WO2021044814A1 (ja) * | 2019-09-05 | 2021-03-11 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP7390984B2 (ja) * | 2020-06-03 | 2023-12-04 | 三菱電機株式会社 | 半導体装置 |
-
2024
- 2024-01-30 JP JP2025503649A patent/JPWO2024180973A1/ja active Pending
- 2024-01-30 WO PCT/JP2024/002747 patent/WO2024180973A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024180973A1 (ja) | 2024-09-06 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250825 |