JPWO2024142602A1 - - Google Patents

Info

Publication number
JPWO2024142602A1
JPWO2024142602A1 JP2024567257A JP2024567257A JPWO2024142602A1 JP WO2024142602 A1 JPWO2024142602 A1 JP WO2024142602A1 JP 2024567257 A JP2024567257 A JP 2024567257A JP 2024567257 A JP2024567257 A JP 2024567257A JP WO2024142602 A1 JPWO2024142602 A1 JP WO2024142602A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024567257A
Other languages
Japanese (ja)
Other versions
JPWO2024142602A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024142602A1 publication Critical patent/JPWO2024142602A1/ja
Publication of JPWO2024142602A5 publication Critical patent/JPWO2024142602A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2024567257A 2022-12-26 2023-11-02 Pending JPWO2024142602A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022208554 2022-12-26
PCT/JP2023/039707 WO2024142602A1 (ja) 2022-12-26 2023-11-02 露光装置、デバイス製造方法及び制御方法

Publications (2)

Publication Number Publication Date
JPWO2024142602A1 true JPWO2024142602A1 (https=) 2024-07-04
JPWO2024142602A5 JPWO2024142602A5 (https=) 2025-08-19

Family

ID=91716947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024567257A Pending JPWO2024142602A1 (https=) 2022-12-26 2023-11-02

Country Status (6)

Country Link
US (1) US20250383608A1 (https=)
JP (1) JPWO2024142602A1 (https=)
KR (1) KR20250112838A (https=)
CN (1) CN120418732A (https=)
TW (1) TW202427068A (https=)
WO (1) WO2024142602A1 (https=)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004228548A (ja) * 2002-11-29 2004-08-12 Nikon Corp 照明装置、露光装置及び露光方法
JP2007052214A (ja) * 2005-08-17 2007-03-01 Nikon Corp 走査型露光装置及びマイクロデバイスの製造方法
JP2009009127A (ja) * 2007-06-14 2009-01-15 Asml Netherlands Bv テレセントリック性の制御を瞳の充填に使用するリソグラフィ装置及びデバイス製造方法
JP2009105378A (ja) * 2007-08-17 2009-05-14 Asml Holding Nv テレセントリック性のリアルタイム測定
JP2010237420A (ja) * 2009-03-31 2010-10-21 Hitachi Via Mechanics Ltd マスクレス露光装置の光学系補正方法
JP2011007941A (ja) * 2009-06-24 2011-01-13 Fujifilm Corp 露光ヘッド及び露光装置
US20110149297A1 (en) * 2009-12-22 2011-06-23 Samsung Electronics Co., Ltd. Maskless exposure apparatus and multi-head alignment method thereof
US20130044300A1 (en) * 2011-08-15 2013-02-21 Zhongshan Aiscent Technologies, Inc. Double-Sided Maskless Exposure System and Method
KR20160026045A (ko) * 2014-08-29 2016-03-09 주식회사 리텍 복수의 노광엔진을 포함하는 마스크리스 노광장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6652618B2 (ja) 2018-10-11 2020-02-26 株式会社アドテックエンジニアリング 照度割合変更方法及び露光方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004228548A (ja) * 2002-11-29 2004-08-12 Nikon Corp 照明装置、露光装置及び露光方法
JP2007052214A (ja) * 2005-08-17 2007-03-01 Nikon Corp 走査型露光装置及びマイクロデバイスの製造方法
JP2009009127A (ja) * 2007-06-14 2009-01-15 Asml Netherlands Bv テレセントリック性の制御を瞳の充填に使用するリソグラフィ装置及びデバイス製造方法
JP2009105378A (ja) * 2007-08-17 2009-05-14 Asml Holding Nv テレセントリック性のリアルタイム測定
JP2010237420A (ja) * 2009-03-31 2010-10-21 Hitachi Via Mechanics Ltd マスクレス露光装置の光学系補正方法
JP2011007941A (ja) * 2009-06-24 2011-01-13 Fujifilm Corp 露光ヘッド及び露光装置
US20110149297A1 (en) * 2009-12-22 2011-06-23 Samsung Electronics Co., Ltd. Maskless exposure apparatus and multi-head alignment method thereof
US20130044300A1 (en) * 2011-08-15 2013-02-21 Zhongshan Aiscent Technologies, Inc. Double-Sided Maskless Exposure System and Method
KR20160026045A (ko) * 2014-08-29 2016-03-09 주식회사 리텍 복수의 노광엔진을 포함하는 마스크리스 노광장치

Also Published As

Publication number Publication date
US20250383608A1 (en) 2025-12-18
WO2024142602A1 (ja) 2024-07-04
CN120418732A (zh) 2025-08-01
TW202427068A (zh) 2024-07-01
KR20250112838A (ko) 2025-07-24

Similar Documents

Publication Publication Date Title
CL2025003898A1 (es) Estación de conformado de productos huecos de fibra moldeada con elemento expandible y sistema de depósito de fluido
CA3255105A1 (https=)
BR102023014872A2 (https=)
BR102023012440A2 (https=)
BR102023005164A2 (https=)
BR102023001877A2 (https=)
BR202022009269U2 (https=)
BR202022001779U2 (https=)
BR202022000931U2 (https=)
BY13167U (https=)
BY13158U (https=)
CN307046455S (https=)
CN307045794S (https=)
BY23967C1 (https=)
BY23966C1 (https=)
BY23965C1 (https=)
BY23963C1 (https=)
BY13176U (https=)
BY13175U (https=)
BY13174U (https=)
BY13172U (https=)
BY13170U (https=)
BY13169U (https=)
BY13168U (https=)
CN307047592S (https=)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250610

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250610

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20260303