CN120418732A - 曝光装置、器件制造方法及控制方法 - Google Patents

曝光装置、器件制造方法及控制方法

Info

Publication number
CN120418732A
CN120418732A CN202380088561.9A CN202380088561A CN120418732A CN 120418732 A CN120418732 A CN 120418732A CN 202380088561 A CN202380088561 A CN 202380088561A CN 120418732 A CN120418732 A CN 120418732A
Authority
CN
China
Prior art keywords
state
angle
light
pattern
micromirrors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380088561.9A
Other languages
English (en)
Chinese (zh)
Inventor
加藤正纪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN120418732A publication Critical patent/CN120418732A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202380088561.9A 2022-12-26 2023-11-02 曝光装置、器件制造方法及控制方法 Pending CN120418732A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022208554 2022-12-26
JP2022-208554 2022-12-26
PCT/JP2023/039707 WO2024142602A1 (ja) 2022-12-26 2023-11-02 露光装置、デバイス製造方法及び制御方法

Publications (1)

Publication Number Publication Date
CN120418732A true CN120418732A (zh) 2025-08-01

Family

ID=91716947

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380088561.9A Pending CN120418732A (zh) 2022-12-26 2023-11-02 曝光装置、器件制造方法及控制方法

Country Status (6)

Country Link
US (1) US20250383608A1 (https=)
JP (1) JPWO2024142602A1 (https=)
KR (1) KR20250112838A (https=)
CN (1) CN120418732A (https=)
TW (1) TW202427068A (https=)
WO (1) WO2024142602A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004228548A (ja) * 2002-11-29 2004-08-12 Nikon Corp 照明装置、露光装置及び露光方法
JP2007052214A (ja) * 2005-08-17 2007-03-01 Nikon Corp 走査型露光装置及びマイクロデバイスの製造方法
US8692974B2 (en) * 2007-06-14 2014-04-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using pupil filling by telecentricity control
US7999939B2 (en) * 2007-08-17 2011-08-16 Asml Holding N.V. Real time telecentricity measurement
JP5184419B2 (ja) * 2009-03-31 2013-04-17 日立ビアメカニクス株式会社 マスクレス露光装置の光学系補正方法
JP5328512B2 (ja) * 2009-06-24 2013-10-30 富士フイルム株式会社 露光装置
KR20110072440A (ko) * 2009-12-22 2011-06-29 삼성전자주식회사 마스크리스 노광 장치 및 그 멀티 헤드의 교정 방법
CN202615113U (zh) * 2011-08-15 2012-12-19 中山新诺科技有限公司 曝光系统、校准系统和光学引擎
KR101638342B1 (ko) * 2014-08-29 2016-07-12 주식회사 리텍 복수의 노광엔진을 포함하는 마스크리스 노광장치
JP6652618B2 (ja) 2018-10-11 2020-02-26 株式会社アドテックエンジニアリング 照度割合変更方法及び露光方法

Also Published As

Publication number Publication date
US20250383608A1 (en) 2025-12-18
WO2024142602A1 (ja) 2024-07-04
TW202427068A (zh) 2024-07-01
JPWO2024142602A1 (https=) 2024-07-04
KR20250112838A (ko) 2025-07-24

Similar Documents

Publication Publication Date Title
US9946162B2 (en) Controller for optical device, exposure method and apparatus, and method for manufacturing device
JP4875045B2 (ja) リソグラフィ装置および方法
JP7743866B2 (ja) パターン露光装置、露光方法、及びデバイス製造方法
CN120418732A (zh) 曝光装置、器件制造方法及控制方法
TW202309676A (zh) 圖案曝光裝置、元件製造方法、以及曝光裝置
US20240126178A1 (en) Exposure apparatus, control method, and device manufacturing method
US20240345486A1 (en) Exposure device
US20250306470A1 (en) Pattern exposure device and device manufacturing method
US20240110844A1 (en) Exposure apparatus and inspection method
KR20240014514A (ko) 노광 장치 및 디바이스 제조 방법
WO2026014337A1 (ja) 方法、調整方法、及び露光装置
JP2025045864A (ja) 露光装置および露光方法
TW202505314A (zh) 空間光調變單元及曝光裝置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination