JPWO2024135784A1 - - Google Patents

Info

Publication number
JPWO2024135784A1
JPWO2024135784A1 JP2024566137A JP2024566137A JPWO2024135784A1 JP WO2024135784 A1 JPWO2024135784 A1 JP WO2024135784A1 JP 2024566137 A JP2024566137 A JP 2024566137A JP 2024566137 A JP2024566137 A JP 2024566137A JP WO2024135784 A1 JPWO2024135784 A1 JP WO2024135784A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024566137A
Other languages
Japanese (ja)
Other versions
JPWO2024135784A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024135784A1 publication Critical patent/JPWO2024135784A1/ja
Publication of JPWO2024135784A5 publication Critical patent/JPWO2024135784A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
JP2024566137A 2022-12-21 2023-12-21 Pending JPWO2024135784A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022204799 2022-12-21
PCT/JP2023/045975 WO2024135784A1 (ja) 2022-12-21 2023-12-21 窒化物半導体発光素子

Publications (2)

Publication Number Publication Date
JPWO2024135784A1 true JPWO2024135784A1 (https=) 2024-06-27
JPWO2024135784A5 JPWO2024135784A5 (https=) 2025-08-26

Family

ID=91588811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024566137A Pending JPWO2024135784A1 (https=) 2022-12-21 2023-12-21

Country Status (3)

Country Link
JP (1) JPWO2024135784A1 (https=)
CN (1) CN120391102A (https=)
WO (1) WO2024135784A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017078368A1 (ko) * 2015-11-05 2017-05-11 서울바이오시스주식회사 자외선 발광 소자 및 그것을 제조하는 방법
CN110214380B (zh) * 2017-01-25 2024-04-09 苏州立琻半导体有限公司 半导体器件
JPWO2022220088A1 (https=) * 2021-04-14 2022-10-20
JP7594974B2 (ja) * 2021-05-20 2024-12-05 Tdk株式会社 半導体素子およびその製造方法

Also Published As

Publication number Publication date
WO2024135784A1 (ja) 2024-06-27
CN120391102A (zh) 2025-07-29

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