JPWO2022220088A1 - - Google Patents

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Publication number
JPWO2022220088A1
JPWO2022220088A1 JP2023514568A JP2023514568A JPWO2022220088A1 JP WO2022220088 A1 JPWO2022220088 A1 JP WO2022220088A1 JP 2023514568 A JP2023514568 A JP 2023514568A JP 2023514568 A JP2023514568 A JP 2023514568A JP WO2022220088 A1 JPWO2022220088 A1 JP WO2022220088A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023514568A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022220088A1 publication Critical patent/JPWO2022220088A1/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18347—Mesa comprising active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18352—Mesa with inclined sidewall
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2023514568A 2021-04-14 2022-03-28 Pending JPWO2022220088A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021068166 2021-04-14
PCT/JP2022/015107 WO2022220088A1 (ja) 2021-04-14 2022-03-28 面発光レーザ装置

Publications (1)

Publication Number Publication Date
JPWO2022220088A1 true JPWO2022220088A1 (https=) 2022-10-20

Family

ID=83640599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023514568A Pending JPWO2022220088A1 (https=) 2021-04-14 2022-03-28

Country Status (3)

Country Link
US (1) US20240006854A1 (https=)
JP (1) JPWO2022220088A1 (https=)
WO (1) WO2022220088A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024135784A1 (https=) * 2022-12-21 2024-06-27
EP4716038A1 (en) * 2023-05-19 2026-03-25 Sony Semiconductor Solutions Corporation Surface light-emitting element
TWI880291B (zh) * 2023-08-08 2025-04-11 台亞半導體股份有限公司 用於快速測試之垂直腔表面發射雷射晶片結構及形成其之方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070025408A1 (en) * 2005-07-29 2007-02-01 Koelle Bernhard U Long-wavelength VCSEL system with implant current confinement
US20070025407A1 (en) * 2005-07-29 2007-02-01 Koelle Bernhard U Long-wavelength VCSEL system with heat sink
JP2007258600A (ja) * 2006-03-24 2007-10-04 Furukawa Electric Co Ltd:The 面発光レーザ素子および面発光レーザ素子の製造方法
JP2009188238A (ja) * 2008-02-07 2009-08-20 Nec Corp 面発光レーザ及びその製造方法
JP2012049292A (ja) * 2010-08-26 2012-03-08 Panasonic Corp 面発光型半導体レーザ素子及びその製造方法
JP2013191784A (ja) * 2012-03-15 2013-09-26 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
US9705284B1 (en) * 2014-12-04 2017-07-11 Ii-Vi Optoelectronic Devices, Inc. VCSEL with at least one through substrate via
JP2018113360A (ja) * 2017-01-12 2018-07-19 ローム株式会社 面発光レーザ素子、光学装置
JP2019153779A (ja) * 2018-03-01 2019-09-12 株式会社リコー 反射鏡、面発光レーザ、反射鏡の製造方法及び面発光レーザの製造方法
US20190305518A1 (en) * 2018-03-29 2019-10-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Vcsel laser diode having a carrier confinement layer and method of fabrication of the same
US20190319429A1 (en) * 2018-04-13 2019-10-17 Nikolay Ledentsov Micropillar optoelectronic device
US20200303904A1 (en) * 2019-03-20 2020-09-24 Seoul Viosys Co., Ltd. Vertical-cavity surface-emitting laser device
JP2021048208A (ja) * 2019-09-18 2021-03-25 株式会社リコー 面発光レーザ、面発光レーザ装置、光源装置及び検出装置

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070025408A1 (en) * 2005-07-29 2007-02-01 Koelle Bernhard U Long-wavelength VCSEL system with implant current confinement
US20070025407A1 (en) * 2005-07-29 2007-02-01 Koelle Bernhard U Long-wavelength VCSEL system with heat sink
JP2007258600A (ja) * 2006-03-24 2007-10-04 Furukawa Electric Co Ltd:The 面発光レーザ素子および面発光レーザ素子の製造方法
JP2009188238A (ja) * 2008-02-07 2009-08-20 Nec Corp 面発光レーザ及びその製造方法
JP2012049292A (ja) * 2010-08-26 2012-03-08 Panasonic Corp 面発光型半導体レーザ素子及びその製造方法
JP2013191784A (ja) * 2012-03-15 2013-09-26 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
US9705284B1 (en) * 2014-12-04 2017-07-11 Ii-Vi Optoelectronic Devices, Inc. VCSEL with at least one through substrate via
JP2018113360A (ja) * 2017-01-12 2018-07-19 ローム株式会社 面発光レーザ素子、光学装置
JP2019153779A (ja) * 2018-03-01 2019-09-12 株式会社リコー 反射鏡、面発光レーザ、反射鏡の製造方法及び面発光レーザの製造方法
US20190305518A1 (en) * 2018-03-29 2019-10-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Vcsel laser diode having a carrier confinement layer and method of fabrication of the same
US20190319429A1 (en) * 2018-04-13 2019-10-17 Nikolay Ledentsov Micropillar optoelectronic device
US20200303904A1 (en) * 2019-03-20 2020-09-24 Seoul Viosys Co., Ltd. Vertical-cavity surface-emitting laser device
JP2021048208A (ja) * 2019-09-18 2021-03-25 株式会社リコー 面発光レーザ、面発光レーザ装置、光源装置及び検出装置

Also Published As

Publication number Publication date
WO2022220088A1 (ja) 2022-10-20
US20240006854A1 (en) 2024-01-04

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