CN120391102A - 氮化物半导体发光元件 - Google Patents

氮化物半导体发光元件

Info

Publication number
CN120391102A
CN120391102A CN202380086725.4A CN202380086725A CN120391102A CN 120391102 A CN120391102 A CN 120391102A CN 202380086725 A CN202380086725 A CN 202380086725A CN 120391102 A CN120391102 A CN 120391102A
Authority
CN
China
Prior art keywords
electrode
mesa structure
nitride semiconductor
region
electrode region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380086725.4A
Other languages
English (en)
Chinese (zh)
Inventor
横山彩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Original Assignee
Asahi Kasei Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Corp filed Critical Asahi Kasei Corp
Publication of CN120391102A publication Critical patent/CN120391102A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Led Devices (AREA)
CN202380086725.4A 2022-12-21 2023-12-21 氮化物半导体发光元件 Pending CN120391102A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-204799 2022-12-21
JP2022204799 2022-12-21
PCT/JP2023/045975 WO2024135784A1 (ja) 2022-12-21 2023-12-21 窒化物半導体発光素子

Publications (1)

Publication Number Publication Date
CN120391102A true CN120391102A (zh) 2025-07-29

Family

ID=91588811

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380086725.4A Pending CN120391102A (zh) 2022-12-21 2023-12-21 氮化物半导体发光元件

Country Status (3)

Country Link
JP (1) JPWO2024135784A1 (https=)
CN (1) CN120391102A (https=)
WO (1) WO2024135784A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017078368A1 (ko) * 2015-11-05 2017-05-11 서울바이오시스주식회사 자외선 발광 소자 및 그것을 제조하는 방법
CN110214380B (zh) * 2017-01-25 2024-04-09 苏州立琻半导体有限公司 半导体器件
JPWO2022220088A1 (https=) * 2021-04-14 2022-10-20
JP7594974B2 (ja) * 2021-05-20 2024-12-05 Tdk株式会社 半導体素子およびその製造方法

Also Published As

Publication number Publication date
WO2024135784A1 (ja) 2024-06-27
JPWO2024135784A1 (https=) 2024-06-27

Similar Documents

Publication Publication Date Title
US8513687B2 (en) Semiconductor light emitting device and semiconductor light emitting apparatus
US7902565B2 (en) Semiconductor light emitting device and method for manufacturing same
US11387386B2 (en) Semiconductor light emitting element and method of manufacturing semiconductor light emitting element
US20070254394A1 (en) Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same
JP7146589B2 (ja) 半導体発光素子および半導体発光素子の製造方法
KR20110052131A (ko) 발광소자 및 그 제조방법
CN102067334A (zh) 半导体发光器件
JP7146562B2 (ja) 半導体発光素子および半導体発光素子の製造方法
US7259447B2 (en) Flip-chip type nitride semiconductor light emitting diode
US8759815B2 (en) Nitride based semiconductor light emitting device
US20230231077A1 (en) Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element
JP7323783B2 (ja) 発光装置の製造方法及び発光装置
US8101965B2 (en) III-nitride semiconductor light emitting device having a multilayered pad
JP7296001B2 (ja) 半導体発光素子および半導体発光素子の製造方法
CN120391102A (zh) 氮化物半导体发光元件
KR100960280B1 (ko) 3족 질화물 반도체 발광소자
JP6948494B2 (ja) 紫外線発光素子及び発光素子パッケージ
TW202332082A (zh) 半導體發光元件以及半導體發光元件的製造方法
KR101420789B1 (ko) 반도체 발광소자
KR101420788B1 (ko) 반도체 발광소자
JP7296002B2 (ja) 半導体発光素子および半導体発光素子の製造方法
CN100479210C (zh) 具有载子提供层的多重量子井氮化物发光二极管
US20240178344A1 (en) Ultraviolet light emitting element
KR100985720B1 (ko) 발광소자 패키지의 제조 방법
KR20110078632A (ko) 반도체 발광소자

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination