JPWO2024038504A1 - - Google Patents
Info
- Publication number
- JPWO2024038504A1 JPWO2024038504A1 JP2024541314A JP2024541314A JPWO2024038504A1 JP WO2024038504 A1 JPWO2024038504 A1 JP WO2024038504A1 JP 2024541314 A JP2024541314 A JP 2024541314A JP 2024541314 A JP2024541314 A JP 2024541314A JP WO2024038504 A1 JPWO2024038504 A1 JP WO2024038504A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/030967 WO2024038504A1 (ja) | 2022-08-16 | 2022-08-16 | 炭化珪素半導体装置、電力変換装置および炭化珪素半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024038504A1 true JPWO2024038504A1 (https=) | 2024-02-22 |
| JPWO2024038504A5 JPWO2024038504A5 (https=) | 2024-10-18 |
Family
ID=89941535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024541314A Ceased JPWO2024038504A1 (https=) | 2022-08-16 | 2022-08-16 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024038504A1 (https=) |
| WO (1) | WO2024038504A1 (https=) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010109221A (ja) * | 2008-10-31 | 2010-05-13 | Rohm Co Ltd | 半導体装置 |
| JP2013089778A (ja) * | 2011-10-18 | 2013-05-13 | Toyota Motor Corp | 半導体装置及びその製造方法 |
| JP2016009712A (ja) * | 2014-06-23 | 2016-01-18 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| CN206657811U (zh) * | 2017-04-06 | 2017-11-21 | 淄博汉林半导体有限公司 | 一种内建肖特基界面的垂直场效应二极管 |
| CN109192779A (zh) * | 2018-08-28 | 2019-01-11 | 电子科技大学 | 一种碳化硅mosfet器件及其制造方法 |
| JP2019071313A (ja) * | 2017-10-05 | 2019-05-09 | 国立研究開発法人産業技術総合研究所 | 半導体装置 |
| JP2020087958A (ja) * | 2018-11-15 | 2020-06-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| CN212542447U (zh) * | 2020-07-24 | 2021-02-12 | 淄博汉林半导体有限公司 | 一种新型立体导电的肖特基二极管 |
-
2022
- 2022-08-16 JP JP2024541314A patent/JPWO2024038504A1/ja not_active Ceased
- 2022-08-16 WO PCT/JP2022/030967 patent/WO2024038504A1/ja not_active Ceased
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010109221A (ja) * | 2008-10-31 | 2010-05-13 | Rohm Co Ltd | 半導体装置 |
| JP2013089778A (ja) * | 2011-10-18 | 2013-05-13 | Toyota Motor Corp | 半導体装置及びその製造方法 |
| JP2016009712A (ja) * | 2014-06-23 | 2016-01-18 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| CN206657811U (zh) * | 2017-04-06 | 2017-11-21 | 淄博汉林半导体有限公司 | 一种内建肖特基界面的垂直场效应二极管 |
| JP2019071313A (ja) * | 2017-10-05 | 2019-05-09 | 国立研究開発法人産業技術総合研究所 | 半導体装置 |
| CN109192779A (zh) * | 2018-08-28 | 2019-01-11 | 电子科技大学 | 一种碳化硅mosfet器件及其制造方法 |
| JP2020087958A (ja) * | 2018-11-15 | 2020-06-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| CN212542447U (zh) * | 2020-07-24 | 2021-02-12 | 淄博汉林半导体有限公司 | 一种新型立体导电的肖特基二极管 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024038504A1 (ja) | 2024-02-22 |
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