JPWO2023248949A1 - - Google Patents

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Publication number
JPWO2023248949A1
JPWO2023248949A1 JP2024506849A JP2024506849A JPWO2023248949A1 JP WO2023248949 A1 JPWO2023248949 A1 JP WO2023248949A1 JP 2024506849 A JP2024506849 A JP 2024506849A JP 2024506849 A JP2024506849 A JP 2024506849A JP WO2023248949 A1 JPWO2023248949 A1 JP WO2023248949A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024506849A
Other languages
Japanese (ja)
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JPWO2023248949A5 (https=
JP7582551B2 (ja
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=89379907&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPWO2023248949(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Publication of JPWO2023248949A1 publication Critical patent/JPWO2023248949A1/ja
Publication of JPWO2023248949A5 publication Critical patent/JPWO2023248949A5/ja
Priority to JP2024190577A priority Critical patent/JP2025020248A/ja
Application granted granted Critical
Publication of JP7582551B2 publication Critical patent/JP7582551B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C01B33/181—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
    • C01B33/183—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process by oxidation or hydrolysis in the vapour phase of silicon compounds such as halides, trichlorosilane, monosilane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/145—Preparation of hydroorganosols, organosols or dispersions in an organic medium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/14—Pore volume
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/16—Pore diameter
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Silicon Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2024506849A 2022-06-20 2023-06-16 シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法 Active JP7582551B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024190577A JP2025020248A (ja) 2022-06-20 2024-10-30 シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022099054 2022-06-20
JP2022099054 2022-06-20
PCT/JP2023/022443 WO2023248949A1 (ja) 2022-06-20 2023-06-16 シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024190577A Division JP2025020248A (ja) 2022-06-20 2024-10-30 シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JPWO2023248949A1 true JPWO2023248949A1 (https=) 2023-12-28
JPWO2023248949A5 JPWO2023248949A5 (https=) 2024-05-28
JP7582551B2 JP7582551B2 (ja) 2024-11-13

Family

ID=89379907

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2024506849A Active JP7582551B2 (ja) 2022-06-20 2023-06-16 シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP2024190577A Pending JP2025020248A (ja) 2022-06-20 2024-10-30 シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024190577A Pending JP2025020248A (ja) 2022-06-20 2024-10-30 シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Country Status (7)

Country Link
US (1) US20250197229A1 (https=)
EP (1) EP4541767A4 (https=)
JP (2) JP7582551B2 (https=)
KR (1) KR20250024936A (https=)
CN (1) CN119585204A (https=)
TW (1) TW202408931A (https=)
WO (1) WO2023248949A1 (https=)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897549A (en) * 1988-12-19 1990-01-30 Zerda Tadeusz W Method of measuring pore diameters by positronium decay
JP2000208451A (ja) * 1999-01-11 2000-07-28 Tokuyama Corp 研磨剤および研磨方法
JP2009215088A (ja) * 2008-03-07 2009-09-24 Nihon Yamamura Glass Co Ltd 球状シリカガラス微粒子及びその製法
WO2015087965A1 (ja) * 2013-12-12 2015-06-18 日産化学工業株式会社 シリカ粒子及びその製造方法並びにシリカゾル
JP2018167999A (ja) * 2017-03-29 2018-11-01 文修 斎藤 多孔質焼結体および空気浄化装置
WO2019131874A1 (ja) * 2017-12-27 2019-07-04 日揮触媒化成株式会社 鎖状粒子分散液の製造方法および鎖状粒子の分散液
WO2021153502A1 (ja) * 2020-01-28 2021-08-05 三菱ケミカル株式会社 シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP2021116225A (ja) * 2020-01-28 2021-08-10 三菱ケミカル株式会社 シリカ粒子の製造方法、シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP2021147267A (ja) * 2020-03-18 2021-09-27 三菱ケミカル株式会社 シリカ粒子の製造方法、シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3195569B2 (ja) 1997-08-11 2001-08-06 守 磯 繭型コロイダルシリカの製造方法
JP7206695B2 (ja) 2017-11-10 2023-01-18 三菱ケミカル株式会社 シリカゾル、研磨組成物、シリコンウェーハの研磨方法、シリコンウェーハの製造方法、化学的機械的研磨組成物及び半導体デバイスの製造方法
JP2022099054A (ja) 2020-12-22 2022-07-04 富士電機株式会社 自動販売機システムおよび管理サーバ

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897549A (en) * 1988-12-19 1990-01-30 Zerda Tadeusz W Method of measuring pore diameters by positronium decay
JP2000208451A (ja) * 1999-01-11 2000-07-28 Tokuyama Corp 研磨剤および研磨方法
JP2009215088A (ja) * 2008-03-07 2009-09-24 Nihon Yamamura Glass Co Ltd 球状シリカガラス微粒子及びその製法
WO2015087965A1 (ja) * 2013-12-12 2015-06-18 日産化学工業株式会社 シリカ粒子及びその製造方法並びにシリカゾル
JP2018167999A (ja) * 2017-03-29 2018-11-01 文修 斎藤 多孔質焼結体および空気浄化装置
WO2019131874A1 (ja) * 2017-12-27 2019-07-04 日揮触媒化成株式会社 鎖状粒子分散液の製造方法および鎖状粒子の分散液
WO2021153502A1 (ja) * 2020-01-28 2021-08-05 三菱ケミカル株式会社 シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP2021116225A (ja) * 2020-01-28 2021-08-10 三菱ケミカル株式会社 シリカ粒子の製造方法、シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP2021147267A (ja) * 2020-03-18 2021-09-27 三菱ケミカル株式会社 シリカ粒子の製造方法、シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DUTTA, D.: ""Pore structure of silica gel: a comparative study through BET and PALS"", CHEMICAL PHYSICS, vol. Vol. 312，No. 1-3, JPN6023033743, June 2005 (2005-06-01), pages 319 - 324, ISSN: 0005319188 *
KAJCSOS, ZS.: ""On the peculiarities of positron annihilation features in silicalite-1 and Y-zeolites"", RADIATION PHYSICS AND CHEMISTRY, vol. Vol. 58，No. 5-6, JPN6023033744, June 2000 (2000-06-01), pages 709 - 714, ISSN: 0005319187 *

Also Published As

Publication number Publication date
EP4541767A4 (en) 2026-02-18
CN119585204A (zh) 2025-03-07
TW202408931A (zh) 2024-03-01
KR20250024936A (ko) 2025-02-20
JP2025020248A (ja) 2025-02-12
EP4541767A1 (en) 2025-04-23
US20250197229A1 (en) 2025-06-19
JP7582551B2 (ja) 2024-11-13
WO2023248949A1 (ja) 2023-12-28

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