JPWO2023233589A1 - - Google Patents

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Publication number
JPWO2023233589A1
JPWO2023233589A1 JP2024524078A JP2024524078A JPWO2023233589A1 JP WO2023233589 A1 JPWO2023233589 A1 JP WO2023233589A1 JP 2024524078 A JP2024524078 A JP 2024524078A JP 2024524078 A JP2024524078 A JP 2024524078A JP WO2023233589 A1 JPWO2023233589 A1 JP WO2023233589A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024524078A
Other languages
Japanese (ja)
Other versions
JPWO2023233589A5 (https=
JP7635886B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023233589A1 publication Critical patent/JPWO2023233589A1/ja
Publication of JPWO2023233589A5 publication Critical patent/JPWO2023233589A5/ja
Application granted granted Critical
Publication of JP7635886B2 publication Critical patent/JP7635886B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2024524078A 2022-06-01 2022-06-01 半導体レーザ光源装置 Active JP7635886B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/022332 WO2023233589A1 (ja) 2022-06-01 2022-06-01 半導体レーザ光源装置

Publications (3)

Publication Number Publication Date
JPWO2023233589A1 true JPWO2023233589A1 (https=) 2023-12-07
JPWO2023233589A5 JPWO2023233589A5 (https=) 2024-08-02
JP7635886B2 JP7635886B2 (ja) 2025-02-26

Family

ID=89026083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024524078A Active JP7635886B2 (ja) 2022-06-01 2022-06-01 半導体レーザ光源装置

Country Status (5)

Country Link
US (1) US20250096524A1 (https=)
JP (1) JP7635886B2 (https=)
CN (1) CN119213643A (https=)
TW (1) TWI863260B (https=)
WO (1) WO2023233589A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117178445A (zh) * 2021-04-27 2023-12-05 三菱电机株式会社 半导体激光光源装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146777A (ja) * 2002-08-26 2004-05-20 Sumitomo Electric Ind Ltd 半導体レーザモジュールおよび半導体レーザ装置
JP2006030227A (ja) * 2004-07-12 2006-02-02 Opnext Japan Inc 光モジュール
JP2011108937A (ja) * 2009-11-19 2011-06-02 Nippon Telegr & Teleph Corp <Ntt> Ｔｏ−ｃａｎ型ｔｏｓａモジュール
WO2019229825A1 (ja) * 2018-05-29 2019-12-05 三菱電機株式会社 光モジュール、および光送信器
JP2021077858A (ja) * 2019-11-01 2021-05-20 ＣＩＧ Ｐｈｏｔｏｎｉｃｓ Ｊａｐａｎ株式会社 光サブアッセンブリ
JP6984801B1 (ja) * 2021-04-27 2021-12-22 三菱電機株式会社 半導体レーザ光源装置
JP7020590B1 (ja) * 2020-12-08 2022-02-16 三菱電機株式会社 レーザ光源装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7382872B2 (ja) * 2020-03-24 2023-11-17 新光電気工業株式会社 半導体パッケージ用ステム、半導体パッケージ

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146777A (ja) * 2002-08-26 2004-05-20 Sumitomo Electric Ind Ltd 半導体レーザモジュールおよび半導体レーザ装置
JP2006030227A (ja) * 2004-07-12 2006-02-02 Opnext Japan Inc 光モジュール
JP2011108937A (ja) * 2009-11-19 2011-06-02 Nippon Telegr & Teleph Corp <Ntt> Ｔｏ−ｃａｎ型ｔｏｓａモジュール
WO2019229825A1 (ja) * 2018-05-29 2019-12-05 三菱電機株式会社 光モジュール、および光送信器
JP2021077858A (ja) * 2019-11-01 2021-05-20 ＣＩＧ Ｐｈｏｔｏｎｉｃｓ Ｊａｐａｎ株式会社 光サブアッセンブリ
JP7020590B1 (ja) * 2020-12-08 2022-02-16 三菱電機株式会社 レーザ光源装置
JP6984801B1 (ja) * 2021-04-27 2021-12-22 三菱電機株式会社 半導体レーザ光源装置

Also Published As

Publication number Publication date
JP7635886B2 (ja) 2025-02-26
US20250096524A1 (en) 2025-03-20
TW202349809A (zh) 2023-12-16
WO2023233589A1 (ja) 2023-12-07
TWI863260B (zh) 2024-11-21
CN119213643A (zh) 2024-12-27

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