JPWO2023166545A5 - - Google Patents

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JPWO2023166545A5
JPWO2023166545A5 JP2022549633A JP2022549633A JPWO2023166545A5 JP WO2023166545 A5 JPWO2023166545 A5 JP WO2023166545A5 JP 2022549633 A JP2022549633 A JP 2022549633A JP 2022549633 A JP2022549633 A JP 2022549633A JP WO2023166545 A5 JPWO2023166545 A5 JP WO2023166545A5
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JP
Japan
Prior art keywords
surface electrode
insulating film
semiconductor device
openings
semiconductor
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JP2022549633A
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English (en)
Japanese (ja)
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JPWO2023166545A1 (https=
JP7278498B1 (ja
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Priority claimed from PCT/JP2022/008507 external-priority patent/WO2023166545A1/ja
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Publication of JP7278498B1 publication Critical patent/JP7278498B1/ja
Publication of JPWO2023166545A1 publication Critical patent/JPWO2023166545A1/ja
Publication of JPWO2023166545A5 publication Critical patent/JPWO2023166545A5/ja
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JP2022549633A 2022-03-01 2022-03-01 半導体素子及び半導体素子の製造方法 Active JP7278498B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/008507 WO2023166545A1 (ja) 2022-03-01 2022-03-01 半導体素子及び半導体素子の製造方法

Publications (3)

Publication Number Publication Date
JP7278498B1 JP7278498B1 (ja) 2023-05-19
JPWO2023166545A1 JPWO2023166545A1 (https=) 2023-09-07
JPWO2023166545A5 true JPWO2023166545A5 (https=) 2024-02-06

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ID=86382589

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JP2022549633A Active JP7278498B1 (ja) 2022-03-01 2022-03-01 半導体素子及び半導体素子の製造方法

Country Status (4)

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US (1) US20250056943A1 (https=)
JP (1) JP7278498B1 (https=)
CN (1) CN118715602A (https=)
WO (1) WO2023166545A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63177435A (ja) * 1987-01-17 1988-07-21 Mitsubishi Electric Corp 半導体素子の電極構造
JPH02181987A (ja) * 1989-01-06 1990-07-16 Nec Corp 半導体レーザ
JP2007266575A (ja) * 2006-02-28 2007-10-11 Sanyo Electric Co Ltd 半導体レーザ素子及び半導体レーザ装置
KR100764055B1 (ko) * 2006-09-07 2007-10-08 삼성전자주식회사 웨이퍼 레벨 칩 스케일 패키지 및 칩 스케일 패키지의 제조방법
JP2008140973A (ja) * 2006-12-01 2008-06-19 Matsushita Electric Ind Co Ltd 半導体集積回路
JP2010225654A (ja) * 2009-03-19 2010-10-07 Toyota Central R&D Labs Inc 半導体装置
JP6371609B2 (ja) * 2014-07-04 2018-08-08 日本オクラロ株式会社 半導体発光素子

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