JPWO2023080092A1 - - Google Patents
Info
- Publication number
- JPWO2023080092A1 JPWO2023080092A1 JP2023558017A JP2023558017A JPWO2023080092A1 JP WO2023080092 A1 JPWO2023080092 A1 JP WO2023080092A1 JP 2023558017 A JP2023558017 A JP 2023558017A JP 2023558017 A JP2023558017 A JP 2023558017A JP WO2023080092 A1 JPWO2023080092 A1 JP WO2023080092A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/695—Organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/128—Anode regions of diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/129—Cathode regions of diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021181323 | 2021-11-05 | ||
| PCT/JP2022/040504 WO2023080092A1 (ja) | 2021-11-05 | 2022-10-28 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023080092A1 true JPWO2023080092A1 (https=) | 2023-05-11 |
| JPWO2023080092A5 JPWO2023080092A5 (https=) | 2024-07-23 |
Family
ID=86241149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023558017A Pending JPWO2023080092A1 (https=) | 2021-11-05 | 2022-10-28 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240274481A1 (https=) |
| JP (1) | JPWO2023080092A1 (https=) |
| CN (1) | CN118176576A (https=) |
| DE (1) | DE112022004779T5 (https=) |
| WO (1) | WO2023080092A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026004740A1 (ja) * | 2024-06-27 | 2026-01-02 | ローム株式会社 | 半導体装置および半導体モジュール |
| CN119486211B (zh) * | 2025-01-13 | 2025-05-13 | 长飞先进半导体(武汉)有限公司 | 半导体器件及制备方法、功率模块、功率转换电路和车辆 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4386239B2 (ja) * | 2003-03-12 | 2009-12-16 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| JP7038518B2 (ja) * | 2017-10-11 | 2022-03-18 | ローム株式会社 | 半導体装置 |
| JP7530202B2 (ja) * | 2019-05-23 | 2024-08-07 | ローム株式会社 | 半導体装置 |
| JP2020202313A (ja) * | 2019-06-11 | 2020-12-17 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2021181323A (ja) | 2020-05-19 | 2021-11-25 | 株式会社古川製作所 | 粉体充填ホッパ及びその粉体充填ホッパの制御方法 |
-
2022
- 2022-10-28 CN CN202280072992.1A patent/CN118176576A/zh active Pending
- 2022-10-28 DE DE112022004779.8T patent/DE112022004779T5/de active Pending
- 2022-10-28 JP JP2023558017A patent/JPWO2023080092A1/ja active Pending
- 2022-10-28 WO PCT/JP2022/040504 patent/WO2023080092A1/ja not_active Ceased
-
2024
- 2024-04-29 US US18/648,686 patent/US20240274481A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023080092A1 (ja) | 2023-05-11 |
| DE112022004779T5 (de) | 2024-09-05 |
| US20240274481A1 (en) | 2024-08-15 |
| CN118176576A (zh) | 2024-06-11 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240219 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20251021 |