CN118176576A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN118176576A
CN118176576A CN202280072992.1A CN202280072992A CN118176576A CN 118176576 A CN118176576 A CN 118176576A CN 202280072992 A CN202280072992 A CN 202280072992A CN 118176576 A CN118176576 A CN 118176576A
Authority
CN
China
Prior art keywords
main surface
electrode
semiconductor device
insulating film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280072992.1A
Other languages
English (en)
Chinese (zh)
Inventor
中野佑纪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN118176576A publication Critical patent/CN118176576A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/695—Organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/128—Anode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN202280072992.1A 2021-11-05 2022-10-28 半导体装置 Pending CN118176576A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-181323 2021-11-05
JP2021181323 2021-11-05
PCT/JP2022/040504 WO2023080092A1 (ja) 2021-11-05 2022-10-28 半導体装置

Publications (1)

Publication Number Publication Date
CN118176576A true CN118176576A (zh) 2024-06-11

Family

ID=86241149

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280072992.1A Pending CN118176576A (zh) 2021-11-05 2022-10-28 半导体装置

Country Status (5)

Country Link
US (1) US20240274481A1 (https=)
JP (1) JPWO2023080092A1 (https=)
CN (1) CN118176576A (https=)
DE (1) DE112022004779T5 (https=)
WO (1) WO2023080092A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026004740A1 (ja) * 2024-06-27 2026-01-02 ローム株式会社 半導体装置および半導体モジュール
CN119486211B (zh) * 2025-01-13 2025-05-13 长飞先进半导体(武汉)有限公司 半导体器件及制备方法、功率模块、功率转换电路和车辆

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4386239B2 (ja) * 2003-03-12 2009-12-16 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP7038518B2 (ja) * 2017-10-11 2022-03-18 ローム株式会社 半導体装置
JP7530202B2 (ja) * 2019-05-23 2024-08-07 ローム株式会社 半導体装置
JP2020202313A (ja) * 2019-06-11 2020-12-17 ローム株式会社 半導体装置および半導体装置の製造方法
JP2021181323A (ja) 2020-05-19 2021-11-25 株式会社古川製作所 粉体充填ホッパ及びその粉体充填ホッパの制御方法

Also Published As

Publication number Publication date
WO2023080092A1 (ja) 2023-05-11
DE112022004779T5 (de) 2024-09-05
US20240274481A1 (en) 2024-08-15
JPWO2023080092A1 (https=) 2023-05-11

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