JPWO2023063429A1 - - Google Patents

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Publication number
JPWO2023063429A1
JPWO2023063429A1 JP2023554663A JP2023554663A JPWO2023063429A1 JP WO2023063429 A1 JPWO2023063429 A1 JP WO2023063429A1 JP 2023554663 A JP2023554663 A JP 2023554663A JP 2023554663 A JP2023554663 A JP 2023554663A JP WO2023063429 A1 JPWO2023063429 A1 JP WO2023063429A1
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JP
Japan
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JP2023554663A
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Japanese (ja)
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JP7692174B2 (ja
JPWO2023063429A5 (https=
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP2023554663A 2021-10-14 2022-10-14 光電変換材料およびそれを用いた光電変換素子 Active JP7692174B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021169163 2021-10-14
JP2021169163 2021-10-14
PCT/JP2022/038486 WO2023063429A1 (ja) 2021-10-14 2022-10-14 光電変換材料およびそれを用いた光電変換素子

Publications (3)

Publication Number Publication Date
JPWO2023063429A1 true JPWO2023063429A1 (https=) 2023-04-20
JPWO2023063429A5 JPWO2023063429A5 (https=) 2024-07-18
JP7692174B2 JP7692174B2 (ja) 2025-06-13

Family

ID=85987811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023554663A Active JP7692174B2 (ja) 2021-10-14 2022-10-14 光電変換材料およびそれを用いた光電変換素子

Country Status (5)

Country Link
US (1) US20240260451A1 (https=)
EP (1) EP4418832A4 (https=)
JP (1) JP7692174B2 (https=)
CN (1) CN118104413A (https=)
WO (1) WO2023063429A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016502282A (ja) * 2012-12-20 2016-01-21 イッサム リサーチ ディベロップメント カンパニー オブ ザ ヘブライ ユニバーシティー オブ エルサレム リミテッドＹｉｓｓｕｍ Ｒｅｓｅａｒｃｈ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ Ｏｆ Ｔｈｅ Ｈｅｂｒｅｗ Ｕｎｉｖｅｒｓｔｙ Ｏｆ Ｊｅｒｕｓａｌｅｍ Ｌｔｄ． ペロブスカイトショットキー型太陽電池
CN110246971A (zh) * 2019-06-26 2019-09-17 西南石油大学 基于前氧化空穴传输层的无机钙钛矿太阳能电池及制备方法
WO2019198159A1 (ja) * 2018-04-10 2019-10-17 花王株式会社 光吸収層、光電変換素子、及び太陽電池
JP2020013982A (ja) * 2018-07-10 2020-01-23 パナソニックＩｐマネジメント株式会社 太陽電池

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020105207A1 (ja) * 2018-11-20 2020-05-28 パナソニックＩｐマネジメント株式会社 太陽電池

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016502282A (ja) * 2012-12-20 2016-01-21 イッサム リサーチ ディベロップメント カンパニー オブ ザ ヘブライ ユニバーシティー オブ エルサレム リミテッドＹｉｓｓｕｍ Ｒｅｓｅａｒｃｈ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ Ｏｆ Ｔｈｅ Ｈｅｂｒｅｗ Ｕｎｉｖｅｒｓｔｙ Ｏｆ Ｊｅｒｕｓａｌｅｍ Ｌｔｄ． ペロブスカイトショットキー型太陽電池
WO2019198159A1 (ja) * 2018-04-10 2019-10-17 花王株式会社 光吸収層、光電変換素子、及び太陽電池
JP2020013982A (ja) * 2018-07-10 2020-01-23 パナソニックＩｐマネジメント株式会社 太陽電池
CN110246971A (zh) * 2019-06-26 2019-09-17 西南石油大学 基于前氧化空穴传输层的无机钙钛矿太阳能电池及制备方法

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
CAO, H. ET AL.: "The effect of defects in tin-based perovskites and their photovoltaic devices", MATERIALS TODAY PHYSICS, vol. Vol. 21, Article number: 100513, JPN6022051831, 2 September 2021 (2021-09-02), pages 1 - 16, ISSN: 0005508045 *
CHEN, LIN-JER ET AL.: "Synthesis and Optical Properties of Lead-Free Cesium Tin Halide Perovskite Quantum Rods with High-Pe", THE JOURNAL OF PHYSICAL CHEMISTRY LETTERS, vol. 7, JPN6022051833, 2016, pages 5028 - 5035, ISSN: 0005508042 *
KUMAR, MULMUDI HEMANT ET AL.: "Lead-Free Halide Perovskite Solar Cells with High Photocurrents Realized Through Vacancy Modulation", ADVANCED MATERIALS, vol. 26, JPN6025016870, 11 September 2014 (2014-09-11), pages 7122 - 7127, ISSN: 0005584129 *
MARSHALL, K. P. ET AL.: "Enhanced stability and efficiency in hole-transport-layer-free CsSnI3 perovskite photovoltaics", NATURE ENERGY, vol. Vol. 1，Article number: 16178, JPN6025000907, 2016, pages 1 - 9, ISSN: 0005508047 *
PEEDIKAKKANDY, LEKHA AND BHARGAVA, PARAG: "Composition dependent optical, structural and photoluminescence characteristics of cesium tin halide", RSC ADVANCES, vol. 6, JPN6022051830, 2016, pages 19857 - 19860, ISSN: 0005508046 *
SABBA, DHARANI ET AL.: "Impact of Anionic Br- Substitution on Open Circuit Voltage in Lead Free Perovskite (CsSnI3-xBrx) Sol", THE JOURNAL OF PHYSICAL CHEMISTRY C, vol. 119, JPN6025000908, 2015, pages 1763 - 1767, ISSN: 0005508040 *
SONG, TZE-BIN ET AL.: "Performance Enhancement of Lead-Free Tin-Based Perovskite Solar Cells with Reducing Atmosphere-Assis", ACS ENERGY LETTERS, vol. 2, JPN6022051835, 2017, pages 897 - 903, ISSN: 0005508043 *
WU, JUNSHENG ET AL.: "Fluorine ion induced phase evolution of tin-based perovskite thin films: structure and properties", RSC ADVANCES, vol. 9, JPN6022051828, 2019, pages 37119 - 37126, ISSN: 0005508044 *
XU, PENG ET AL.: "Influence of Defects and Synthesis Conditions on the Photovoltaic Performance of Perovskite Semicond", CHEMISTRY OF MATERIALS, vol. 26, JPN6022051829, 2014, pages 6068 - 6072, ISSN: 0005508041 *

Also Published As

Publication number Publication date
JP7692174B2 (ja) 2025-06-13
CN118104413A (zh) 2024-05-28
EP4418832A4 (en) 2025-02-19
EP4418832A1 (en) 2024-08-21
WO2023063429A1 (ja) 2023-04-20
US20240260451A1 (en) 2024-08-01

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