JP7692174B2 - 光電変換材料およびそれを用いた光電変換素子 - Google Patents

光電変換材料およびそれを用いた光電変換素子 Download PDF

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JP7692174B2
JP7692174B2 JP2023554663A JP2023554663A JP7692174B2 JP 7692174 B2 JP7692174 B2 JP 7692174B2 JP 2023554663 A JP2023554663 A JP 2023554663A JP 2023554663 A JP2023554663 A JP 2023554663A JP 7692174 B2 JP7692174 B2 JP 7692174B2
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photoelectric conversion
layer
conversion material
electrode
cation
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JPWO2023063429A5 (https=
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紘子 奥村
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP2023554663A 2021-10-14 2022-10-14 光電変換材料およびそれを用いた光電変換素子 Active JP7692174B2 (ja)

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JP2021169163 2021-10-14
JP2021169163 2021-10-14
PCT/JP2022/038486 WO2023063429A1 (ja) 2021-10-14 2022-10-14 光電変換材料およびそれを用いた光電変換素子

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JPWO2023063429A1 JPWO2023063429A1 (https=) 2023-04-20
JPWO2023063429A5 JPWO2023063429A5 (https=) 2024-07-18
JP7692174B2 true JP7692174B2 (ja) 2025-06-13

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US (1) US20240260451A1 (https=)
EP (1) EP4418832A4 (https=)
JP (1) JP7692174B2 (https=)
CN (1) CN118104413A (https=)
WO (1) WO2023063429A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016502282A (ja) 2012-12-20 2016-01-21 イッサム リサーチ ディベロップメント カンパニー オブ ザ ヘブライ ユニバーシティー オブ エルサレム リミテッドＹｉｓｓｕｍ Ｒｅｓｅａｒｃｈ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ Ｏｆ Ｔｈｅ Ｈｅｂｒｅｗ Ｕｎｉｖｅｒｓｔｙ Ｏｆ Ｊｅｒｕｓａｌｅｍ Ｌｔｄ． ペロブスカイトショットキー型太陽電池
CN110246971A (zh) 2019-06-26 2019-09-17 西南石油大学 基于前氧化空穴传输层的无机钙钛矿太阳能电池及制备方法
WO2019198159A1 (ja) 2018-04-10 2019-10-17 花王株式会社 光吸収層、光電変換素子、及び太陽電池
JP2020013982A (ja) 2018-07-10 2020-01-23 パナソニックＩｐマネジメント株式会社 太陽電池

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020105207A1 (ja) * 2018-11-20 2020-05-28 パナソニックＩｐマネジメント株式会社 太陽電池

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016502282A (ja) 2012-12-20 2016-01-21 イッサム リサーチ ディベロップメント カンパニー オブ ザ ヘブライ ユニバーシティー オブ エルサレム リミテッドＹｉｓｓｕｍ Ｒｅｓｅａｒｃｈ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ Ｏｆ Ｔｈｅ Ｈｅｂｒｅｗ Ｕｎｉｖｅｒｓｔｙ Ｏｆ Ｊｅｒｕｓａｌｅｍ Ｌｔｄ． ペロブスカイトショットキー型太陽電池
WO2019198159A1 (ja) 2018-04-10 2019-10-17 花王株式会社 光吸収層、光電変換素子、及び太陽電池
JP2020013982A (ja) 2018-07-10 2020-01-23 パナソニックＩｐマネジメント株式会社 太陽電池
CN110246971A (zh) 2019-06-26 2019-09-17 西南石油大学 基于前氧化空穴传输层的无机钙钛矿太阳能电池及制备方法

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
CAO, H. et al.，The effect of defects in tin-based perovskites and their photovoltaic devices，Materials Today Physics，2021年09月02日，Vol. 21, Article number: 100513，pp. 1-16
CHEN, Lin-Jer et al.，Synthesis and Optical Properties of Lead-Free Cesium Tin Halide Perovskite Quantum Rods with High-Performance Solar Cell Application，The Journal of Physical Chemistry Letters，2016年，Vol. 7，pp. 5028-5035
KUMAR, Mulmudi Hemant et al.，Lead-Free Halide Perovskite Solar Cells with High Photocurrents Realized Through Vacancy Modulation，Advanced Materials，2014年09月11日，Vol. 26，pp. 7122-7127
MARSHALL, K. P. et al.，Enhanced stability and efficiency in hole-transport-layer-free CsSnI3 perovskite photovoltaics，Nature Energy，2016年，Vol. 1，Article number: 16178，pp. 1-9
PEEDIKAKKANDY, Lekha and BHARGAVA, Parag，Composition dependent optical, structural and photoluminescence characteristics of cesium tin halide perovskites，RSC Advances，2016年，Vol. 6，pp. 19857-19860
SABBA, Dharani et al.，Impact of Anionic Br- Substitution on Open Circuit Voltage in Lead Free Perovskite (CsSnI3-xBrx) Solar Cells，The Journal of Physical Chemistry C，2015年，Vol. 119，pp. 1763-1767
SONG, Tze-Bin et al.，Performance Enhancement of Lead-Free Tin-Based Perovskite Solar Cells with Reducing Atmosphere-Assisted Dispersible Additive，ACS Energy Letters，2017年，Vol. 2，pp. 897-903
WU, Junsheng et al.，Fluorine ion induced phase evolution of tin-based perovskite thin films: structure and properties，RSC Advances，2019年，Vol. 9，pp. 37119-37126
XU, Peng et al.，Influence of Defects and Synthesis Conditions on the Photovoltaic Performance of Perovskite Semiconductor CsSnI3，Chemistry of Materials，2014年，Vol. 26，pp. 6068-6072

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CN118104413A (zh) 2024-05-28
EP4418832A4 (en) 2025-02-19
EP4418832A1 (en) 2024-08-21
WO2023063429A1 (ja) 2023-04-20
US20240260451A1 (en) 2024-08-01
JPWO2023063429A1 (https=) 2023-04-20

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