JPWO2023058492A1 - - Google Patents
Info
- Publication number
- JPWO2023058492A1 JPWO2023058492A1 JP2023552809A JP2023552809A JPWO2023058492A1 JP WO2023058492 A1 JPWO2023058492 A1 JP WO2023058492A1 JP 2023552809 A JP2023552809 A JP 2023552809A JP 2023552809 A JP2023552809 A JP 2023552809A JP WO2023058492 A1 JPWO2023058492 A1 JP WO2023058492A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021164359 | 2021-10-05 | ||
| PCT/JP2022/035761 WO2023058492A1 (ja) | 2021-10-05 | 2022-09-26 | ドーパントの活性化率を向上させる方法及びそれらの方法により作製された構造 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023058492A1 true JPWO2023058492A1 (ja) | 2023-04-13 |
Family
ID=85804250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023552809A Pending JPWO2023058492A1 (ja) | 2021-10-05 | 2022-09-26 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2023058492A1 (ja) |
| CN (1) | CN118077034A (ja) |
| TW (1) | TW202334486A (ja) |
| WO (1) | WO2023058492A1 (ja) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5224256B2 (ja) * | 2005-06-02 | 2013-07-03 | 学校法人関西学院 | 単結晶炭化ケイ素基板の処理方法、半導体素子の製造方法 |
| WO2008120469A1 (ja) * | 2007-03-29 | 2008-10-09 | Panasonic Corporation | 炭化珪素半導体素子の製造方法 |
| WO2017158747A1 (ja) * | 2016-03-16 | 2017-09-21 | 株式会社日立製作所 | エピタキシャル基板の製造方法および半導体装置の製造方法 |
| JP7127283B2 (ja) | 2018-01-05 | 2022-08-30 | 富士電機株式会社 | 炭化珪素半導体基板および炭化珪素半導体基板の製造方法 |
| CN113227465B (zh) | 2018-11-05 | 2024-03-29 | 学校法人关西学院 | SiC半导体衬底及其制造方法和制造装置 |
| US20210399095A1 (en) | 2018-11-05 | 2021-12-23 | Kwansei Gakuin Educational Foundation | Sic semiconductor substrate, and, production method therefor and production device therefor |
| EP3936644A4 (en) * | 2019-03-05 | 2023-03-22 | Kwansei Gakuin Educational Foundation | METHOD FOR MANUFACTURING AN EPITAXIAL SUBSTRATE IN SIC AND DEVICE FOR MANUFACTURING THEREOF |
| JPWO2020218482A1 (ja) * | 2019-04-26 | 2020-10-29 |
-
2022
- 2022-09-26 CN CN202280067421.9A patent/CN118077034A/zh active Pending
- 2022-09-26 JP JP2023552809A patent/JPWO2023058492A1/ja active Pending
- 2022-09-26 WO PCT/JP2022/035761 patent/WO2023058492A1/ja active Application Filing
- 2022-09-28 TW TW111136635A patent/TW202334486A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN118077034A (zh) | 2024-05-24 |
| TW202334486A (zh) | 2023-09-01 |
| WO2023058492A1 (ja) | 2023-04-13 |