JPWO2022180659A1 - - Google Patents

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Publication number
JPWO2022180659A1
JPWO2022180659A1 JP2021543403A JP2021543403A JPWO2022180659A1 JP WO2022180659 A1 JPWO2022180659 A1 JP WO2022180659A1 JP 2021543403 A JP2021543403 A JP 2021543403A JP 2021543403 A JP2021543403 A JP 2021543403A JP WO2022180659 A1 JPWO2022180659 A1 JP WO2022180659A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021543403A
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Publication date
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Publication of JPWO2022180659A1 publication Critical patent/JPWO2022180659A1/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2021543403A 2021-02-24 2021-02-24 Pending JPWO2022180659A1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/006744 WO2022180659A1 (ja) 2021-02-24 2021-02-24 Ｉｉｉ族窒化物半導体エピタキシャルウエハの製造方法

Publications (1)

Publication Number Publication Date
JPWO2022180659A1 true JPWO2022180659A1 (ja) 2022-09-01

Family

ID=83047821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021543403A Pending JPWO2022180659A1 (ja) 2021-02-24 2021-02-24

Country Status (2)

Country Link
JP (1) JPWO2022180659A1 (ja)
WO (1) WO2022180659A1 (ja)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06232099A (ja) * 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法
JP2001342100A (ja) * 2000-03-29 2001-12-11 Toshiba Corp エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法
JP2005183902A (ja) * 2003-12-20 2005-07-07 Samsung Electro Mech Co Ltd 窒化物半導体の製造方法及びそれにより製造された窒化物半導体の構造
JP2007184379A (ja) * 2006-01-05 2007-07-19 Furukawa Co Ltd Ｉｉｉ族窒化物半導体結晶、ｉｉｉ族窒化物半導体基板、半導体装置およびｉｉｉ族窒化物半導体結晶の製造方法
JP2010171101A (ja) * 2009-01-21 2010-08-05 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP2010208935A (ja) * 2010-03-08 2010-09-24 Sumitomo Electric Ind Ltd 窒化物半導体
JP2012178443A (ja) * 2011-02-25 2012-09-13 Hitachi Kokusai Electric Inc 基板処理装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06232099A (ja) * 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法
JP2001342100A (ja) * 2000-03-29 2001-12-11 Toshiba Corp エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法
JP2005183902A (ja) * 2003-12-20 2005-07-07 Samsung Electro Mech Co Ltd 窒化物半導体の製造方法及びそれにより製造された窒化物半導体の構造
JP2007184379A (ja) * 2006-01-05 2007-07-19 Furukawa Co Ltd Ｉｉｉ族窒化物半導体結晶、ｉｉｉ族窒化物半導体基板、半導体装置およびｉｉｉ族窒化物半導体結晶の製造方法
JP2010171101A (ja) * 2009-01-21 2010-08-05 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP2010208935A (ja) * 2010-03-08 2010-09-24 Sumitomo Electric Ind Ltd 窒化物半導体
JP2012178443A (ja) * 2011-02-25 2012-09-13 Hitachi Kokusai Electric Inc 基板処理装置

Also Published As

Publication number Publication date
WO2022180659A1 (ja) 2022-09-01

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