JPWO2023047691A1 - - Google Patents

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Publication number
JPWO2023047691A1
JPWO2023047691A1 JP2023504559A JP2023504559A JPWO2023047691A1 JP WO2023047691 A1 JPWO2023047691 A1 JP WO2023047691A1 JP 2023504559 A JP2023504559 A JP 2023504559A JP 2023504559 A JP2023504559 A JP 2023504559A JP WO2023047691 A1 JPWO2023047691 A1 JP WO2023047691A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023504559A
Other versions
JP7295351B1 (ja
JPWO2023047691A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPWO2023047691A1 publication Critical patent/JPWO2023047691A1/ja
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Publication of JP7295351B1 publication Critical patent/JP7295351B1/ja
Publication of JPWO2023047691A5 publication Critical patent/JPWO2023047691A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023504559A 2021-09-22 2022-04-27 支持基板と１３族元素窒化物結晶基板との貼り合わせ基板 Active JP7295351B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021153852 2021-09-22
JP2021153852 2021-09-22
PCT/JP2022/019033 WO2023047691A1 (ja) 2021-09-22 2022-04-27 支持基板と１３族元素窒化物結晶基板との貼り合わせ基板

Publications (3)

Publication Number Publication Date
JPWO2023047691A1 true JPWO2023047691A1 (ja) 2023-03-30
JP7295351B1 JP7295351B1 (ja) 2023-06-20
JPWO2023047691A5 JPWO2023047691A5 (ja) 2023-08-29

Family

ID=85720378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023504559A Active JP7295351B1 (ja) 2021-09-22 2022-04-27 支持基板と１３族元素窒化物結晶基板との貼り合わせ基板

Country Status (3)

Country Link
JP (1) JP7295351B1 (ja)
CN (1) CN117897797A (ja)
WO (1) WO2023047691A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024004314A1 (ja) * 2022-06-30 2024-01-04 日本碍子株式会社 複合基板および１３族元素窒化物エピタキシャル成長用基板
WO2024058180A1 (ja) * 2022-09-12 2024-03-21 公立大学法人大阪 半導体装置形成用基板、半導体積層構造体、半導体装置、半導体装置形成用基板の製造方法、半導体積層構造体の製造方法及び半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW480554B (en) 1999-07-22 2002-03-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4458116B2 (ja) * 2007-05-30 2010-04-28 住友電気工業株式会社 エピタキシャル層成長用ｉｉｉ族窒化物半導体層貼り合わせ基板および半導体デバイス
JP2010168227A (ja) * 2009-01-20 2010-08-05 Ngk Insulators Ltd ＭｎドープＧａＮ結晶の製造方法
JP2010287731A (ja) * 2009-06-11 2010-12-24 Sumitomo Electric Ind Ltd 基板生産物の製造方法、基板生産物、及び半導体デバイス
JP2011020896A (ja) * 2009-07-16 2011-02-03 Ngk Insulators Ltd Ｚｎがドープされた３Ｂ族窒化物結晶、その製法及び電子デバイス
JP2012116741A (ja) 2010-11-12 2012-06-21 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物複合基板
JP2014086400A (ja) * 2012-10-26 2014-05-12 Mitsubishi Heavy Ind Ltd 高速原子ビーム源およびそれを用いた常温接合装置

Also Published As

Publication number Publication date
JP7295351B1 (ja) 2023-06-20
WO2023047691A1 (ja) 2023-03-30
CN117897797A (zh) 2024-04-16

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