JPWO2023032193A1 - - Google Patents
Info
- Publication number
- JPWO2023032193A1 JPWO2023032193A1 JP2023544969A JP2023544969A JPWO2023032193A1 JP WO2023032193 A1 JPWO2023032193 A1 JP WO2023032193A1 JP 2023544969 A JP2023544969 A JP 2023544969A JP 2023544969 A JP2023544969 A JP 2023544969A JP WO2023032193 A1 JPWO2023032193 A1 JP WO2023032193A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2021/032628 WO2023032193A1 (ja) | 2021-09-06 | 2021-09-06 | 半導体素子を用いたメモリ装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2023032193A1 true JPWO2023032193A1 (ja) | 2023-03-09 |
Family
ID=85385253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023544969A Pending JPWO2023032193A1 (ja) | 2021-09-06 | 2021-09-06 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11798616B2 (ja) |
JP (1) | JPWO2023032193A1 (ja) |
KR (1) | KR20240049600A (ja) |
CN (1) | CN117918063A (ja) |
TW (1) | TWI824701B (ja) |
WO (1) | WO2023032193A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220392900A1 (en) * | 2021-03-29 | 2022-12-08 | Unisantis Electronics Singapore Pte. Ltd. | Memory device using semiconductor element and method for manufacturing the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4064607B2 (ja) | 2000-09-08 | 2008-03-19 | 株式会社東芝 | 半導体メモリ装置 |
US7969808B2 (en) * | 2007-07-20 | 2011-06-28 | Samsung Electronics Co., Ltd. | Memory cell structures, memory arrays, memory devices, memory controllers, and memory systems, and methods of manufacturing and operating the same |
JP2009212279A (ja) * | 2008-03-04 | 2009-09-17 | Sony Corp | 半導体装置 |
US8213226B2 (en) * | 2008-12-05 | 2012-07-03 | Micron Technology, Inc. | Vertical transistor memory cell and array |
CN107845649A (zh) * | 2016-09-20 | 2018-03-27 | 松下知识产权经营株式会社 | 摄像装置及其制造方法 |
JP2019161042A (ja) * | 2018-03-14 | 2019-09-19 | 東芝メモリ株式会社 | 半導体装置 |
JP2020035913A (ja) * | 2018-08-30 | 2020-03-05 | キオクシア株式会社 | 半導体記憶装置 |
JP7369471B2 (ja) * | 2019-07-11 | 2023-10-26 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 柱状半導体装置と、その製造方法 |
-
2021
- 2021-09-06 WO PCT/JP2021/032628 patent/WO2023032193A1/ja unknown
- 2021-09-06 CN CN202180102168.1A patent/CN117918063A/zh active Pending
- 2021-09-06 JP JP2023544969A patent/JPWO2023032193A1/ja active Pending
- 2021-09-06 KR KR1020247010111A patent/KR20240049600A/ko unknown
-
2022
- 2022-09-02 US US17/901,982 patent/US11798616B2/en active Active
- 2022-09-06 TW TW111133739A patent/TWI824701B/zh active
Also Published As
Publication number | Publication date |
---|---|
US11798616B2 (en) | 2023-10-24 |
WO2023032193A1 (ja) | 2023-03-09 |
TWI824701B (zh) | 2023-12-01 |
CN117918063A (zh) | 2024-04-23 |
TW202327048A (zh) | 2023-07-01 |
KR20240049600A (ko) | 2024-04-16 |
US20230077140A1 (en) | 2023-03-09 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230412 |