JPWO2023026383A1 - - Google Patents

Info

Publication number
JPWO2023026383A1
JPWO2023026383A1 JP2023543539A JP2023543539A JPWO2023026383A1 JP WO2023026383 A1 JPWO2023026383 A1 JP WO2023026383A1 JP 2023543539 A JP2023543539 A JP 2023543539A JP 2023543539 A JP2023543539 A JP 2023543539A JP WO2023026383 A1 JPWO2023026383 A1 JP WO2023026383A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023543539A
Other languages
Japanese (ja)
Other versions
JPWO2023026383A5 (https=
JP7709075B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023026383A1 publication Critical patent/JPWO2023026383A1/ja
Publication of JPWO2023026383A5 publication Critical patent/JPWO2023026383A5/ja
Application granted granted Critical
Publication of JP7709075B2 publication Critical patent/JP7709075B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50Marginal testing, e.g. race, voltage or current testing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/12015Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising clock generation or timing circuitry
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012Marginal testing, e.g. race, voltage or current testing of timing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/12Static random access memory [SRAM] devices comprising a MOSFET load element
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5002Characteristic

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Tests Of Electronic Circuits (AREA)
JP2023543539A 2021-08-25 2021-08-25 半導体集積回路装置 Active JP7709075B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/031085 WO2023026383A1 (ja) 2021-08-25 2021-08-25 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JPWO2023026383A1 true JPWO2023026383A1 (https=) 2023-03-02
JPWO2023026383A5 JPWO2023026383A5 (https=) 2024-05-17
JP7709075B2 JP7709075B2 (ja) 2025-07-16

Family

ID=85321906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023543539A Active JP7709075B2 (ja) 2021-08-25 2021-08-25 半導体集積回路装置

Country Status (3)

Country Link
US (1) US12499963B2 (https=)
JP (1) JP7709075B2 (https=)
WO (1) WO2023026383A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240162895A1 (en) * 2022-11-16 2024-05-16 International Business Machines Corporation Competing path ring-oscillator for direct measurement of a latch timing window parameters

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014010874A (ja) * 2012-07-02 2014-01-20 Fujitsu Semiconductor Ltd リング発振器及び半導体装置
JP2014150353A (ja) * 2013-01-31 2014-08-21 Fujitsu Semiconductor Ltd リング発振器及び半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2748865B2 (ja) * 1994-09-27 1998-05-13 日本電気株式会社 出力回路
JP2001101870A (ja) * 1999-09-30 2001-04-13 Fujitsu Ltd 半導体集積回路
JP2002009601A (ja) * 2000-06-27 2002-01-11 Fujitsu Ltd 半導体集積回路および半導体集積回路の初期化方法
JP3939208B2 (ja) * 2002-06-24 2007-07-04 富士通株式会社 出力パルスサイクルを短くできるパルス発生回路
JP2008219232A (ja) * 2007-03-01 2008-09-18 Matsushita Electric Ind Co Ltd 半導体集積回路
JP5200506B2 (ja) * 2007-11-28 2013-06-05 富士通セミコンダクター株式会社 メモリ装置
JP2010073282A (ja) * 2008-09-19 2010-04-02 Nec Electronics Corp 半導体装置、半導体装置の設計方法
US10964379B2 (en) * 2018-11-07 2021-03-30 Arm Limited Ring oscillator based bitcell delay monitor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014010874A (ja) * 2012-07-02 2014-01-20 Fujitsu Semiconductor Ltd リング発振器及び半導体装置
JP2014150353A (ja) * 2013-01-31 2014-08-21 Fujitsu Semiconductor Ltd リング発振器及び半導体装置

Also Published As

Publication number Publication date
WO2023026383A1 (ja) 2023-03-02
US20240233854A1 (en) 2024-07-11
US12499963B2 (en) 2025-12-16
JP7709075B2 (ja) 2025-07-16

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