JPWO2022259399A1 - - Google Patents
Info
- Publication number
- JPWO2022259399A1 JPWO2022259399A1 JP2022549122A JP2022549122A JPWO2022259399A1 JP WO2022259399 A1 JPWO2022259399 A1 JP WO2022259399A1 JP 2022549122 A JP2022549122 A JP 2022549122A JP 2022549122 A JP2022549122 A JP 2022549122A JP WO2022259399 A1 JPWO2022259399 A1 JP WO2022259399A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2021/021848 WO2022259399A1 (ja) | 2021-06-09 | 2021-06-09 | 半導体製造方法及び半導体製造装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JPWO2022259399A1 true JPWO2022259399A1 (ja) | 2022-12-15 |
JPWO2022259399A5 JPWO2022259399A5 (ja) | 2023-05-23 |
JP7307861B2 JP7307861B2 (ja) | 2023-07-12 |
Family
ID=84425973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022549122A Active JP7307861B2 (ja) | 2021-06-09 | 2021-06-09 | 半導体製造方法及び半導体製造装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7307861B2 (ja) |
KR (1) | KR20220166786A (ja) |
CN (1) | CN115707346A (ja) |
WO (1) | WO2022259399A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005175466A (ja) * | 2003-11-26 | 2005-06-30 | Air Products & Chemicals Inc | 反応器表面から物質を除去するための方法、装置及び混合物 |
JP2016197680A (ja) * | 2015-04-06 | 2016-11-24 | 東京エレクトロン株式会社 | エッチング方法 |
JP2020501373A (ja) * | 2016-12-09 | 2020-01-16 | エーエスエム アイピー ホールディング ビー.ブイ. | 熱原子層エッチングプロセス |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4663059B2 (ja) * | 2000-03-10 | 2011-03-30 | 東京エレクトロン株式会社 | 処理装置のクリーニング方法 |
JP5259125B2 (ja) * | 2006-08-24 | 2013-08-07 | 富士通セミコンダクター株式会社 | 基板処理方法、半導体装置の製造方法、基板処理装置および記録媒体 |
JP5811540B2 (ja) * | 2011-01-25 | 2015-11-11 | 東京エレクトロン株式会社 | 金属膜の加工方法及び加工装置 |
WO2016100873A1 (en) | 2014-12-18 | 2016-06-23 | The Regents Of The University Of Colorado, A Body Corporate | Novel methods of atomic layer etching (ale) using sequential, self-limiting thermal reactions |
KR20200096406A (ko) * | 2019-02-01 | 2020-08-12 | 주식회사 히타치하이테크 | 에칭 방법 및 플라스마 처리 장치 |
US11380523B2 (en) * | 2019-02-14 | 2022-07-05 | Hitachi High-Tech Corporation | Semiconductor manufacturing apparatus |
-
2021
- 2021-06-09 KR KR1020227030485A patent/KR20220166786A/ko unknown
- 2021-06-09 CN CN202180017655.8A patent/CN115707346A/zh active Pending
- 2021-06-09 WO PCT/JP2021/021848 patent/WO2022259399A1/ja active Application Filing
- 2021-06-09 JP JP2022549122A patent/JP7307861B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005175466A (ja) * | 2003-11-26 | 2005-06-30 | Air Products & Chemicals Inc | 反応器表面から物質を除去するための方法、装置及び混合物 |
JP2016197680A (ja) * | 2015-04-06 | 2016-11-24 | 東京エレクトロン株式会社 | エッチング方法 |
JP2020501373A (ja) * | 2016-12-09 | 2020-01-16 | エーエスエム アイピー ホールディング ビー.ブイ. | 熱原子層エッチングプロセス |
Also Published As
Publication number | Publication date |
---|---|
CN115707346A (zh) | 2023-02-17 |
KR20220166786A (ko) | 2022-12-19 |
WO2022259399A1 (ja) | 2022-12-15 |
JP7307861B2 (ja) | 2023-07-12 |
TW202314827A (zh) | 2023-04-01 |
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