JPWO2022210518A5 - - Google Patents
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- JPWO2022210518A5 JPWO2022210518A5 JP2023511247A JP2023511247A JPWO2022210518A5 JP WO2022210518 A5 JPWO2022210518 A5 JP WO2022210518A5 JP 2023511247 A JP2023511247 A JP 2023511247A JP 2023511247 A JP2023511247 A JP 2023511247A JP WO2022210518 A5 JPWO2022210518 A5 JP WO2022210518A5
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- JP
- Japan
- Prior art keywords
- sintered body
- aluminum nitride
- nitride sintered
- less
- obtaining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 13
- 239000002245 particle Substances 0.000 claims 6
- 238000010304 firing Methods 0.000 claims 3
- 238000005245 sintering Methods 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 2
- 238000004458 analytical method Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000001186 cumulative effect Effects 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 238000001000 micrograph Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Claims (7)
金属板と積層して積層体を調製し、350℃の環境に5分間曝した後、25℃の環境で5分間冷却した前記積層体を対象とし、-78℃の環境に5分間曝した後に、25℃に戻す操作を1サイクルとして、10サイクルのヒートサイクル試験を行った場合に、観測されるクラック率が9.00面積%未満である、窒化アルミニウム焼結体。 An aluminum nitride sintered body containing aluminum nitride particles and sintering aid particles,
A laminate was prepared by laminating with a metal plate, exposed to an environment of 350 ° C. for 5 minutes, cooled for 5 minutes in an environment of 25 ° C., and exposed to an environment of -78 ° C. for 5 minutes. , an aluminum nitride sintered body having an observed crack rate of less than 9.00 area % when subjected to a heat cycle test of 10 cycles, one cycle of which is an operation of returning to 25°C.
前記焼結体を1400℃以上1700℃未満の温度で1時間以上加熱処理することでアニール処理物を得る工程と、
前記アニール処理物の表面を研磨処理することで窒化アルミニウム焼結体を得る工程と、を有し、
前記焼結助剤は酸化イットリウム及び酸化アルミニウムを含有し、
前記酸化イットリウムに対する前記酸化アルミニウムの質量比が0.5未満であり、
前記焼成工程は、
1700℃以上1800℃未満の温度で1時間以上加熱することによって、前記成形体から第一焼成体を得る工程と、
1800~1900℃の温度で1時間以上加熱することによって、前記第一焼成体から前記焼結体を得る工程と、を含む、窒化アルミニウム焼結体の製造方法。 a firing step of firing a molded body composed of a mixture containing aluminum nitride and a sintering aid for 1 to 6 hours to obtain a sintered body;
obtaining an annealed product by heat-treating the sintered body at a temperature of 1400° C. or more and less than 1700° C. for 1 hour or more;
and obtaining an aluminum nitride sintered body by polishing the surface of the annealed product,
The sintering aid contains yttrium oxide and aluminum oxide,
The mass ratio of the aluminum oxide to the yttrium oxide is less than 0.5,
The firing step includes
a step of obtaining a first fired body from the molded body by heating at a temperature of 1700° C. or more and less than 1800° C. for 1 hour or more;
and obtaining the sintered body from the first sintered body by heating at a temperature of 1800 to 1900° C. for 1 hour or more.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021060245 | 2021-03-31 | ||
JP2021060245 | 2021-03-31 | ||
PCT/JP2022/014941 WO2022210518A1 (en) | 2021-03-31 | 2022-03-28 | Aluminium nitride sintered body, production method for same, circuit board, and laminated substrate |
Publications (3)
Publication Number | Publication Date |
---|---|
JPWO2022210518A1 JPWO2022210518A1 (en) | 2022-10-06 |
JPWO2022210518A5 true JPWO2022210518A5 (en) | 2023-05-25 |
JP7429825B2 JP7429825B2 (en) | 2024-02-08 |
Family
ID=83456332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023511247A Active JP7429825B2 (en) | 2021-03-31 | 2022-03-28 | Aluminum nitride sintered body, method for manufacturing the same, circuit board, and laminated board |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP7429825B2 (en) |
WO (1) | WO2022210518A1 (en) |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63129075A (en) * | 1986-11-18 | 1988-06-01 | 旭硝子株式会社 | Manufacture of aluminum nitride sintered body |
JPH0524930A (en) * | 1991-07-16 | 1993-02-02 | Showa Denko Kk | Aln sintered compact and production thereof |
JP3585338B2 (en) * | 1997-03-06 | 2004-11-04 | 電気化学工業株式会社 | Aluminum nitride substrate and its use |
JPH10310475A (en) * | 1997-05-02 | 1998-11-24 | Denki Kagaku Kogyo Kk | Aluminum nitride sintered compact and its use |
JP2001097779A (en) | 1999-09-28 | 2001-04-10 | Toshiba Corp | Aluminum nitride board and circuit board using the same |
JP4515562B2 (en) | 1999-09-30 | 2010-08-04 | 株式会社東芝 | Manufacturing method of ceramic circuit board |
WO2002024605A1 (en) * | 2000-09-21 | 2002-03-28 | Sintokogio, Ltd. | Method for toughening modification of ceramic and ceramic product |
JP2002160974A (en) | 2000-11-22 | 2002-06-04 | Ibiden Co Ltd | Aluminium nitride sintered compact and its manufacturing method, ceramic substrate and its manufacturing method |
JP5031147B2 (en) | 2001-03-29 | 2012-09-19 | 電気化学工業株式会社 | Method for producing aluminum nitride sintered body |
JP3998252B2 (en) | 2003-09-02 | 2007-10-24 | 電気化学工業株式会社 | Method for producing aluminum nitride sintered body |
JPWO2006135016A1 (en) | 2005-06-15 | 2009-01-08 | 株式会社トクヤマ | Aluminum nitride sintered body, slurry, green body, and degreased body |
EP1923372A4 (en) | 2005-08-11 | 2009-11-04 | Tokuyama Corp | Aluminum nitride sintered body |
JP2017043502A (en) | 2015-08-24 | 2017-03-02 | 住友電気工業株式会社 | Aluminum nitride sintered compact and method for producing the same |
WO2021261441A1 (en) * | 2020-06-22 | 2021-12-30 | デンカ株式会社 | Aluminum nitride sintered body, circuit substrate and junction substrate |
-
2022
- 2022-03-28 WO PCT/JP2022/014941 patent/WO2022210518A1/en active Application Filing
- 2022-03-28 JP JP2023511247A patent/JP7429825B2/en active Active
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