JPWO2022210518A5 - - Google Patents

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JPWO2022210518A5
JPWO2022210518A5 JP2023511247A JP2023511247A JPWO2022210518A5 JP WO2022210518 A5 JPWO2022210518 A5 JP WO2022210518A5 JP 2023511247 A JP2023511247 A JP 2023511247A JP 2023511247 A JP2023511247 A JP 2023511247A JP WO2022210518 A5 JPWO2022210518 A5 JP WO2022210518A5
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sintered body
aluminum nitride
nitride sintered
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obtaining
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JPWO2022210518A1 (en
JP7429825B2 (en
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Priority claimed from PCT/JP2022/014941 external-priority patent/WO2022210518A1/en
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窒化アルミニウム粒子と、焼結助剤粒子と、を含む、窒化アルミニウム焼結体であって、
金属板と積層して積層体を調製し、350℃の環境に5分間曝した後、25℃の環境で5分間冷却した前記積層体を対象とし、-78℃の環境に5分間曝した後に、25℃に戻す操作を1サイクルとして、10サイクルのヒートサイクル試験を行った場合に、観測されるクラック率が9.00面積%未満である、窒化アルミニウム焼結体。
An aluminum nitride sintered body containing aluminum nitride particles and sintering aid particles,
A laminate was prepared by laminating with a metal plate, exposed to an environment of 350 ° C. for 5 minutes, cooled for 5 minutes in an environment of 25 ° C., and exposed to an environment of -78 ° C. for 5 minutes. , an aluminum nitride sintered body having an observed crack rate of less than 9.00 area % when subjected to a heat cycle test of 10 cycles, one cycle of which is an operation of returning to 25°C.
一対の主面を有する板状であり、前記主面における最大高さ粗さRyと算術平均粗さRaとの差が6.0μm以下である、請求項1に記載の窒化アルミニウム焼結体。 2. The aluminum nitride sintered body according to claim 1, which has a plate-like shape having a pair of main surfaces, and the difference between the maximum height roughness Ry and the arithmetic mean roughness Ra on the main surfaces is 6.0 μm or less. 前記最大高さ粗さRyが10.0μm未満である、請求項2に記載の窒化アルミニウム焼結体。 3. The aluminum nitride sintered body according to claim 2, wherein said maximum height roughness Ry is less than 10.0 [mu]m. 前記窒化アルミニウム粒子に対する電子顕微鏡画像解析によって測定される粒子径の累積頻度分布曲線において、小粒径からの積算値が全体の50%及び90%に達した時の粒子径を、それぞれd50及びd90としたときに、d90-d50の値が10.0μm未満である、請求項1~3のいずれか一項に記載の窒化アルミニウム焼結体。 In the cumulative frequency distribution curve of the particle size measured by electron microscope image analysis for the aluminum nitride particles, the particle size when the integrated value from the small particle size reaches 50% and 90% of the total is d50 and d90, respectively. 4. The aluminum nitride sintered body according to any one of claims 1 to 3, wherein the value of d90-d50 is less than 10.0 µm. 請求項1~4のいずれか一項に記載の窒化アルミニウム焼結体と、当該窒化アルミニウム焼結体に取り付けられている導体部と、を備える、回路基板。 A circuit board comprising the aluminum nitride sintered body according to any one of claims 1 to 4 and a conductor portion attached to the aluminum nitride sintered body. 請求項1~4のいずれか一項に記載の窒化アルミニウム焼結体と、当該窒化アルミニウム焼結体に取り付けられている金属板と、を備える積層基板。 A laminated substrate comprising the aluminum nitride sintered body according to any one of claims 1 to 4 and a metal plate attached to the aluminum nitride sintered body. 窒化アルミニウム及び焼結助剤を含む混合物で構成される成形体を1~6時間焼成して焼結体を得る焼成工程と、
前記焼結体を1400℃以上1700℃未満の温度で1時間以上加熱処理することでアニール処理物を得る工程と、
前記アニール処理物の表面を研磨処理することで窒化アルミニウム焼結体を得る工程と、を有し、
前記焼結助剤は酸化イットリウム及び酸化アルミニウムを含有し、
前記酸化イットリウムに対する前記酸化アルミニウムの質量比が0.5未満であり、
前記焼成工程は、
1700℃以上1800℃未満の温度で1時以上加熱することによって、前記成形体から第一焼成体を得る工程と、
1800~1900℃の温度で1時間以上加熱することによって、前記第一焼成体から前記焼結体を得る工程と、を含む、窒化アルミニウム焼結体の製造方法。
a firing step of firing a molded body composed of a mixture containing aluminum nitride and a sintering aid for 1 to 6 hours to obtain a sintered body;
obtaining an annealed product by heat-treating the sintered body at a temperature of 1400° C. or more and less than 1700° C. for 1 hour or more;
and obtaining an aluminum nitride sintered body by polishing the surface of the annealed product,
The sintering aid contains yttrium oxide and aluminum oxide,
The mass ratio of the aluminum oxide to the yttrium oxide is less than 0.5,
The firing step includes
a step of obtaining a first fired body from the molded body by heating at a temperature of 1700° C. or more and less than 1800° C. for 1 hour or more;
and obtaining the sintered body from the first sintered body by heating at a temperature of 1800 to 1900° C. for 1 hour or more.
JP2023511247A 2021-03-31 2022-03-28 Aluminum nitride sintered body, method for manufacturing the same, circuit board, and laminated board Active JP7429825B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021060245 2021-03-31
JP2021060245 2021-03-31
PCT/JP2022/014941 WO2022210518A1 (en) 2021-03-31 2022-03-28 Aluminium nitride sintered body, production method for same, circuit board, and laminated substrate

Publications (3)

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JPWO2022210518A1 JPWO2022210518A1 (en) 2022-10-06
JPWO2022210518A5 true JPWO2022210518A5 (en) 2023-05-25
JP7429825B2 JP7429825B2 (en) 2024-02-08

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WO (1) WO2022210518A1 (en)

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JPS63129075A (en) * 1986-11-18 1988-06-01 旭硝子株式会社 Manufacture of aluminum nitride sintered body
JPH0524930A (en) * 1991-07-16 1993-02-02 Showa Denko Kk Aln sintered compact and production thereof
JP3585338B2 (en) * 1997-03-06 2004-11-04 電気化学工業株式会社 Aluminum nitride substrate and its use
JPH10310475A (en) * 1997-05-02 1998-11-24 Denki Kagaku Kogyo Kk Aluminum nitride sintered compact and its use
JP2001097779A (en) 1999-09-28 2001-04-10 Toshiba Corp Aluminum nitride board and circuit board using the same
JP4515562B2 (en) 1999-09-30 2010-08-04 株式会社東芝 Manufacturing method of ceramic circuit board
WO2002024605A1 (en) * 2000-09-21 2002-03-28 Sintokogio, Ltd. Method for toughening modification of ceramic and ceramic product
JP2002160974A (en) 2000-11-22 2002-06-04 Ibiden Co Ltd Aluminium nitride sintered compact and its manufacturing method, ceramic substrate and its manufacturing method
JP5031147B2 (en) 2001-03-29 2012-09-19 電気化学工業株式会社 Method for producing aluminum nitride sintered body
JP3998252B2 (en) 2003-09-02 2007-10-24 電気化学工業株式会社 Method for producing aluminum nitride sintered body
JPWO2006135016A1 (en) 2005-06-15 2009-01-08 株式会社トクヤマ Aluminum nitride sintered body, slurry, green body, and degreased body
EP1923372A4 (en) 2005-08-11 2009-11-04 Tokuyama Corp Aluminum nitride sintered body
JP2017043502A (en) 2015-08-24 2017-03-02 住友電気工業株式会社 Aluminum nitride sintered compact and method for producing the same
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