JPWO2022210209A5 - - Google Patents

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JPWO2022210209A5
JPWO2022210209A5 JP2022554356A JP2022554356A JPWO2022210209A5 JP WO2022210209 A5 JPWO2022210209 A5 JP WO2022210209A5 JP 2022554356 A JP2022554356 A JP 2022554356A JP 2022554356 A JP2022554356 A JP 2022554356A JP WO2022210209 A5 JPWO2022210209 A5 JP WO2022210209A5
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silicon nitride
peak
particle size
nitride powder
powder according
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JP2022554356A
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JPWO2022210209A1 (en
JP7242972B2 (en
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Priority claimed from PCT/JP2022/013707 external-priority patent/WO2022210209A1/en
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Claims (9)

窒化ケイ素の一次粒子を含み、
レーザー回折・散乱法を用いた粒子径分布測定装置で測定される体積基準の粒子径分布が、第１ピークと、第１ピークよりも大きい粒子径領域に第２ピークとを有し、
前記第１ピークと前記第２ピークとの間の頻度の最低高さ及び前記第１ピークの高さを、それぞれＨ０及びＨ１としたときに、Ｈ１が４．０～８．０体積％、且つＨ１／Ｈ０が１．６以上であり、
表面酸素量が０．５質量％以上である、窒化ケイ素粉末。 containing primary particles of silicon nitride,
Volume-based particle size distribution measured with a particle size distribution measuring device using a laser diffraction/scattering method has a first peak and a second peak in a particle size region larger than the first peak,
When the minimum height of the frequency between the first peak and the second peak and the height of the first peak are H0 and H1, respectively, H1 is 4.0 to 8.0% by volume, and H1/H0 is 1.6 or more,
A silicon nitride powder having a surface oxygen content of 0.5% by mass or more . 前記粒子径分布において、前記最低高さＨ０における粒子径ｄ０と前記第１ピークにおける粒子径ｄ１との差が０．６μｍ以下である、請求項１に記載の窒化ケイ素粉末。 2. The silicon nitride powder according to claim 1, wherein in the particle size distribution, the difference between the particle size d0 at the lowest height H0 and the particle size d1 at the first peak is 0.6 μm or less. 前記第２ピークの粒子径ｄ２と前記第１ピークの粒子径ｄ１との差が２．０μｍ以下である、請求項１又は２に記載の窒化ケイ素粉末。 3. The silicon nitride powder according to claim 1, wherein the difference between the second peak particle size d2 and the first peak particle size d1 is 2.0 μm or less. １２０℃で測定される水分率が０．４質量％以下である、請求項１～３のいずれか一項に記載の窒化ケイ素粉末。 The silicon nitride powder according to any one of claims 1 to 3, which has a moisture content of 0.4% by mass or less as measured at 120°C. 前記第１ピークの粒子径ｄ１は０．２～１．０μｍであり、前記第２ピークの粒子径ｄ２は１．５μｍを超え且つ４．０μｍ未満である、請求項１～４のいずれか一項に記載の窒化ケイ素粉末。 Any one of claims 1 to 4, wherein the particle diameter d1 of the first peak is 0.2 to 1.0 μm, and the particle diameter d2 of the second peak is more than 1.5 μm and less than 4.0 μm. Silicon nitride powder according to the paragraph. 平均粒子径は０．８～１．８μｍである、請求項１～５のいずれか一項に記載の窒化ケイ素粉末。 Silicon nitride powder according to any one of claims 1 to 5, having an average particle size of 0.8 to 1.8 µm. 前記表面酸素量は３．０質量％以下である、請求項１～６のいずれか一項に記載の窒化ケイ素粉末。 The silicon nitride powder according to any one of claims 1 to 6, wherein the surface oxygen content is 3.0% by mass or less. １：１の質量比で水と混合して得られるスラリーの２５℃における粘度（３０ｒｐｍ）が１０Ｐａ・ｓ以下である、請求項１～７のいずれか一項に記載の窒化ケイ素粉末。 The silicon nitride powder according to any one of claims 1 to 7, wherein the viscosity (30 rpm) of a slurry obtained by mixing with water at a mass ratio of 1:1 is 10 Pa·s or less at 25°C. 請求項１～８のいずれか一項に記載の窒化ケイ素粉末を含む焼結原料を用いて窒化ケイ素焼結体を得る工程を有する、窒化ケイ素焼結体の製造方法。 A method for producing a silicon nitride sintered body, comprising a step of obtaining a silicon nitride sintered body using a sintering raw material containing the silicon nitride powder according to any one of claims 1 to 8.
JP2022554356A 2021-03-30 2022-03-23 Method for producing silicon nitride powder and silicon nitride sintered body Active JP7242972B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021057685 2021-03-30
JP2021057685 2021-03-30
PCT/JP2022/013707 WO2022210209A1 (en) 2021-03-30 2022-03-23 Silicon nitride powder and method for producing silicon nitride sintered body

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JPWO2022210209A1 JPWO2022210209A1 (en) 2022-10-06
JPWO2022210209A5 true JPWO2022210209A5 (en) 2023-03-01
JP7242972B2 JP7242972B2 (en) 2023-03-20

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WO (1) WO2022210209A1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3438928B2 (en) * 1994-01-12 2003-08-18 電気化学工業株式会社 Method for producing silicon nitride powder
JP2002265276A (en) * 2001-03-07 2002-09-18 Hitachi Metals Ltd Silicon nitride powder and silicon nitride sintered compact
CN102206082A (en) * 2011-03-03 2011-10-05 北方民族大学 Method for preparing submicron silicon nitride
JP2013203613A (en) * 2012-03-29 2013-10-07 Ube Industries Ltd Method for controlling silicon nitride powder
JP6354367B2 (en) * 2014-06-16 2018-07-11 宇部興産株式会社 Silicon nitride powder for release agent of polycrystalline silicon ingot casting mold and manufacturing method thereof, slurry containing silicon nitride powder for release agent of casting mold of polycrystalline silicon ingot, and casting mold for polycrystalline silicon ingot and manufacturing method thereof

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