JPWO2022201253A1 - - Google Patents
Info
- Publication number
- JPWO2022201253A1 JPWO2022201253A1 JP2023508173A JP2023508173A JPWO2022201253A1 JP WO2022201253 A1 JPWO2022201253 A1 JP WO2022201253A1 JP 2023508173 A JP2023508173 A JP 2023508173A JP 2023508173 A JP2023508173 A JP 2023508173A JP WO2022201253 A1 JPWO2022201253 A1 JP WO2022201253A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
- G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/82—Current path
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
- H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
- H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
- H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W20/211—Through-semiconductor vias, e.g. TSVs
- H10W20/213—Cross-sectional shapes or dispositions
- H10W20/2134—TSVs extending from the semiconductor wafer into back-end-of-line layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Optimization (AREA)
- Computing Systems (AREA)
- Evolutionary Computation (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Analysis (AREA)
- Computational Mathematics (AREA)
- Pure & Applied Mathematics (AREA)
- Data Mining & Analysis (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- Artificial Intelligence (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/011752 WO2022201253A1 (ja) | 2021-03-22 | 2021-03-22 | 超電導デバイス、超電導デバイスの製造方法及び積層体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022201253A1 true JPWO2022201253A1 (https=) | 2022-09-29 |
| JPWO2022201253A5 JPWO2022201253A5 (https=) | 2023-09-12 |
| JP7563578B2 JP7563578B2 (ja) | 2024-10-08 |
Family
ID=83395369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023508173A Active JP7563578B2 (ja) | 2021-03-22 | 2021-03-22 | 超電導デバイス、超電導デバイスの製造方法及び積層体 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240237557A1 (https=) |
| EP (1) | EP4318618B1 (https=) |
| JP (1) | JP7563578B2 (https=) |
| CN (1) | CN116897616A (https=) |
| FI (1) | FI4318618T3 (https=) |
| WO (1) | WO2022201253A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12588147B2 (en) * | 2022-11-09 | 2026-03-24 | Micron Technology, Inc. | Filling cracks on a substrate via |
| WO2024111061A1 (ja) * | 2022-11-22 | 2024-05-30 | 富士通株式会社 | 装置および装置の製造方法 |
| US12550635B2 (en) | 2023-05-17 | 2026-02-10 | International Business Machines Corporation | Controlling TLS via on-chip filtering to prevent qubit energy loss |
| WO2025046715A1 (ja) * | 2023-08-28 | 2025-03-06 | 富士通株式会社 | 量子ビットデバイス及び量子ビットデバイスの製造方法 |
| JP2026028554A (ja) * | 2024-08-07 | 2026-02-20 | 富士通株式会社 | デバイスの製造方法及びデバイス |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5397798A (en) * | 1977-02-08 | 1978-08-26 | Mitsubishi Electric Corp | Superconductive compound wire and production of the same |
| JPH0269994A (ja) * | 1988-09-05 | 1990-03-08 | Mitsubishi Mining & Cement Co Ltd | セラミック超伝導体多層配線基板およびその製造方法 |
| JPH11177157A (ja) * | 1997-12-08 | 1999-07-02 | Agency Of Ind Science & Technol | 超電導集積回路構造及びその製造方法 |
| JP2019504511A (ja) * | 2015-12-15 | 2019-02-14 | グーグル エルエルシー | 超伝導バンプボンド |
| JP2020520090A (ja) * | 2017-05-09 | 2020-07-02 | インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ | 自己整列はんだバンプを備えた基板貫通ビアを含む半導体デバイスを製造する方法および半導体構造 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9836699B1 (en) * | 2015-04-27 | 2017-12-05 | Rigetti & Co. | Microwave integrated quantum circuits with interposer |
| US10242968B2 (en) * | 2015-11-05 | 2019-03-26 | Massachusetts Institute Of Technology | Interconnect structure and semiconductor structures for assembly of cryogenic electronic packages |
| US10291231B2 (en) * | 2016-07-20 | 2019-05-14 | Microsoft Technology Licensing, Llc | Superconducting device with dummy elements |
-
2021
- 2021-03-22 WO PCT/JP2021/011752 patent/WO2022201253A1/ja not_active Ceased
- 2021-03-22 EP EP21932866.3A patent/EP4318618B1/en active Active
- 2021-03-22 JP JP2023508173A patent/JP7563578B2/ja active Active
- 2021-03-22 FI FIEP21932866.3T patent/FI4318618T3/fi active
- 2021-03-22 CN CN202180091628.5A patent/CN116897616A/zh active Pending
-
2023
- 2023-07-13 US US18/351,575 patent/US20240237557A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5397798A (en) * | 1977-02-08 | 1978-08-26 | Mitsubishi Electric Corp | Superconductive compound wire and production of the same |
| JPH0269994A (ja) * | 1988-09-05 | 1990-03-08 | Mitsubishi Mining & Cement Co Ltd | セラミック超伝導体多層配線基板およびその製造方法 |
| JPH11177157A (ja) * | 1997-12-08 | 1999-07-02 | Agency Of Ind Science & Technol | 超電導集積回路構造及びその製造方法 |
| JP2019504511A (ja) * | 2015-12-15 | 2019-02-14 | グーグル エルエルシー | 超伝導バンプボンド |
| JP2020520090A (ja) * | 2017-05-09 | 2020-07-02 | インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ | 自己整列はんだバンプを備えた基板貫通ビアを含む半導体デバイスを製造する方法および半導体構造 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116897616A (zh) | 2023-10-17 |
| EP4318618B1 (en) | 2025-09-10 |
| EP4318618A4 (en) | 2024-06-05 |
| JP7563578B2 (ja) | 2024-10-08 |
| FI4318618T3 (fi) | 2025-10-17 |
| US20240237557A1 (en) | 2024-07-11 |
| EP4318618A1 (en) | 2024-02-07 |
| WO2022201253A1 (ja) | 2022-09-29 |
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