JPWO2022190475A1 - - Google Patents
Info
- Publication number
- JPWO2022190475A1 JPWO2022190475A1 JP2023505104A JP2023505104A JPWO2022190475A1 JP WO2022190475 A1 JPWO2022190475 A1 JP WO2022190475A1 JP 2023505104 A JP2023505104 A JP 2023505104A JP 2023505104 A JP2023505104 A JP 2023505104A JP WO2022190475 A1 JPWO2022190475 A1 JP WO2022190475A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021040653 | 2021-03-12 | ||
| PCT/JP2021/043594 WO2022190475A1 (ja) | 2021-03-12 | 2021-11-29 | 静電気放電保護回路、および、電子装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022190475A1 true JPWO2022190475A1 (https=) | 2022-09-15 |
Family
ID=83226261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023505104A Abandoned JPWO2022190475A1 (https=) | 2021-03-12 | 2021-11-29 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2022190475A1 (https=) |
| WO (1) | WO2022190475A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102024130827A1 (de) | 2024-10-23 | 2026-04-23 | Elmos Semiconductor Se | ESD-Schutzschaltung |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5946177A (en) * | 1998-08-17 | 1999-08-31 | Motorola, Inc. | Circuit for electrostatic discharge protection |
| US7209332B2 (en) * | 2002-12-10 | 2007-04-24 | Freescale Semiconductor, Inc. | Transient detection circuit |
| JP2008227003A (ja) * | 2007-03-09 | 2008-09-25 | Kawasaki Microelectronics Kk | 静電気放電保護回路 |
| US8116047B2 (en) * | 2008-12-18 | 2012-02-14 | Sandisk Technologies Inc. | Electrostatic discharge protective circuit having rise time detector and discharge sustaining circuitry |
| US8369054B2 (en) * | 2010-06-08 | 2013-02-05 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | NMOS-based feedback power-clamp for on-chip ESD protection |
| JP5726583B2 (ja) * | 2011-03-16 | 2015-06-03 | リコー電子デバイス株式会社 | Ｅｓｄ保護回路 |
| JP5696074B2 (ja) * | 2012-03-16 | 2015-04-08 | 株式会社東芝 | 半導体装置 |
| JP2016162884A (ja) * | 2015-03-02 | 2016-09-05 | 株式会社東芝 | 静電気保護回路 |
| JP2017055299A (ja) * | 2015-09-10 | 2017-03-16 | 株式会社東芝 | 静電気保護回路 |
-
2021
- 2021-11-29 JP JP2023505104A patent/JPWO2022190475A1/ja not_active Abandoned
- 2021-11-29 WO PCT/JP2021/043594 patent/WO2022190475A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022190475A1 (ja) | 2022-09-15 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20241009 |
|
| A762 | Written abandonment of application |
Free format text: JAPANESE INTERMEDIATE CODE: A762 Effective date: 20250924 |