JPWO2022190168A1 - - Google Patents

Info

Publication number
JPWO2022190168A1
JPWO2022190168A1 JP2021538694A JP2021538694A JPWO2022190168A1 JP WO2022190168 A1 JPWO2022190168 A1 JP WO2022190168A1 JP 2021538694 A JP2021538694 A JP 2021538694A JP 2021538694 A JP2021538694 A JP 2021538694A JP WO2022190168 A1 JPWO2022190168 A1 JP WO2022190168A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021538694A
Other versions
JP7019107B1 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of JP7019107B1 publication Critical patent/JP7019107B1/ja
Publication of JPWO2022190168A1 publication Critical patent/JPWO2022190168A1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
    • H04B5/75—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for isolation purposes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/945—Proximity switches
    • H03K17/95—Proximity switches using a magnetic detector
    • H03K17/952—Proximity switches using a magnetic detector using inductive coils
    • H03K2017/9527—Details of coils in the emitter or receiver; Magnetic detector comprising emitting and receiving coils

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Dc Digital Transmission (AREA)
JP2021538694A 2021-03-08 2021-03-08 信号絶縁回路 Active JP7019107B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/008980 WO2022190168A1 (ja) 2021-03-08 2021-03-08 信号絶縁回路

Publications (2)

Publication Number Publication Date
JP7019107B1 JP7019107B1 (ja) 2022-02-14
JPWO2022190168A1 true JPWO2022190168A1 (ja) 2022-09-15

Family

ID=80912412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021538694A Active JP7019107B1 (ja) 2021-03-08 2021-03-08 信号絶縁回路

Country Status (3)

Country Link
US (1) US20240128975A1 (ja)
JP (1) JP7019107B1 (ja)
WO (1) WO2022190168A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240361425A1 (en) * 2023-04-25 2024-10-31 Avago Technologies Intemational Sales Pte. Limited Cancellation technique for second harmonic distortion and spectral image in dacs and digital transmitters

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59216325A (ja) * 1983-05-25 1984-12-06 Fuji Electric Co Ltd 絶縁形信号伝達回路
US5384808A (en) * 1992-12-31 1995-01-24 Apple Computer, Inc. Method and apparatus for transmitting NRZ data signals across an isolation barrier disposed in an interface between adjacent devices on a bus
JP3494504B2 (ja) * 1994-05-31 2004-02-09 株式会社 沖テクノコラージュ 電磁結合形パルス信号再生回路
JP3134991B2 (ja) * 1998-08-05 2001-02-13 日本電気株式会社 ディレィ回路
JP3792408B2 (ja) * 1998-09-01 2006-07-05 セイコーエプソン株式会社 シリアルパラレル変換装置、半導体装置、電子機器及びデータ伝送システム
JP3818216B2 (ja) * 2002-05-17 2006-09-06 ヤマハ株式会社 遅延回路
JP5433199B2 (ja) * 2008-10-21 2014-03-05 学校法人慶應義塾 電子回路
US8947117B2 (en) * 2009-11-05 2015-02-03 Rohm Co., Ltd. Signal transmission circuit device, semiconductor device, method and apparatus for inspecting semiconductor device, signal transmission device, and motor drive apparatus using signal transmission device
WO2014087481A1 (ja) * 2012-12-04 2014-06-12 三菱電機株式会社 信号伝達回路
JP7275071B2 (ja) * 2019-07-31 2023-05-17 株式会社デンソー 信号伝達装置

Also Published As

Publication number Publication date
US20240128975A1 (en) 2024-04-18
WO2022190168A1 (ja) 2022-09-15
JP7019107B1 (ja) 2022-02-14

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