JPWO2022185559A1 - - Google Patents

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Publication number
JPWO2022185559A1
JPWO2022185559A1 JP2022513414A JP2022513414A JPWO2022185559A1 JP WO2022185559 A1 JPWO2022185559 A1 JP WO2022185559A1 JP 2022513414 A JP2022513414 A JP 2022513414A JP 2022513414 A JP2022513414 A JP 2022513414A JP WO2022185559 A1 JPWO2022185559 A1 JP WO2022185559A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022513414A
Other versions
JPWO2022185559A5 (ja
JP7110516B1 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2021/008485 external-priority patent/WO2022185485A1/ja
Application filed filed Critical
Priority to JP2022115860A priority Critical patent/JP7406597B2/ja
Application granted granted Critical
Publication of JP7110516B1 publication Critical patent/JP7110516B1/ja
Publication of JPWO2022185559A1 publication Critical patent/JPWO2022185559A1/ja
Publication of JPWO2022185559A5 publication Critical patent/JPWO2022185559A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/042—Electrodes formed of a single material
    • C25B11/046—Alloys
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/055—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material
    • C25B11/057—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of a single element or compound
    • C25B11/067—Inorganic compound e.g. ITO, silica or titania
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Non-Insulated Conductors (AREA)
JP2022513414A 2021-03-04 2021-07-02 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス Active JP7110516B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022115860A JP7406597B2 (ja) 2021-03-04 2022-07-20 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2021/008485 2021-03-04
PCT/JP2021/008485 WO2022185485A1 (ja) 2021-03-04 2021-03-04 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス
PCT/JP2021/025097 WO2022185559A1 (ja) 2021-03-04 2021-07-02 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022115860A Division JP7406597B2 (ja) 2021-03-04 2022-07-20 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス

Publications (3)

Publication Number Publication Date
JP7110516B1 JP7110516B1 (ja) 2022-08-01
JPWO2022185559A1 true JPWO2022185559A1 (ja) 2022-09-09
JPWO2022185559A5 JPWO2022185559A5 (ja) 2023-02-01

Family

ID=82656893

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022513414A Active JP7110516B1 (ja) 2021-03-04 2021-07-02 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス
JP2022115860A Active JP7406597B2 (ja) 2021-03-04 2022-07-20 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022115860A Active JP7406597B2 (ja) 2021-03-04 2022-07-20 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス

Country Status (4)

Country Link
US (1) US20230025098A1 (ja)
EP (1) EP4303936A1 (ja)
JP (2) JP7110516B1 (ja)
CN (1) CN115315815A (ja)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077092A (en) * 1989-06-30 1991-12-31 Texas Instruments Incorporated Method and apparatus for deposition of zinc sulfide films
JP2924580B2 (ja) * 1993-07-19 1999-07-26 日立電線株式会社 樹脂モールド型化合物半導体光素子及び樹脂モールド型発光ダイオード
JP2858397B2 (ja) * 1994-09-07 1999-02-17 株式会社デンソー エレクトロルミネッセンス素子及びその製造方法
JPH10144944A (ja) * 1996-09-12 1998-05-29 Canon Inc 光起電力素子
JP5385614B2 (ja) * 2005-12-16 2014-01-08 三星ディスプレイ株式會社 光学素子およびその製造方法
CN102509769B (zh) * 2011-10-28 2013-12-04 许昌学院 基于低温制备的Ag2S片状纳米晶阵列与P3HT杂化的薄膜光电转换器件
JP6314463B2 (ja) * 2013-12-11 2018-04-25 コニカミノルタ株式会社 透明導電体
US9505624B2 (en) * 2014-02-18 2016-11-29 Corning Incorporated Metal-free CVD coating of graphene on glass and other dielectric substrates
JP2016152182A (ja) * 2015-02-19 2016-08-22 コニカミノルタ株式会社 透明導電膜、透明導電膜の製造方法、及び、電子機器
CN105925947B (zh) * 2016-05-17 2018-03-20 河北大学 一种纳米多层透明导电薄膜
CN107393979B (zh) * 2017-06-09 2019-07-16 中国科学院宁波材料技术与工程研究所 一种基于超薄金属膜的透明电极及其制备方法和应用
JP2019021599A (ja) * 2017-07-21 2019-02-07 株式会社東芝 透明電極、およびその製造方法、ならびにその透明電極を用いた電子デバイス
JP7181034B2 (ja) * 2018-09-21 2022-11-30 積水化学工業株式会社 掲示板
CN109659439B (zh) * 2018-11-26 2020-04-03 武汉华星光电半导体显示技术有限公司 一种有机电致发光器件及其制备方法

Also Published As

Publication number Publication date
US20230025098A1 (en) 2023-01-26
JP7406597B2 (ja) 2023-12-27
JP7110516B1 (ja) 2022-08-01
CN115315815A (zh) 2022-11-08
EP4303936A1 (en) 2024-01-10
JP2022136143A (ja) 2022-09-15

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