JPWO2022176571A1 - - Google Patents
Info
- Publication number
- JPWO2022176571A1 JPWO2022176571A1 JP2023500687A JP2023500687A JPWO2022176571A1 JP WO2022176571 A1 JPWO2022176571 A1 JP WO2022176571A1 JP 2023500687 A JP2023500687 A JP 2023500687A JP 2023500687 A JP2023500687 A JP 2023500687A JP WO2022176571 A1 JPWO2022176571 A1 JP WO2022176571A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
- C08G8/20—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021022454 | 2021-02-16 | ||
PCT/JP2022/003346 WO2022176571A1 (ja) | 2021-02-16 | 2022-01-28 | 樹脂、組成物、レジストパターン形成方法、回路パターン形成方法及び樹脂の精製方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2022176571A1 true JPWO2022176571A1 (ja) | 2022-08-25 |
Family
ID=82931576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023500687A Pending JPWO2022176571A1 (ja) | 2021-02-16 | 2022-01-28 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20240109997A1 (ja) |
JP (1) | JPWO2022176571A1 (ja) |
KR (1) | KR20230145562A (ja) |
CN (1) | CN116888181A (ja) |
WO (1) | WO2022176571A1 (ja) |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3774668B2 (ja) | 2001-02-07 | 2006-05-17 | 東京エレクトロン株式会社 | シリコン窒化膜形成装置の洗浄前処理方法 |
JP3914493B2 (ja) | 2002-11-27 | 2007-05-16 | 東京応化工業株式会社 | 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法 |
JP4382750B2 (ja) | 2003-01-24 | 2009-12-16 | 東京エレクトロン株式会社 | 被処理基板上にシリコン窒化膜を形成するcvd方法 |
JP3981030B2 (ja) | 2003-03-07 | 2007-09-26 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
JP4388429B2 (ja) | 2004-02-04 | 2009-12-24 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
JP4781280B2 (ja) | 2006-01-25 | 2011-09-28 | 信越化学工業株式会社 | 反射防止膜材料、基板、及びパターン形成方法 |
JP4638380B2 (ja) | 2006-01-27 | 2011-02-23 | 信越化学工業株式会社 | 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法 |
CN103733136B (zh) | 2011-08-12 | 2017-06-23 | 三菱瓦斯化学株式会社 | 光刻用下层膜形成材料、光刻用下层膜及图案形成方法 |
JP5913191B2 (ja) * | 2013-05-08 | 2016-04-27 | 信越化学工業株式会社 | レジスト下層膜形成方法及びパターン形成方法 |
EP3118183B1 (en) * | 2014-03-13 | 2021-07-21 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying the compound or resin |
CN110325501A (zh) * | 2017-02-23 | 2019-10-11 | 三菱瓦斯化学株式会社 | 化合物、树脂、组合物、图案形成方法和纯化方法 |
KR102612701B1 (ko) * | 2017-07-14 | 2023-12-12 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성 조성물, 레지스트 하층막, 레지스트 패턴의 형성방법 및 반도체장치의 제조방법 |
TW202104175A (zh) * | 2019-01-31 | 2021-02-01 | 日商三菱瓦斯化學股份有限公司 | 化合物、樹脂、組成物、阻劑圖型形成方法、回路圖型形成方法及樹脂之純化方法 |
-
2022
- 2022-01-28 US US18/277,366 patent/US20240109997A1/en active Pending
- 2022-01-28 KR KR1020237019107A patent/KR20230145562A/ko unknown
- 2022-01-28 CN CN202280015277.4A patent/CN116888181A/zh active Pending
- 2022-01-28 WO PCT/JP2022/003346 patent/WO2022176571A1/ja active Application Filing
- 2022-01-28 JP JP2023500687A patent/JPWO2022176571A1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2022176571A1 (ja) | 2022-08-25 |
US20240109997A1 (en) | 2024-04-04 |
CN116888181A (zh) | 2023-10-13 |
KR20230145562A (ko) | 2023-10-17 |