JPWO2022162928A1 - - Google Patents

Info

Publication number
JPWO2022162928A1
JPWO2022162928A1 JP2022538113A JP2022538113A JPWO2022162928A1 JP WO2022162928 A1 JPWO2022162928 A1 JP WO2022162928A1 JP 2022538113 A JP2022538113 A JP 2022538113A JP 2022538113 A JP2022538113 A JP 2022538113A JP WO2022162928 A1 JPWO2022162928 A1 JP WO2022162928A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022538113A
Other languages
Japanese (ja)
Other versions
JP7333675B2 (ja
JPWO2022162928A5 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022162928A1 publication Critical patent/JPWO2022162928A1/ja
Publication of JPWO2022162928A5 publication Critical patent/JPWO2022162928A5/ja
Application granted granted Critical
Publication of JP7333675B2 publication Critical patent/JP7333675B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2022538113A 2021-02-01 2021-02-01 リフトピン、半導体製造装置およびリフトピン製造方法 Active JP7333675B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/003466 WO2022162928A1 (ja) 2021-02-01 2021-02-01 リフトピン、半導体製造装置およびリフトピン製造方法

Publications (3)

Publication Number Publication Date
JPWO2022162928A1 true JPWO2022162928A1 (ko) 2022-08-04
JPWO2022162928A5 JPWO2022162928A5 (ko) 2023-01-04
JP7333675B2 JP7333675B2 (ja) 2023-08-25

Family

ID=82653236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022538113A Active JP7333675B2 (ja) 2021-02-01 2021-02-01 リフトピン、半導体製造装置およびリフトピン製造方法

Country Status (4)

Country Link
JP (1) JP7333675B2 (ko)
KR (2) KR102651374B1 (ko)
CN (1) CN115210859A (ko)
WO (1) WO2022162928A1 (ko)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2584997Y2 (ja) * 1992-02-04 1998-11-11 株式会社東京精密 プロービング装置用半導体ウエハステージ
JP3935303B2 (ja) 2000-03-17 2007-06-20 東京エレクトロン株式会社 加熱処理装置
KR100714200B1 (ko) 2000-11-04 2007-05-02 엘지.필립스 엘시디 주식회사 건식식각 장치
JP2003218003A (ja) 2002-01-21 2003-07-31 Toray Ind Inc 基板加熱装置
JP4783762B2 (ja) * 2007-08-31 2011-09-28 東京エレクトロン株式会社 基板載置台および基板処理装置
KR20090130786A (ko) * 2008-06-16 2009-12-24 주식회사 아이피에스 진공처리장치의 리프트장치 및 그 제어방법
KR20130051686A (ko) * 2011-11-10 2013-05-21 엘지디스플레이 주식회사 기판 착탈 장치
CN203434136U (zh) 2013-07-16 2014-02-12 北京北方微电子基地设备工艺研究中心有限责任公司 升针机构和升举装置
JP6435992B2 (ja) 2015-05-29 2018-12-12 株式会社Sumco エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン
KR102262311B1 (ko) 2017-02-02 2021-06-07 가부시키가이샤 사무코 리프트 핀, 당해 리프트 핀을 이용한 에피택셜 성장 장치 및 실리콘 에피택셜 웨이퍼의 제조 방법
US10755955B2 (en) 2018-02-12 2020-08-25 Applied Materials, Inc. Substrate transfer mechanism to reduce back-side substrate contact

Also Published As

Publication number Publication date
JP7333675B2 (ja) 2023-08-25
CN115210859A (zh) 2022-10-18
KR102651374B1 (ko) 2024-03-26
KR20220111681A (ko) 2022-08-09
WO2022162928A1 (ja) 2022-08-04
KR20240042203A (ko) 2024-04-01

Similar Documents

Publication Publication Date Title
BR112023005462A2 (ko)
BR112023012656A2 (ko)
BR102021018859A2 (ko)
BR102021015500A2 (ko)
BR112022009896A2 (ko)
BR102021007058A2 (ko)
BR102020022030A2 (ko)
BR102021020147A2 (ko)
BR102021018926A2 (ko)
BR102021018167A2 (ko)
BR102021016837A2 (ko)
BR102021016551A2 (ko)
BR102021016375A2 (ko)
BR102021016200A2 (ko)
BR102021016176A2 (ko)
BR102021015566A2 (ko)
BR102021014056A2 (ko)
BR102021014044A2 (ko)
BR102021013929A2 (ko)
BR112021017747A2 (ko)
BR102021012571A2 (ko)
BR102021012230A2 (ko)
BR102021012107A2 (ko)
BR102021012003A2 (ko)
BR112021013417A2 (ko)

Legal Events

Date Code Title Description
A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A527

Effective date: 20220617

A529 Written submission of copy of amendment under article 34 pct

Free format text: JAPANESE INTERMEDIATE CODE: A5211

Effective date: 20220617

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220930

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220617

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230801

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230807

R150 Certificate of patent or registration of utility model

Ref document number: 7333675

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150