JPWO2022069986A1 - - Google Patents
Info
- Publication number
- JPWO2022069986A1 JPWO2022069986A1 JP2022553232A JP2022553232A JPWO2022069986A1 JP WO2022069986 A1 JPWO2022069986 A1 JP WO2022069986A1 JP 2022553232 A JP2022553232 A JP 2022553232A JP 2022553232 A JP2022553232 A JP 2022553232A JP WO2022069986 A1 JPWO2022069986 A1 JP WO2022069986A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/10—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020167679 | 2020-10-02 | ||
| PCT/IB2021/058437 WO2022069986A1 (ja) | 2020-10-02 | 2021-09-16 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022069986A1 true JPWO2022069986A1 (ja) | 2022-04-07 |
Family
ID=80951393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022553232A Pending JPWO2022069986A1 (ja) | 2020-10-02 | 2021-09-16 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230320100A1 (ja) |
| JP (1) | JPWO2022069986A1 (ja) |
| KR (1) | KR20230074757A (ja) |
| CN (1) | CN116368602A (ja) |
| WO (1) | WO2022069986A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11978735B2 (en) * | 2022-04-14 | 2024-05-07 | Tokyo Electron Limited | Transistor stack of vertical channel ferroelectric FETs and methods of forming the transistor stack |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014053571A (ja) * | 2012-09-10 | 2014-03-20 | Toshiba Corp | 強誘電体メモリ及びその製造方法 |
| CN104659207B (zh) * | 2013-11-19 | 2019-04-26 | 三星电子株式会社 | 存储装置 |
| JP6693907B2 (ja) | 2017-06-08 | 2020-05-13 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置、及び電子機器 |
| WO2019003060A1 (ja) * | 2017-06-27 | 2019-01-03 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体ウェハ、記憶装置、及び電子機器 |
-
2021
- 2021-09-16 KR KR1020237013586A patent/KR20230074757A/ko unknown
- 2021-09-16 US US18/024,823 patent/US20230320100A1/en active Pending
- 2021-09-16 WO PCT/IB2021/058437 patent/WO2022069986A1/ja active Application Filing
- 2021-09-16 JP JP2022553232A patent/JPWO2022069986A1/ja active Pending
- 2021-09-16 CN CN202180067590.8A patent/CN116368602A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022069986A1 (ja) | 2022-04-07 |
| CN116368602A (zh) | 2023-06-30 |
| US20230320100A1 (en) | 2023-10-05 |
| KR20230074757A (ko) | 2023-05-31 |