JPWO2022059244A1 - - Google Patents

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Publication number
JPWO2022059244A1
JPWO2022059244A1 JP2021551577A JP2021551577A JPWO2022059244A1 JP WO2022059244 A1 JPWO2022059244 A1 JP WO2022059244A1 JP 2021551577 A JP2021551577 A JP 2021551577A JP 2021551577 A JP2021551577 A JP 2021551577A JP WO2022059244 A1 JPWO2022059244 A1 JP WO2022059244A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021551577A
Other languages
Japanese (ja)
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JP6978641B1 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Priority claimed from PCT/JP2021/016074 external-priority patent/WO2022059244A1/en
Application granted granted Critical
Publication of JP6978641B1 publication Critical patent/JP6978641B1/en
Publication of JPWO2022059244A1 publication Critical patent/JPWO2022059244A1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP2021551577A 2020-09-17 2021-04-20 Group III element nitride semiconductor substrate Active JP6978641B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020156017 2020-09-17
JP2020156017 2020-09-17
PCT/JP2021/016074 WO2022059244A1 (en) 2020-09-17 2021-04-20 Group iii nitride semiconductor substrate

Publications (2)

Publication Number Publication Date
JP6978641B1 JP6978641B1 (en) 2021-12-08
JPWO2022059244A1 true JPWO2022059244A1 (en) 2022-03-24

Family

ID=78815598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021551577A Active JP6978641B1 (en) 2020-09-17 2021-04-20 Group III element nitride semiconductor substrate

Country Status (4)

Country Link
US (1) US11862689B2 (en)
JP (1) JP6978641B1 (en)
CN (1) CN116034186A (en)
DE (1) DE112021003545T5 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023127454A1 (en) * 2021-12-27 2023-07-06 株式会社トクヤマ Method for producing group iii nitride single crystal substrate and aluminum nitride single crystal substrate

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256195A (en) * 1997-03-12 1998-09-25 Toshiba Microelectron Corp Silicon wafer
JP2873285B1 (en) * 1998-02-05 1999-03-24 株式会社ジャパンエナジー Semiconductor wafer
JP2001203177A (en) * 2000-01-18 2001-07-27 Hitachi Cable Ltd Semiconductor wafer
US7118813B2 (en) * 2003-11-14 2006-10-10 Cree, Inc. Vicinal gallium nitride substrate for high quality homoepitaxy
US7045808B2 (en) 2003-12-26 2006-05-16 Hitachi Cable, Ltd. III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method
JP4359770B2 (en) 2003-12-26 2009-11-04 日立電線株式会社 III-V nitride semiconductor substrate and production lot thereof
JP4691911B2 (en) * 2004-06-11 2011-06-01 日立電線株式会社 III-V nitride semiconductor free-standing substrate manufacturing method
JP4696886B2 (en) 2005-12-08 2011-06-08 日立電線株式会社 Method for manufacturing self-supporting gallium nitride single crystal substrate and method for manufacturing nitride semiconductor device
JP4930081B2 (en) * 2006-04-03 2012-05-09 住友電気工業株式会社 GaN crystal substrate
JP5433567B2 (en) * 2008-04-01 2014-03-05 信越化学工業株式会社 Manufacturing method of SOI substrate
JP2009286652A (en) * 2008-05-28 2009-12-10 Sumitomo Electric Ind Ltd Group iii nitride crystal, group iii nitride crystal substrate, and production method of semiconductor device
US7977216B2 (en) 2008-09-29 2011-07-12 Magnachip Semiconductor, Ltd. Silicon wafer and fabrication method thereof
KR20100036155A (en) * 2008-09-29 2010-04-07 매그나칩 반도체 유한회사 Silicon wafer and fabrication method thereof
JP5040977B2 (en) * 2009-09-24 2012-10-03 住友電気工業株式会社 Nitride semiconductor substrate, semiconductor device and manufacturing method thereof
JP5471387B2 (en) * 2009-12-09 2014-04-16 三菱化学株式会社 Group III nitride crystal semiconductor substrate manufacturing method and group III nitride crystal semiconductor substrate
JP5737189B2 (en) * 2010-01-15 2015-06-17 三菱化学株式会社 Single crystal substrate, group III nitride crystal obtained using the same, and method for producing group III nitride crystal
US9105472B2 (en) * 2010-04-13 2015-08-11 Namiki Seimitsu Houseki Kabushiki Kaisha Single-crystal substrate,single-crystal substrate having crystalline film,crystalline film,method for producing single-crystal substrate having crystalline film,method for producing crystalline substrate,and method for producing element
JPWO2011161975A1 (en) * 2010-06-25 2013-08-19 Ｄｏｗａエレクトロニクス株式会社 Epitaxial growth substrate, semiconductor device, and epitaxial growth method
JP5757088B2 (en) * 2011-01-05 2015-07-29 株式会社Sumco Epitaxial wafer manufacturing method, epitaxial wafer
JP2014187110A (en) * 2013-03-22 2014-10-02 Furukawa Electric Co Ltd:The Method for manufacturing semiconductor wafer and semiconductor wafer
JP5796642B2 (en) 2014-01-24 2015-10-21 三菱化学株式会社 Group III nitride crystal semiconductor substrate manufacturing method and group III nitride crystal semiconductor substrate
US20160329419A1 (en) * 2014-01-31 2016-11-10 Sharp Kabushiki Kaisha Nitride semiconductor layered body, method for manufacturing the same, and nitride semiconductor device
JP6315579B2 (en) * 2014-07-28 2018-04-25 昭和電工株式会社 Method for manufacturing SiC epitaxial wafer
US11101404B2 (en) 2018-03-26 2021-08-24 Nichia Corporation Method for manufacturing semiconductor device and semiconductor device
JP2019176124A (en) * 2018-03-26 2019-10-10 日亜化学工業株式会社 Method of manufacturing semiconductor device and semiconductor device

Also Published As

Publication number Publication date
CN116034186A (en) 2023-04-28
JP6978641B1 (en) 2021-12-08
US11862689B2 (en) 2024-01-02
US20230282711A1 (en) 2023-09-07
DE112021003545T5 (en) 2023-04-20

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