JPWO2022050099A1 - - Google Patents
Info
- Publication number
- JPWO2022050099A1 JPWO2022050099A1 JP2022546240A JP2022546240A JPWO2022050099A1 JP WO2022050099 A1 JPWO2022050099 A1 JP WO2022050099A1 JP 2022546240 A JP2022546240 A JP 2022546240A JP 2022546240 A JP2022546240 A JP 2022546240A JP WO2022050099 A1 JPWO2022050099 A1 JP WO2022050099A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020146816 | 2020-09-01 | ||
| PCT/JP2021/030739 WO2022050099A1 (ja) | 2020-09-01 | 2021-08-23 | エッチング方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022050099A1 true JPWO2022050099A1 (ja) | 2022-03-10 |
Family
ID=80490882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022546240A Pending JPWO2022050099A1 (ja) | 2020-09-01 | 2021-08-23 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240030037A1 (ja) |
| JP (1) | JPWO2022050099A1 (ja) |
| KR (1) | KR20230057348A (ja) |
| CN (1) | CN116210072A (ja) |
| TW (1) | TW202224003A (ja) |
| WO (1) | WO2022050099A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL311977A (en) | 2021-10-19 | 2024-06-01 | Merck Patent Gmbh | Selective atomic thermal etching |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004091829A (ja) * | 2002-08-30 | 2004-03-25 | Tokyo Electron Ltd | エッチング方法及びエッチング装置 |
| US8828883B2 (en) | 2010-08-24 | 2014-09-09 | Micron Technology, Inc. | Methods and apparatuses for energetic neutral flux generation for processing a substrate |
| US9431268B2 (en) * | 2015-01-05 | 2016-08-30 | Lam Research Corporation | Isotropic atomic layer etch for silicon and germanium oxides |
| US10283369B2 (en) | 2016-08-10 | 2019-05-07 | Tokyo Electron Limited | Atomic layer etching using a boron-containing gas and hydrogen fluoride gas |
| KR102410571B1 (ko) * | 2016-12-09 | 2022-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 열적 원자층 식각 공정 |
| US10832909B2 (en) | 2017-04-24 | 2020-11-10 | Lam Research Corporation | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
-
2021
- 2021-08-23 JP JP2022546240A patent/JPWO2022050099A1/ja active Pending
- 2021-08-23 KR KR1020237005410A patent/KR20230057348A/ko unknown
- 2021-08-23 CN CN202180053507.1A patent/CN116210072A/zh active Pending
- 2021-08-23 WO PCT/JP2021/030739 patent/WO2022050099A1/ja active Application Filing
- 2021-08-23 US US18/023,158 patent/US20240030037A1/en active Pending
- 2021-08-30 TW TW110132001A patent/TW202224003A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN116210072A (zh) | 2023-06-02 |
| KR20230057348A (ko) | 2023-04-28 |
| US20240030037A1 (en) | 2024-01-25 |
| TW202224003A (zh) | 2022-06-16 |
| WO2022050099A1 (ja) | 2022-03-10 |