JPWO2022004393A1 - - Google Patents

Info

Publication number
JPWO2022004393A1
JPWO2022004393A1 JP2022533838A JP2022533838A JPWO2022004393A1 JP WO2022004393 A1 JPWO2022004393 A1 JP WO2022004393A1 JP 2022533838 A JP2022533838 A JP 2022533838A JP 2022533838 A JP2022533838 A JP 2022533838A JP WO2022004393 A1 JPWO2022004393 A1 JP WO2022004393A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022533838A
Other versions
JPWO2022004393A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022004393A1 publication Critical patent/JPWO2022004393A1/ja
Publication of JPWO2022004393A5 publication Critical patent/JPWO2022004393A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
JP2022533838A 2020-07-02 2021-06-16 Pending JPWO2022004393A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020115021 2020-07-02
PCT/JP2021/022901 WO2022004393A1 (ja) 2020-07-02 2021-06-16 窒化物半導体発光素子

Publications (2)

Publication Number Publication Date
JPWO2022004393A1 true JPWO2022004393A1 (ja) 2022-01-06
JPWO2022004393A5 JPWO2022004393A5 (ja) 2023-03-15

Family

ID=79316058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022533838A Pending JPWO2022004393A1 (ja) 2020-07-02 2021-06-16

Country Status (3)

Country Link
US (1) US20230121327A1 (ja)
JP (1) JPWO2022004393A1 (ja)
WO (1) WO2022004393A1 (ja)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243709A (ja) * 2002-02-15 2003-08-29 Matsushita Electric Works Ltd 半導体発光素子
US6958498B2 (en) * 2002-09-27 2005-10-25 Emcore Corporation Optimized contact design for flip-chip LED
KR100576853B1 (ko) * 2003-12-18 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자
JP2006066868A (ja) * 2004-03-23 2006-03-09 Toyoda Gosei Co Ltd 固体素子および固体素子デバイス
JP4630629B2 (ja) * 2004-10-29 2011-02-09 豊田合成株式会社 発光装置の製造方法
KR100988041B1 (ko) * 2008-05-15 2010-10-18 주식회사 에피밸리 반도체 발광소자
US7875984B2 (en) * 2009-03-04 2011-01-25 Koninklijke Philips Electronics N.V. Complaint bonding structures for semiconductor devices
FR3062954A1 (fr) * 2017-02-15 2018-08-17 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode a injection electrique amelioree

Also Published As

Publication number Publication date
WO2022004393A1 (ja) 2022-01-06
US20230121327A1 (en) 2023-04-20

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221221