JPWO2022004393A1 - - Google Patents

Info

Publication number
JPWO2022004393A1
JPWO2022004393A1 JP2022533838A JP2022533838A JPWO2022004393A1 JP WO2022004393 A1 JPWO2022004393 A1 JP WO2022004393A1 JP 2022533838 A JP2022533838 A JP 2022533838A JP 2022533838 A JP2022533838 A JP 2022533838A JP WO2022004393 A1 JPWO2022004393 A1 JP WO2022004393A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022533838A
Other languages
Japanese (ja)
Other versions
JPWO2022004393A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022004393A1 publication Critical patent/JPWO2022004393A1/ja
Publication of JPWO2022004393A5 publication Critical patent/JPWO2022004393A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
JP2022533838A 2020-07-02 2021-06-16 Pending JPWO2022004393A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020115021 2020-07-02
PCT/JP2021/022901 WO2022004393A1 (ja) 2020-07-02 2021-06-16 窒化物半導体発光素子

Publications (2)

Publication Number Publication Date
JPWO2022004393A1 true JPWO2022004393A1 (https=) 2022-01-06
JPWO2022004393A5 JPWO2022004393A5 (https=) 2023-03-15

Family

ID=79316058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022533838A Pending JPWO2022004393A1 (https=) 2020-07-02 2021-06-16

Country Status (3)

Country Link
US (1) US20230121327A1 (https=)
JP (1) JPWO2022004393A1 (https=)
WO (1) WO2022004393A1 (https=)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002319704A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Ｌｅｄチップ
JP2003243709A (ja) * 2002-02-15 2003-08-29 Matsushita Electric Works Ltd 半導体発光素子
JP2004071644A (ja) * 2002-08-01 2004-03-04 Nichia Chem Ind Ltd 窒化物半導体発光素子
US20040061123A1 (en) * 2002-09-27 2004-04-01 Emcore Corporation Optimized contact design for flip-chip LED
JP2005183910A (ja) * 2003-12-18 2005-07-07 Samsung Electro Mech Co Ltd 窒化物半導体発光素子
JP2006066868A (ja) * 2004-03-23 2006-03-09 Toyoda Gosei Co Ltd 固体素子および固体素子デバイス
JP2006128457A (ja) * 2004-10-29 2006-05-18 Toyoda Gosei Co Ltd 発光素子および発光装置
JP2006261266A (ja) * 2005-03-16 2006-09-28 Sharp Corp 半導体発光素子およびその製造方法並びに電子機器
JP2009278056A (ja) * 2008-05-15 2009-11-26 Epivalley Co Ltd 半導体発光素子
JP2011066048A (ja) * 2009-09-15 2011-03-31 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
US20110114987A1 (en) * 2009-03-04 2011-05-19 Koninklijke Philips Electronics N.V. Compliant bonding structures for semiconductor devices
US20180233628A1 (en) * 2017-02-15 2018-08-16 Commissariat à I'Énegie Atomique et aux Énergies Alternatives Diode with an improved electric current injection

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002319704A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Ｌｅｄチップ
JP2003243709A (ja) * 2002-02-15 2003-08-29 Matsushita Electric Works Ltd 半導体発光素子
JP2004071644A (ja) * 2002-08-01 2004-03-04 Nichia Chem Ind Ltd 窒化物半導体発光素子
US20040061123A1 (en) * 2002-09-27 2004-04-01 Emcore Corporation Optimized contact design for flip-chip LED
JP2005183910A (ja) * 2003-12-18 2005-07-07 Samsung Electro Mech Co Ltd 窒化物半導体発光素子
JP2006066868A (ja) * 2004-03-23 2006-03-09 Toyoda Gosei Co Ltd 固体素子および固体素子デバイス
JP2006128457A (ja) * 2004-10-29 2006-05-18 Toyoda Gosei Co Ltd 発光素子および発光装置
JP2006261266A (ja) * 2005-03-16 2006-09-28 Sharp Corp 半導体発光素子およびその製造方法並びに電子機器
JP2009278056A (ja) * 2008-05-15 2009-11-26 Epivalley Co Ltd 半導体発光素子
US20110114987A1 (en) * 2009-03-04 2011-05-19 Koninklijke Philips Electronics N.V. Compliant bonding structures for semiconductor devices
JP2011066048A (ja) * 2009-09-15 2011-03-31 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
US20180233628A1 (en) * 2017-02-15 2018-08-16 Commissariat à I'Énegie Atomique et aux Énergies Alternatives Diode with an improved electric current injection

Also Published As

Publication number Publication date
WO2022004393A1 (ja) 2022-01-06
US20230121327A1 (en) 2023-04-20

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