JPWO2021261093A1 - - Google Patents

Info

Publication number
JPWO2021261093A1
JPWO2021261093A1 JP2022532379A JP2022532379A JPWO2021261093A1 JP WO2021261093 A1 JPWO2021261093 A1 JP WO2021261093A1 JP 2022532379 A JP2022532379 A JP 2022532379A JP 2022532379 A JP2022532379 A JP 2022532379A JP WO2021261093 A1 JPWO2021261093 A1 JP WO2021261093A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022532379A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021261093A1 publication Critical patent/JPWO2021261093A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2022532379A 2020-06-24 2021-05-07 Pending JPWO2021261093A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020108372 2020-06-24
PCT/JP2021/017542 WO2021261093A1 (ja) 2020-06-24 2021-05-07 半導体装置及び電子機器

Publications (1)

Publication Number Publication Date
JPWO2021261093A1 true JPWO2021261093A1 (ja) 2021-12-30

Family

ID=79282321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022532379A Pending JPWO2021261093A1 (ja) 2020-06-24 2021-05-07

Country Status (5)

Country Link
US (1) US20230238405A1 (ja)
JP (1) JPWO2021261093A1 (ja)
CN (1) CN115552609A (ja)
DE (1) DE112021003352T5 (ja)
WO (1) WO2021261093A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230065063A1 (en) * 2021-08-24 2023-03-02 Globalfoundries Singapore Pte. Ltd. Single-photon avalanche diodes with deep trench isolation
CN114628424A (zh) * 2021-12-31 2022-06-14 宁波芯辉科技有限公司 一种单光子雪崩二极管
WO2023248346A1 (ja) * 2022-06-21 2023-12-28 ソニーセミコンダクタソリューションズ株式会社 撮像装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3441101B2 (ja) * 1993-02-12 2003-08-25 浜松ホトニクス株式会社 電子管
JP2001007381A (ja) * 1999-06-24 2001-01-12 Nippon Hoso Kyokai <Nhk> 光電変換膜とその作製方法
CN100505321C (zh) * 2004-05-27 2009-06-24 佛文恩股份有限公司 含非晶硅半导体的垂直滤色片传感器组及其制造方法
JP5369362B2 (ja) * 2005-03-01 2013-12-18 ソニー株式会社 物理情報取得装置およびその製造方法
JP5609119B2 (ja) * 2009-01-21 2014-10-22 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
JP5585232B2 (ja) * 2010-06-18 2014-09-10 ソニー株式会社 固体撮像装置、電子機器
JP6303803B2 (ja) * 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
TWI785618B (zh) * 2016-01-27 2022-12-01 日商新力股份有限公司 固體攝像元件及電子機器
JP2017174936A (ja) * 2016-03-23 2017-09-28 ソニー株式会社 固体撮像素子及び電子機器
JP7058479B2 (ja) 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器
JP7169071B2 (ja) * 2018-02-06 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器

Also Published As

Publication number Publication date
US20230238405A1 (en) 2023-07-27
CN115552609A (zh) 2022-12-30
WO2021261093A1 (ja) 2021-12-30
DE112021003352T5 (de) 2023-04-13

Similar Documents

Publication Publication Date Title
BR112023005462A2 (ja)
BR112023012656A2 (ja)
BR112021014123A2 (ja)
JPWO2021261093A1 (ja)
BR112022009896A2 (ja)
BR112023009656A2 (ja)
BR112022024743A2 (ja)
BR112023006729A2 (ja)
BR102021007058A2 (ja)
BR112023008622A2 (ja)
BR102020022030A2 (ja)
BR112023011738A2 (ja)
BR112023016292A2 (ja)
BR112023004146A2 (ja)
BR112023011610A2 (ja)
BR112023011539A2 (ja)
BR112023008976A2 (ja)
BR102021020147A2 (ja)
BR102021015450A8 (ja)
BR102021015220A2 (ja)
BR102021015247A2 (ja)
BR102021014044A2 (ja)
BR102021014056A2 (ja)
BR102021013929A2 (ja)
BR112021017747A2 (ja)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240321