JPWO2021261069A1 - - Google Patents

Info

Publication number
JPWO2021261069A1
JPWO2021261069A1 JP2022532351A JP2022532351A JPWO2021261069A1 JP WO2021261069 A1 JPWO2021261069 A1 JP WO2021261069A1 JP 2022532351 A JP2022532351 A JP 2022532351A JP 2022532351 A JP2022532351 A JP 2022532351A JP WO2021261069 A1 JPWO2021261069 A1 JP WO2021261069A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022532351A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021261069A1 publication Critical patent/JPWO2021261069A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/573—Control of the dynamic range involving a non-linear response the logarithmic type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/47—Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/707—Pixels for event detection
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2022532351A 2020-06-26 2021-04-23 Pending JPWO2021261069A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020110956 2020-06-26
JP2021052370 2021-03-25
PCT/JP2021/016555 WO2021261069A1 (ja) 2020-06-26 2021-04-23 固体撮像装置

Publications (1)

Publication Number Publication Date
JPWO2021261069A1 true JPWO2021261069A1 (ja) 2021-12-30

Family

ID=79282433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022532351A Pending JPWO2021261069A1 (ja) 2020-06-26 2021-04-23

Country Status (7)

Country Link
US (1) US20230247314A1 (ja)
EP (1) EP4175288A4 (ja)
JP (1) JPWO2021261069A1 (ja)
KR (1) KR20230028422A (ja)
CN (1) CN115715468A (ja)
DE (1) DE112021003422T5 (ja)
WO (1) WO2021261069A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022188985A (ja) * 2021-06-10 2022-12-22 キヤノン株式会社 情報処理装置、情報処理方法およびプログラム
US12003870B2 (en) 2022-04-15 2024-06-04 Sony Semiconductor Solutions Corporation Binning in hybrid pixel structure of image pixels and event vision sensor (EVS) pixels
WO2024018812A1 (ja) * 2022-07-19 2024-01-25 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
WO2024034352A1 (ja) * 2022-08-10 2024-02-15 ソニーセミコンダクタソリューションズ株式会社 光検出素子、電子機器、及び、光検出素子の製造方法
WO2024185362A1 (ja) * 2023-03-09 2024-09-12 ソニーセミコンダクタソリューションズ株式会社 光検出素子および電子機器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244587B2 (ja) 1974-05-02 1977-11-09
JP5244587B2 (ja) 2005-06-03 2013-07-24 ウニヴェルズィテート チューリッヒ 時間依存性の画像データを検出するフォトアレイ
KR102641558B1 (ko) * 2016-03-04 2024-02-28 소니그룹주식회사 고체 촬상 소자, 구동 방법, 및 전자 기기
US10348994B2 (en) * 2017-04-06 2019-07-09 Samsung Electronics Co., Ltd. Intensity image acquisition from dynamic vision sensors
JP2019134271A (ja) * 2018-01-31 2019-08-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
WO2019239722A1 (ja) * 2018-06-12 2019-12-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
JP2022002355A (ja) * 2018-09-28 2022-01-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の制御方法および電子機器
JP2020072317A (ja) * 2018-10-30 2020-05-07 ソニーセミコンダクタソリューションズ株式会社 センサ及び制御方法
JP2020088722A (ja) * 2018-11-29 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
CN112369012B (zh) * 2018-12-18 2024-04-12 索尼半导体解决方案公司 图像传感器、记录设备以及复位方法

Also Published As

Publication number Publication date
KR20230028422A (ko) 2023-02-28
US20230247314A1 (en) 2023-08-03
WO2021261069A1 (ja) 2021-12-30
CN115715468A (zh) 2023-02-24
DE112021003422T5 (de) 2023-04-27
EP4175288A1 (en) 2023-05-03
EP4175288A4 (en) 2023-06-21

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Effective date: 20240410