JPWO2021260841A1 - - Google Patents

Info

Publication number
JPWO2021260841A1
JPWO2021260841A1 JP2021505941A JP2021505941A JPWO2021260841A1 JP WO2021260841 A1 JPWO2021260841 A1 JP WO2021260841A1 JP 2021505941 A JP2021505941 A JP 2021505941A JP 2021505941 A JP2021505941 A JP 2021505941A JP WO2021260841 A1 JPWO2021260841 A1 JP WO2021260841A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021505941A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021260841A1 publication Critical patent/JPWO2021260841A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/811Interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
JP2021505941A 2020-06-24 2020-06-24 Pending JPWO2021260841A1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/024809 WO2021260841A1 (ja) 2020-06-24 2020-06-24 光半導体アレイ及び光半導体アレイの製造方法

Publications (1)

Publication Number Publication Date
JPWO2021260841A1 true JPWO2021260841A1 (enExample) 2021-12-30

Family

ID=79282093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021505941A Pending JPWO2021260841A1 (enExample) 2020-06-24 2020-06-24

Country Status (3)

Country Link
US (1) US12490540B2 (enExample)
JP (1) JPWO2021260841A1 (enExample)
WO (1) WO2021260841A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021260841A1 (enExample) * 2020-06-24 2021-12-30

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0237746A (ja) * 1988-07-28 1990-02-07 Fujitsu Ltd 半導体装置
JP2005079202A (ja) * 2003-08-28 2005-03-24 Matsushita Electric Ind Co Ltd 半導体発光装置、発光モジュール、照明装置、および半導体発光装置の製造方法
JP2007157969A (ja) * 2005-12-05 2007-06-21 Rohm Co Ltd 半導体発光素子
JP2014165224A (ja) * 2013-02-21 2014-09-08 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置および光半導体装置の製造方法
JP2016025095A (ja) * 2014-07-16 2016-02-08 三菱電機株式会社 受光素子

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144278A (ja) * 1999-11-12 2001-05-25 Nippon Sheet Glass Co Ltd 受光素子アレイ
JP2003249675A (ja) * 2002-02-26 2003-09-05 Sumitomo Electric Ind Ltd 受光素子アレイ
US8686529B2 (en) * 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
CN101865375B (zh) 2005-06-28 2013-03-13 首尔Opto仪器股份有限公司 发光装置
JP2011258691A (ja) * 2010-06-08 2011-12-22 Kyosemi Corp 受光素子アレイ
KR102087935B1 (ko) 2012-12-27 2020-03-11 엘지이노텍 주식회사 발광 소자
JP6221236B2 (ja) 2013-01-17 2017-11-01 株式会社リコー 面発光レーザアレイ及びその製造方法
US10522582B2 (en) * 2015-10-05 2019-12-31 Sony Semiconductor Solutions Corporation Imaging apparatus
JP6837877B2 (ja) 2017-03-14 2021-03-03 シャープ株式会社 太陽電池アレイの製造方法および太陽電池アレイ
JPWO2021260841A1 (enExample) * 2020-06-24 2021-12-30

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0237746A (ja) * 1988-07-28 1990-02-07 Fujitsu Ltd 半導体装置
JP2005079202A (ja) * 2003-08-28 2005-03-24 Matsushita Electric Ind Co Ltd 半導体発光装置、発光モジュール、照明装置、および半導体発光装置の製造方法
JP2007157969A (ja) * 2005-12-05 2007-06-21 Rohm Co Ltd 半導体発光素子
JP2014165224A (ja) * 2013-02-21 2014-09-08 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置および光半導体装置の製造方法
JP2016025095A (ja) * 2014-07-16 2016-02-08 三菱電機株式会社 受光素子

Also Published As

Publication number Publication date
US12490540B2 (en) 2025-12-02
WO2021260841A1 (ja) 2021-12-30
US20230215895A1 (en) 2023-07-06

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