JPWO2021260841A1 - - Google Patents

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Publication number
JPWO2021260841A1
JPWO2021260841A1 JP2021505941A JP2021505941A JPWO2021260841A1 JP WO2021260841 A1 JPWO2021260841 A1 JP WO2021260841A1 JP 2021505941 A JP2021505941 A JP 2021505941A JP 2021505941 A JP2021505941 A JP 2021505941A JP WO2021260841 A1 JPWO2021260841 A1 JP WO2021260841A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021505941A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021260841A1 publication Critical patent/JPWO2021260841A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
JP2021505941A 2020-06-24 2020-06-24 Pending JPWO2021260841A1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/024809 WO2021260841A1 (ja) 2020-06-24 2020-06-24 光半導体アレイ及び光半導体アレイの製造方法

Publications (1)

Publication Number Publication Date
JPWO2021260841A1 true JPWO2021260841A1 (ja) 2021-12-30

Family

ID=79282093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021505941A Pending JPWO2021260841A1 (ja) 2020-06-24 2020-06-24

Country Status (3)

Country Link
US (1) US20230215895A1 (ja)
JP (1) JPWO2021260841A1 (ja)
WO (1) WO2021260841A1 (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0237746A (ja) * 1988-07-28 1990-02-07 Fujitsu Ltd 半導体装置
JP2005079202A (ja) * 2003-08-28 2005-03-24 Matsushita Electric Ind Co Ltd 半導体発光装置、発光モジュール、照明装置、および半導体発光装置の製造方法
JP2007157969A (ja) * 2005-12-05 2007-06-21 Rohm Co Ltd 半導体発光素子
JP2014165224A (ja) * 2013-02-21 2014-09-08 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置および光半導体装置の製造方法
JP2016025095A (ja) * 2014-07-16 2016-02-08 三菱電機株式会社 受光素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144278A (ja) * 1999-11-12 2001-05-25 Nippon Sheet Glass Co Ltd 受光素子アレイ
JP2003249675A (ja) * 2002-02-26 2003-09-05 Sumitomo Electric Ind Ltd 受光素子アレイ
US8686529B2 (en) * 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
JP2011258691A (ja) * 2010-06-08 2011-12-22 Kyosemi Corp 受光素子アレイ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0237746A (ja) * 1988-07-28 1990-02-07 Fujitsu Ltd 半導体装置
JP2005079202A (ja) * 2003-08-28 2005-03-24 Matsushita Electric Ind Co Ltd 半導体発光装置、発光モジュール、照明装置、および半導体発光装置の製造方法
JP2007157969A (ja) * 2005-12-05 2007-06-21 Rohm Co Ltd 半導体発光素子
JP2014165224A (ja) * 2013-02-21 2014-09-08 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置および光半導体装置の製造方法
JP2016025095A (ja) * 2014-07-16 2016-02-08 三菱電機株式会社 受光素子

Also Published As

Publication number Publication date
US20230215895A1 (en) 2023-07-06
WO2021260841A1 (ja) 2021-12-30

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