JPWO2021186562A1 - - Google Patents

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Publication number
JPWO2021186562A1
JPWO2021186562A1 JP2022508665A JP2022508665A JPWO2021186562A1 JP WO2021186562 A1 JPWO2021186562 A1 JP WO2021186562A1 JP 2022508665 A JP2022508665 A JP 2022508665A JP 2022508665 A JP2022508665 A JP 2022508665A JP WO2021186562 A1 JPWO2021186562 A1 JP WO2021186562A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2022508665A
Other versions
JPWO2021186562A5 (ja
JP7529764B2 (ja
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Publication of JPWO2021186562A1 publication Critical patent/JPWO2021186562A1/ja
Publication of JPWO2021186562A5 publication Critical patent/JPWO2021186562A5/ja
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Publication of JP7529764B2 publication Critical patent/JP7529764B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2022508665A 2020-03-17 2020-03-17 基板処理装置、半導体装置の製造方法及びプログラム Active JP7529764B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/011754 WO2021186562A1 (ja) 2020-03-17 2020-03-17 基板処理装置、半導体装置の製造方法及びプログラム

Publications (3)

Publication Number Publication Date
JPWO2021186562A1 true JPWO2021186562A1 (ja) 2021-09-23
JPWO2021186562A5 JPWO2021186562A5 (ja) 2022-07-27
JP7529764B2 JP7529764B2 (ja) 2024-08-06

Family

ID=77770981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022508665A Active JP7529764B2 (ja) 2020-03-17 2020-03-17 基板処理装置、半導体装置の製造方法及びプログラム

Country Status (3)

Country Link
JP (1) JP7529764B2 (ja)
TW (1) TWI775328B (ja)
WO (1) WO2021186562A1 (ja)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0964028A (ja) * 1995-08-25 1997-03-07 Toshiba Corp 半導体装置の製造方法および製造装置
JP2006274316A (ja) * 2005-03-28 2006-10-12 Hitachi Kokusai Electric Inc 基板処理装置
JP2012237026A (ja) * 2011-05-10 2012-12-06 Tokyo Electron Ltd 成膜装置
JP2013084895A (ja) * 2011-09-29 2013-05-09 Mitsubishi Electric Corp 基板処理装置、基板処理方法、及び太陽電池の製造方法
JP2017212466A (ja) * 2012-03-28 2017-11-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ シームレスのコバルト間隙充填を可能にする方法
JP2018070906A (ja) * 2016-10-24 2018-05-10 東京エレクトロン株式会社 処理装置及びカバー部材

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907188A (en) * 1995-08-25 1999-05-25 Kabushiki Kaisha Toshiba Semiconductor device with conductive oxidation preventing film and method for manufacturing the same
US6869641B2 (en) * 2002-07-03 2005-03-22 Unaxis Balzers Ltd. Method and apparatus for ALD on a rotary susceptor
JP2015195312A (ja) * 2014-03-31 2015-11-05 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP6704008B2 (ja) * 2018-03-26 2020-06-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0964028A (ja) * 1995-08-25 1997-03-07 Toshiba Corp 半導体装置の製造方法および製造装置
JP2006274316A (ja) * 2005-03-28 2006-10-12 Hitachi Kokusai Electric Inc 基板処理装置
JP2012237026A (ja) * 2011-05-10 2012-12-06 Tokyo Electron Ltd 成膜装置
JP2013084895A (ja) * 2011-09-29 2013-05-09 Mitsubishi Electric Corp 基板処理装置、基板処理方法、及び太陽電池の製造方法
JP2017212466A (ja) * 2012-03-28 2017-11-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ シームレスのコバルト間隙充填を可能にする方法
JP2018070906A (ja) * 2016-10-24 2018-05-10 東京エレクトロン株式会社 処理装置及びカバー部材

Also Published As

Publication number Publication date
TWI775328B (zh) 2022-08-21
TW202205477A (zh) 2022-02-01
WO2021186562A1 (ja) 2021-09-23
JP7529764B2 (ja) 2024-08-06

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