JPWO2021162111A1 - - Google Patents

Info

Publication number
JPWO2021162111A1
JPWO2021162111A1 JP2022500481A JP2022500481A JPWO2021162111A1 JP WO2021162111 A1 JPWO2021162111 A1 JP WO2021162111A1 JP 2022500481 A JP2022500481 A JP 2022500481A JP 2022500481 A JP2022500481 A JP 2022500481A JP WO2021162111 A1 JPWO2021162111 A1 JP WO2021162111A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022500481A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2020/005602 external-priority patent/WO2021161462A1/ja
Application filed filed Critical
Publication of JPWO2021162111A1 publication Critical patent/JPWO2021162111A1/ja
Priority to JP2023136407A priority Critical patent/JP2023164473A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Disintegrating Or Milling (AREA)
JP2022500481A 2020-02-13 2021-02-12 Pending JPWO2021162111A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023136407A JP2023164473A (ja) 2020-02-13 2023-08-24 Ｃｍｐ研磨液及び研磨方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP2020/005602 WO2021161462A1 (ja) 2020-02-13 2020-02-13 Ｃｍｐ研磨液及び研磨方法
JP2020085178 2020-05-14
PCT/JP2021/005328 WO2021162111A1 (ja) 2020-02-13 2021-02-12 Ｃｍｐ研磨液及び研磨方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023136407A Division JP2023164473A (ja) 2020-02-13 2023-08-24 Ｃｍｐ研磨液及び研磨方法

Publications (1)

Publication Number Publication Date
JPWO2021162111A1 true JPWO2021162111A1 (ja) 2021-08-19

Family

ID=77292295

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022500481A Pending JPWO2021162111A1 (ja) 2020-02-13 2021-02-12
JP2023136407A Pending JP2023164473A (ja) 2020-02-13 2023-08-24 Ｃｍｐ研磨液及び研磨方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023136407A Pending JP2023164473A (ja) 2020-02-13 2023-08-24 Ｃｍｐ研磨液及び研磨方法

Country Status (6)

Country Link
US (1) US20230054199A1 (ja)
JP (2) JPWO2021162111A1 (ja)
KR (1) KR20220066969A (ja)
CN (1) CN114729258A (ja)
TW (1) TWI801810B (ja)
WO (1) WO2021162111A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230166689A (ko) 2022-05-31 2023-12-07 에스엘 주식회사 차량용 램프
WO2024089850A1 (ja) * 2022-10-27 2024-05-02 株式会社レゾナック 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005518091A (ja) * 2002-02-11 2005-06-16 キャボット マイクロエレクトロニクス コーポレイション Ｃｍｐのための正電荷高分子電解質で処理したアニオン性研磨粒子
JP2011254067A (ja) * 2010-05-07 2011-12-15 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及びこれを用いた研磨方法
WO2012103091A2 (en) * 2011-01-24 2012-08-02 Clarkson University Abrasive free silicon chemical mechanical planarization
JP2013175731A (ja) * 2008-12-11 2013-09-05 Hitachi Chemical Co Ltd Ｃｍｐ用研磨液及びこれを用いた研磨方法
JP2017139350A (ja) * 2016-02-04 2017-08-10 日立化成株式会社 研磨液、研磨液セット、及び、基体の研磨方法
US20190284434A1 (en) * 2018-03-14 2019-09-19 Cabot Microelectronics Corporation Cmp compositions containing polymer complexes and agents for sti applications
US20210017421A1 (en) * 2019-07-16 2021-01-21 Cabot Microelectronics Corporation Method to increase barrier film removal rate in bulk tungsten slurry

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101654001B (zh) * 2008-08-21 2015-05-13 比亚迪股份有限公司 一种金属化膜及其制备方法和含有该金属化膜的线路板
KR102619722B1 (ko) * 2016-10-27 2024-01-02 삼성디스플레이 주식회사 트랜지스터 표시판의 제조 방법 및 이에 이용되는 연마 슬러리

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005518091A (ja) * 2002-02-11 2005-06-16 キャボット マイクロエレクトロニクス コーポレイション Ｃｍｐのための正電荷高分子電解質で処理したアニオン性研磨粒子
JP2013175731A (ja) * 2008-12-11 2013-09-05 Hitachi Chemical Co Ltd Ｃｍｐ用研磨液及びこれを用いた研磨方法
JP2011254067A (ja) * 2010-05-07 2011-12-15 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及びこれを用いた研磨方法
WO2012103091A2 (en) * 2011-01-24 2012-08-02 Clarkson University Abrasive free silicon chemical mechanical planarization
JP2017139350A (ja) * 2016-02-04 2017-08-10 日立化成株式会社 研磨液、研磨液セット、及び、基体の研磨方法
US20190284434A1 (en) * 2018-03-14 2019-09-19 Cabot Microelectronics Corporation Cmp compositions containing polymer complexes and agents for sti applications
US20210017421A1 (en) * 2019-07-16 2021-01-21 Cabot Microelectronics Corporation Method to increase barrier film removal rate in bulk tungsten slurry

Also Published As

Publication number Publication date
WO2021162111A1 (ja) 2021-08-19
KR20220066969A (ko) 2022-05-24
TW202138501A (zh) 2021-10-16
US20230054199A1 (en) 2023-02-23
TWI801810B (zh) 2023-05-11
CN114729258A (zh) 2022-07-08
JP2023164473A (ja) 2023-11-10

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