JPWO2021161438A1 - - Google Patents

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Publication number
JPWO2021161438A1
JPWO2021161438A1 JP2021577779A JP2021577779A JPWO2021161438A1 JP WO2021161438 A1 JPWO2021161438 A1 JP WO2021161438A1 JP 2021577779 A JP2021577779 A JP 2021577779A JP 2021577779 A JP2021577779 A JP 2021577779A JP WO2021161438 A1 JPWO2021161438 A1 JP WO2021161438A1
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JP
Japan
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JP2021577779A
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JP7304978B2 (ja
JPWO2021161438A5 (ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2021577779A 2020-02-13 2020-02-13 半導体レーザ装置 Active JP7304978B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/005479 WO2021161438A1 (ja) 2020-02-13 2020-02-13 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JPWO2021161438A1 true JPWO2021161438A1 (ja) 2021-08-19
JPWO2021161438A5 JPWO2021161438A5 (ja) 2022-07-25
JP7304978B2 JP7304978B2 (ja) 2023-07-07

Family

ID=77291480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021577779A Active JP7304978B2 (ja) 2020-02-13 2020-02-13 半導体レーザ装置

Country Status (5)

Country Link
US (1) US20230075645A1 (ja)
EP (1) EP4106118B1 (ja)
JP (1) JP7304978B2 (ja)
CN (1) CN115088149A (ja)
WO (1) WO2021161438A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023074228A1 (ja) * 2021-10-27 2023-05-04

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000332361A (ja) * 1999-05-21 2000-11-30 Pioneer Electronic Corp 窒化ガリウム系半導体発光素子
WO2004023614A1 (ja) * 2002-09-06 2004-03-18 Mitsubishi Chemical Corporation 半導体発光素子および半導体発光素子モジュール
JP2006032437A (ja) * 2004-07-12 2006-02-02 Sony Corp 半導体レーザおよびこれを用いた光装置
JP2006295016A (ja) * 2005-04-14 2006-10-26 Sanyo Electric Co Ltd 半導体レーザ素子
US20100150196A1 (en) * 2008-12-15 2010-06-17 Jds Uniphase Corporation Laser Diode
JP2014197598A (ja) * 2013-03-29 2014-10-16 三菱電機株式会社 半導体レーザ装置
JP2015023180A (ja) * 2013-07-19 2015-02-02 三菱電機株式会社 半導体レーザ装置
JP2017005102A (ja) * 2015-06-10 2017-01-05 三菱電機株式会社 半導体レーザ装置
JP2017084845A (ja) * 2015-10-22 2017-05-18 三菱電機株式会社 半導体レーザ装置
JP2018046118A (ja) * 2016-09-13 2018-03-22 三菱電機株式会社 ブロードエリア半導体レーザ素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6256330B1 (en) * 1996-12-02 2001-07-03 Lacomb Ronald Bruce Gain and index tailored single mode semiconductor laser
JP2001210910A (ja) * 1999-11-17 2001-08-03 Mitsubishi Electric Corp 半導体レーザ
JP2004103679A (ja) * 2002-09-06 2004-04-02 Mitsubishi Chemicals Corp 半導体発光素子および半導体発光素子モジュール
WO2015092992A1 (ja) * 2013-12-20 2015-06-25 パナソニックＩｐマネジメント株式会社 半導体発光素子
WO2016195701A1 (en) * 2015-06-05 2016-12-08 Iulian Basarab Petrescu-Prahova Emitter semiconductor laser type of device
WO2019053854A1 (ja) * 2017-09-14 2019-03-21 三菱電機株式会社 半導体レーザ装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000332361A (ja) * 1999-05-21 2000-11-30 Pioneer Electronic Corp 窒化ガリウム系半導体発光素子
WO2004023614A1 (ja) * 2002-09-06 2004-03-18 Mitsubishi Chemical Corporation 半導体発光素子および半導体発光素子モジュール
JP2006032437A (ja) * 2004-07-12 2006-02-02 Sony Corp 半導体レーザおよびこれを用いた光装置
JP2006295016A (ja) * 2005-04-14 2006-10-26 Sanyo Electric Co Ltd 半導体レーザ素子
US20100150196A1 (en) * 2008-12-15 2010-06-17 Jds Uniphase Corporation Laser Diode
JP2014197598A (ja) * 2013-03-29 2014-10-16 三菱電機株式会社 半導体レーザ装置
JP2015023180A (ja) * 2013-07-19 2015-02-02 三菱電機株式会社 半導体レーザ装置
JP2017005102A (ja) * 2015-06-10 2017-01-05 三菱電機株式会社 半導体レーザ装置
JP2017084845A (ja) * 2015-10-22 2017-05-18 三菱電機株式会社 半導体レーザ装置
JP2018046118A (ja) * 2016-09-13 2018-03-22 三菱電機株式会社 ブロードエリア半導体レーザ素子

Also Published As

Publication number Publication date
US20230075645A1 (en) 2023-03-09
CN115088149A (zh) 2022-09-20
EP4106118B1 (en) 2024-03-27
EP4106118A1 (en) 2022-12-21
EP4106118A4 (en) 2023-05-10
WO2021161438A1 (ja) 2021-08-19
JP7304978B2 (ja) 2023-07-07

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