JPWO2021157719A1 - - Google Patents
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- Publication number
- JPWO2021157719A1 JPWO2021157719A1 JP2021576195A JP2021576195A JPWO2021157719A1 JP WO2021157719 A1 JPWO2021157719 A1 JP WO2021157719A1 JP 2021576195 A JP2021576195 A JP 2021576195A JP 2021576195 A JP2021576195 A JP 2021576195A JP WO2021157719 A1 JPWO2021157719 A1 JP WO2021157719A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13069—Thin film transistor [TFT]
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- H—ELECTRICITY
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
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- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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JP2020019325 | 2020-02-07 | ||
JP2020019329 | 2020-02-07 | ||
JP2020019327 | 2020-02-07 | ||
PCT/JP2021/004411 WO2021157719A1 (ja) | 2020-02-07 | 2021-02-05 | 半導体素子および半導体装置 |
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CN118743031A (zh) * | 2022-01-31 | 2024-10-01 | 株式会社Flosfia | 层叠结构体、半导体元件和半导体装置 |
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JP4670034B2 (ja) | 2004-03-12 | 2011-04-13 | 学校法人早稲田大学 | 電極を備えたGa2O3系半導体層 |
JP4910889B2 (ja) * | 2007-05-31 | 2012-04-04 | 株式会社デンソー | 半導体装置 |
JP5078039B2 (ja) | 2009-01-19 | 2012-11-21 | 学校法人早稲田大学 | Ga2O3系半導体素子及びGa2O3系半導体素子の製造方法 |
JP5799354B2 (ja) | 2012-08-23 | 2015-10-21 | 学校法人早稲田大学 | Ga2O3系半導体素子 |
TW201438078A (zh) * | 2013-03-18 | 2014-10-01 | Suretech Technology Co Ltd | 晶圓製程的切割方法 |
JP6647521B2 (ja) * | 2014-10-09 | 2020-02-14 | 株式会社Flosfia | 導電性積層構造体の製造方法 |
JP6906217B2 (ja) * | 2015-12-18 | 2021-07-21 | 株式会社Flosfia | 半導体装置 |
US11189737B2 (en) * | 2015-12-25 | 2021-11-30 | Idemitsu Kosan Co., Ltd. | Laminated body |
JP2017118014A (ja) * | 2015-12-25 | 2017-06-29 | 出光興産株式会社 | 積層体、半導体素子及び電気機器 |
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KR20220134639A (ko) | 2022-10-05 |
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